Untitled
Abstract: No abstract text available
Text: SOA AND LOAD LINES APPLICATION NOTE 22 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX 1.0 MEANING OF SOA GRAPH (800) 546-2739 +50 SOA (Safe-Operating-Area) graphs define the acceptable limits of stresses to which power op amps can be subjected. Figure 1 depicts
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546-APEX
AN22U
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mosfet SOA testing
Abstract: AD534 PA04 PA05 PA12 PA85 soa tester
Text: SOA AND LOAD LINES APPLICATION NOTE 22 POWER OPERATIONAL AMPLIFIER HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX 1.0 MEANING OF SOA GRAPH +50 SOA (Safe-Operating-Area) graphs define the acceptable limits of stresses to which power op amps can be subjected. Figure 1 depicts
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546-APEX
AN22U
mosfet SOA testing
AD534
PA04
PA05
PA12
PA85
soa tester
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Untitled
Abstract: No abstract text available
Text: L 10 auct i, One. C^ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE13009 SWITCHMODE Series NPN Silicon Power Transistors Features • VCEO(S11S) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ Tc = 100°C
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MJE13009
O-220AB
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Untitled
Abstract: No abstract text available
Text: Teccor brand Thyristors 12 Amp Alternistor High Communitation Triac for LED dimmer Application Q6012LH1LED Series RoHS ® Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac
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Q6012LH1LED
Q6008LH1LED
O-220AB
O-220L
Q6012LH1LED
Q6012LH1
Q6012LH1LEDTP
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S8016N
Abstract: S2055N S4016N s8025 35 amp scr s60 S4025 S2055N equivalent S1025N S2016N S2025N
Text: D 2 Pak MT2 MT1 G 2 D Pak SCR 16 – 55 Amps 6 General Description The Teccor Electronics line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccor's line of sensitive SCRs. Teccor offers devices with
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teccor triac application notes
Abstract: Q6012LH1 Q6012 alternistors Alternistor motor speed M1056 ac motor control with triac Q6012lh1led Triac Heat Sink assembly
Text: Teccor brand Thyristors 12 Amp Alternistor High Communitation Triac for LED dimmer Application Q6012LH1LED Series RoHS Description Q6012LH1LED series is designed to meet low load current characteristics typical in LED lighting applications. By keeping holding current at 8mA maximum, this Triac
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Q6012LH1LED
Q6008LH1LED
O-220AB
Q6012LH1LEDTP
Q6012LH1
O-220
teccor triac application notes
Q6012
alternistors
Alternistor motor speed
M1056
ac motor control with triac
Triac Heat Sink assembly
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S1055M
Abstract: SCR S1055m S0565J S6025L s6015l S2055 s1065k S101E S6010L S1035K
Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more
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O-218AC
O-202AB
O-218X
O-220AB
S1055M
SCR S1055m
S0565J
S6025L
s6015l
S2055
s1065k
S101E
S6010L
S1035K
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S6025
Abstract: S1055M S8025 S4008 S0525 S4025 SCR S1055m S8055R S1070W S6020
Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-92 TO-218AC TO-202AB TO-218X A THERMOTAB TO-220AB K G SCRs 1 – 70 Amps 6 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more
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O-218AC
O-202AB
O-218X
O-220AB
tec20
S6025
S1055M
S8025
S4008
S0525
S4025
SCR S1055m
S8055R
S1070W
S6020
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Q7004L4
Abstract: Q2004L3 Q4015L5 Q7006L5 Q7010L5 Q4004L3 applications Q4004L3 Q5010L5 Q5025R5 q6004l3
Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U THERMOTAB TO-220AB TO - 92 MT2 TO-202AB MT1 G Triacs 0.8 – 25 Amps 2 General Description Variations of devices covered in this data sheet are available for custom design applications. Please consult factory for more
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O-220AB
O-202AB
temperatureTO-220
O-220
Q7004L4
Q2004L3
Q4015L5
Q7006L5
Q7010L5
Q4004L3 applications
Q4004L3
Q5010L5
Q5025R5
q6004l3
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mje13003 equivalent
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
mje13003 equivalent
