TC3141
Abstract: GRM39C0G102J50V GRM39Y5V104Z25V
Text: TC3141 REV3_20040412 2.4 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT • P-1 dB: 33 dBm Vg GND RF OUT • Small Signal Gain: 29 dB RF IN • Power Added Efficiency: 31 % RF IN RF OUT • IP3: 42 dBm GND Vd • DC Bias: 800 mA @ 7 V DESCRIPTION The TC3141 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume
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TC3141
TC3141
GRM39C0G3R3C50V
GRM39C0G2R5C50V
GRM39C0G010C50V
GRM39C0GR75C50V
GRM39C0G1R5C50V
GRM39C0G102J50V
GRM39Y5V104Z25V
GRM39C0G102J50V
GRM39Y5V104Z25V
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TC3141
Abstract: GRM39C0G102J50V GRM39Y5V104Z25V GRM39C0G010C50 GRM39C0G1R5C
Text: TC3143 REV0_20040402 2.1 - 2.2 GHz 2W MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 29 dB ! Power Added Efficiency: 31 % ! IP3: 42 dBm ! DC Bias: 800 mA @ 7 V DESCRIPTION The TC3143 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume
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TC3143
TC3143
TC3141
GRM39C0G102J50V
GRM39Y5V104Z25V
GRM39C0G010C50
GRM39C0G1R5C
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TC1076
Abstract: TC3532 TC1950 tc3141 TC1900 TC3331 tc1953a TC4522 TC4531 TC1037
Text: 6/26/2008 MMICs Product Selection Guide Product No. Freq. GHz G.O.F. (+/-dB) Gain (dB) Pout (dBm) 41.5 0.5 0.6 22 19 16 8.5 11.5 P-1dB (dBm) P-2dB (dBm) P-3dB (dBm) TC1037 TC1073 TC1076 TC1900 TC1901 3.1~3.5 9.2~10.2 9.2~10.2 0.00003~12 2~20 TC1902 6~18
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TC1037
TC1073
TC1076
TC1900
TC1901
TC1902
TC1954
TC1956
TC1985
TC4820
TC1076
TC3532
TC1950
tc3141
TC1900
TC3331
tc1953a
TC4522
TC4531
TC1037
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TDA 7240 equivalent
Abstract: TDA 7240 pin diagram
Text: ^^PÌ|^^§ÌPS!H1Ì!|Ì|PIPS§I§|ÌSÌS TOSHIBA % L O G I C / M E M O R Y ^7240 0Q2QÔÛ4 S * T 0 S 2 8 4,194,304 WORD x 1 BIT fiYNAMIC RAM * This is advanced information and specifications are subject to change without notice. 7 " ^ ¿ - “2 3 - / S ’"
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TC514100J/Z
TC514100J/Z-80
TC5141OOJ/Zâ
T-46-23-15
TDA 7240 equivalent
TDA 7240 pin diagram
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AZL-70
Abstract: TC514100APL TC514100 tc3141
Text: 4,194,304 WORD x 1 BIT DYNAMIC RAM PRELIMINARY D E S C R IP T IO N T he TC514100APL/AJL/ASJL/AZL is th e new generation dynam ic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA'S CMOS Silicon g ate process technology as
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TC514100APL/AJL/ASJL/AZL
300/350mil)
TC514100APL/AJL/ASJL/AZL.
a512K
TC5141
L/AZL-70,
AZL-70
TC514100APL
TC514100
tc3141
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Untitled
Abstract: No abstract text available
Text: 4,1 94 ,3 0 4 W O R D x PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as
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TC514100APL/AJL/ASJL/AZL
300/350mil)
TC514I00APL/AJL/ASJL/AZL.
a512K
TC5141
TC514100
TC5141OOAPL/AJ
L/AZL-10
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