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    TC58DVG02A1TG00

    Abstract: DIN527 TC58DVG02A1
    Text: TC58DVG02A1TG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT 128M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte


    Original     		PDF TC58DVG02A1TG00 TC58DVG02A1 528-byte 528-byte TC58DVG02A1TG00 DIN527