TC5117445CSJ
Abstract: No abstract text available
Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The
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TC5117445CSJ-40
304-WORD
TC5117445CSJ
28-pin
17445CSJ-40
TC5117445CSJ
SOJ28
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TC5117800bnt-60
Abstract: TC5117800B
Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117800BNJ/BNT-60/70
TC5117800BNT
TC5117800bnt-60
TC5117800B
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TC5117405
Abstract: No abstract text available
Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM328025BS/BS
THM328025BS/BSG
TC5117405BSJ
704mW
THMxxxxxx-60)
074mW
THMxxxxxx-70)
DM32020695
M328025BS/BSG
THM328025BS/BSG-6Q/70
TC5117405
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BC6MA
Abstract: thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70
Text: TOSHIBA THM3640F0BS/BSGW70 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ and 1 pc of TC5117440BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM3640F0BS/BSGW70
THM3640F0BS/BSG
TC5117400BSJ
TC5117440BSJ
198mW
THMxxxxxx-60)
489mW
THMxxxxxx-70)
DM16030894
M3640F0BS/BSG
BC6MA
thm3640f0
thm3640
Toshiba D58
THM3640F0BS/BSG-60A70
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tc5117400f
Abstract: TC5117400J
Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced
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TC5117400J/Z/FT-60/70
TC5117400J/Z/FT-60/70
TC5117400J/Z/FT.
1MX16
tc5117400f
TC5117400J
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Untitled
Abstract: No abstract text available
Text: TOSHIBA *i[H724ô 00 2ÛS17 HIT THM328025BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM328025BS/BSG-60/70
THM328025BS/BSG
TC5117405BSJ
704mW
DM32020695
THM328025BS/BSG
328025BS/BSG
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator
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TC5117800BNJ/BNT-60/70
715mW
TC5117800BNT-60)
605mW
TC5117800BNT-70)
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schottky CST
Abstract: h28p CST50 tc5117800cft
Text: TOSHIBA TC5117800CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5117800CJ/CFT/CST is a fast page dynamic RAM organized as 2,097,152 words by 8 bits. The
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TC5117800CJ/CFT/CST-50
152-WORD
TC5117800CJ/CFT/CST
28-pin
TC51178Q0CJ/CFT/CST
SOJ28
schottky CST
h28p
CST50
tc5117800cft
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TC5118160
Abstract: c51v tc5118180
Text: X6 Capacity Type No. Max. Access Time ns Min. Cyde Power Organization Time(ns) Supply (V) Max. Powat Dis»ip»tk>n(rciW) Active *T C 5 1 16800ANJ/ANT-60 60 15 30 110 523 *T C 5 1 16800ANJ/ANT-70 70 20 35 130 440 *TC5117800ANJ/ANT-60 60 15 30 110 743 2097152
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16800ANJ/ANT-60
16800ANJ/ANT-70
TC5117800ANJ/ANT-60
17800ANJ/ANT-70
TC51V16800AN
J/ANT-70
V17800ANJ/ANT-70
TC5116900AJ/AFT-60
16900AJ/AFT-70
17900AJ/AFT-60
TC5118160
c51v
tc5118180
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TC5117405
Abstract: BST60
Text: TOSHIBA T C 5 1 1 7 4 0 5 B S J / B S T -6 0 / 7 0 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5117405BSJ/BST
TC5117405BSJ/
300mil)
TC5117405BSJ/BST-60/70
DR16070295
TC5117405
BST60
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MM3280
Abstract: 928m
Text: TOSHIBA THM328020S/SG -60/70 8,388,608 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 328020 is a 8,388,608 word by 32 bit dynam ic RAM m odule which is assem bled with 16 TC5117400J devices on the printed circuit board. The TH M 328020 can be used as w ell as 16,777,216 word by
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THM328020S/SG
TC5117400J
xxxxxx-60onditions.
89MAX.
THM3280205
M328020SG
MM3280
928m
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schottky CST
Abstract: tc5117805
Text: TOSHIBA TC5117805CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117805CJ/CFT/CST is an EDO (hyper page) dynamic RAM organized as 2,097,152 words by 8 bits.
