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    Text: TC51WKM616BXGN75 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51WKM616BXGN is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high


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    PDF TC51WKM616BXGN75 304-WORD 16-BIT TC51WKM616BXGN 864-bit P-TFBGA48-0811-0