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
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2N2222 transistor output curve
Abstract: UTCMJE13003 MJE13003 transistor
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
2N2222 transistor output curve
UTCMJE13003
MJE13003 transistor
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mje13003
Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-126
QW-R204-004
mje13003
2n2222 npn switching transistor
mje13003 equivalent
UTCMJE13003
2N2222 NPN Transistor features
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
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equivalent transistor 2N2905
Abstract: UTCMJE13003 MJE13003 TO-92 mje13003 equivalent tti relay Ferroxcube core
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
QW-R201-062
equivalent transistor 2N2905
UTCMJE13003
MJE13003 TO-92
mje13003 equivalent
tti relay
Ferroxcube core
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Untitled
Abstract: No abstract text available
Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V
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MJE13003
O-220
QW-R203-017
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Q6040P
Abstract: Q8025L6 Q4025J6 q8012LH5 alternistor Q4025L6 Q4025P Q6025 Q8040J7 Q2015L6
Text: * es D ag ZE k I c Pa GN 9 d O te 63 c le EC E71 e S .R e# .L Fil U TO-220AB THERMOTAB TO-218AC FASTPAK MT2 TO-218X MT1 G Alternistor Triacs 6 – 40 Amps 4 General Description handling capability. The TO-218X features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated
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O-220AB
O-218AC
O-218X
O-218X
2500VRMS.
Q6040P
Q8025L6
Q4025J6
q8012LH5
alternistor
Q4025L6
Q4025P
Q6025
Q8040J7
Q2015L6
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MT2 Q4025P
Abstract: Triac MT2 Q6025P Q5016RH4 Q8040P 20 amp 800 volt triac 6 amp 600 volt triac 4 amp 250 volt triac q8016rh4 q8025l6 Gate Turn-off Thyristor
Text: Thyristor Product Catalog L. U. D ZE NI 4 G 39 CO 716 E R #E d te ec l Se P * es ag k ac le Fi TO-220AB THERMOTAB TO-218AC TO-218X MT2 FASTPAK MT1 G Alternistor Triacs 6 – 40 Amps 4 General Description Teccor offers bidirectional alternistors with current ratings from
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O-220AB
O-218AC
O-218X
O-220
MT2 Q4025P
Triac MT2 Q6025P
Q5016RH4
Q8040P
20 amp 800 volt triac
6 amp 600 volt triac
4 amp 250 volt triac
q8016rh4
q8025l6
Gate Turn-off Thyristor
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Untitled
Abstract: No abstract text available
Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER RANSISTORS The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching
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MJE13002
O-126
QW-R204-014
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mje13009 equivalent
Abstract: 2N2222 transistor output curve 2N2222 transistor to drive a relay on semiconductor AN719
Text: ON Semiconductor SWITCHMODEt Series NPN Silicon Power Transistors The MJE13009 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications
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MJE13009
MJE13009
AN-222:
mje13009 equivalent
2N2222 transistor output curve
2N2222 transistor to drive a relay
on semiconductor AN719
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e13009
Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
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MJE13005*
e13009
E13009 TRANSISTOR equivalent
4000w audio amplifier
JE-I3009
4000w inverter circuit
4000w power amplifier
equivalent of transistor mje13007
mje13009 equivalent
125VDC to 24 VDC regulator circuit
Motorola Bipolar Power Transistor Data
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JE1300
Abstract: JE13005 mje130
Text: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA M JE13005* D esigner’s Data Sheet ‘ M otorola Preferred Device S W IT C H M O D E S e rie s N PN S ilic o n P o w e r T ra n s is to rs These de vices are de sig ne d fo r h ig h -v o lta g e , h ig h -s p e e d pow er sw itching
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MJE13005/D
JE13005*
21A-06
O-220AB
JE1300
JE13005
mje130
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MJ10007
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS
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MJ10007'
MJ10007
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