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TC5117805CJ/CFT/CST-50
152-WORD
TC5117805CJ/CFT/CST
28-pin
TC5117805CJ/CFT/CST-24
SOJ28
schottky CST
tc5117805
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A249
Abstract: No abstract text available
Text: TOSHIBA TC511780QANJ/ANT-60/70/80 2,097,152 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC5117800A series is the new generation dynamic RAM organized 2,097,152 word by 8 bit. The TC5117800A series utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit
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TC511780QANJ/ANT-60/70/80
TC5117800A
I/01-I/07)
TC5117800AJ/ANJ/AZ/ANZ/AFT/ANT/ATR/
1MX16
A249
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TC5117405
Abstract: No abstract text available
Text: DRAM Module AC Conditions No. 31 TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14
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TC5117405BSJ/BST,
TC5117445BSJ/BST
TC51V17405BST/BST,
TC51V17445BSJ/BST
THMxxxxxx-60
THMxxxxxx-70
TC5117405
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117405BSJ/BST-60/70
TC5117405BSJ/BST
TC5117405BSJ/BST
300mil)
DR16070295
SOJ26-P-300C)
BST60
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Untitled
Abstract: No abstract text available
Text: TOSHIBA •^0^7240 Q O E fiM TO 4Mb THM324005BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM324005BS/BSG is a 4,194,304 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 8 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which
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THM324005BS/BSG60/70
THM324005BS/BSG
TC5117405BSJ
620mW
THMxxxxxx-60)
990mWC
h9200
/09-Dsa/sas00fezei/\iHi
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TÜT724Ö 00 2û 4f l3 20b B THM324000BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM324000BS/BSG is a 4,194,304 words by 32 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ on the printed circuit board. This module can be used as well as 8,388,608 words by 16 bits dynamic RAM module, by means
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THM324000BS/BSG-60/70
THM324000BS/BSG
TC5117400BSJ
OIU31AIV
/09-O
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Untitled
Abstract: No abstract text available
Text: TQR7HMÔ 0 0 2 f l 5 1 D TOSHIBA Db4 THM328020BS/BSG60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM328020BS/BSG is a 8,388,608 words by 32 bits dynamic RAM module which assembled 16 pcs of TC5117400BSJ on the printed circuit board. This module can be used as well as 16,777,216 words by 16 bits dynamic RAM
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THM328020BS/BSG60/70
THM328020BS/BSG
TC5117400BSJ
andDQ31,
cl724fl
DM32010794
THM328020BS/BSG-60/70
THM328020BS/BSG
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ^0^7240 00264=57 T H M ÔTO m - 3 6 4 0 F O B S / B S G - 6 0 / 7 0 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ
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THM3640F0BS/BSG
TC5117400BSJ
TC5117440BSJ
1IV13Q
/09-osa/saodotâ
68oeo9i
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM368020S/SG-60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM368020 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 16 TC5117400J devices and 8 TC514100ASJ devices on the printed circuit board. The THM368020 can be used
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THM368020S/SG-60/70
THM368020
TC5117400J
TC514100ASJ
THM368020S/SG
368020SG
368020S
DD25T51
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Untitled
Abstract: No abstract text available
Text: THM324000S/SG -60/70 4,194,304 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 324000S/SG is a 4,194,304 word by 32 bit dynamic RAM module which is assembled with 8 TC5117400J devices on the printed circuit board. The THM 324000 can be used as well as 8,388,608 word by
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THM324000S/SG
324000S/SG
TC5117400J
08MAX.
TIIM324000S
THM324000SQ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 woid by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced
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OCR Scan
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TC5117400J/Z/FT-60/70
TC5117400J/Z/FT-60/70
TC5117400J/Z/FT.
Q0254fcjfl
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BST60
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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OCR Scan
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TC5117400BSJ/BST-60/70
TC5117400BSJ/BST
300mil)
DR16040794
00E7t
SOJ26-P-300C)
BST60
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TC5117400CSJ
Abstract: tc5117400 5117400CSJ TCS117 TC5117400CST SH4011 IG55
Text: INTEGRATED T O SH IB A T O S H I 6 A M O S D I G I T A L I N T E G R A T E D CIRCU IT CIRCUIT TECHNICAL TC5117400 CSJ 'C S T - 40 TC5117400 CSJ/CST- 50 TC5117400 CSJ / CST - 60 DATA SILICON GATE CM O S TENTATIVE DATA 4,194,304 W O R D x 4 BIT FAST PAGE D Y N A M IC RAM
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TC5117400
TC5117400CSJ/CST
300mil)
TC5117400CSJ/CST--
TC5117400CSJ
5117400CSJ
TCS117
TC5117400CST
SH4011
IG55
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