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    TC 4011 B Search Results

    TC 4011 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4011BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    8A34011B-000AJG8 Renesas Electronics Corporation Line Card Synchronizer for IEEE 1588 - Eight Channels Visit Renesas Electronics Corporation
    ZSPM4011BA1W33 Renesas Electronics Corporation High Efficiency 1A Synchronous Buck Converter Visit Renesas Electronics Corporation
    ZSPM4011BA1W15 Renesas Electronics Corporation High Efficiency 1A Synchronous Buck Converter Visit Renesas Electronics Corporation
    ZSPM4011BA1W18 Renesas Electronics Corporation High Efficiency 1A Synchronous Buck Converter Visit Renesas Electronics Corporation
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    TC 4011 B Price and Stock

    Analog Devices Inc LTC4011CFE#PBF

    Battery Management Hi Eff St&alone Nickel Bat Chr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LTC4011CFE#PBF 9,121
    • 1 $14.23
    • 10 $10.17
    • 100 $7.95
    • 1000 $7.04
    • 10000 $6.93
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    Analog Devices Inc LTC4011CFE#TRPBF

    Battery Management Hi Eff St&alone Nickel Bat Chr
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LTC4011CFE#TRPBF 4,711
    • 1 $10.75
    • 10 $8.39
    • 100 $7.12
    • 1000 $6.94
    • 10000 $6.93
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    Micron Technology Inc MT46H32M16LFBF-5 IT:C

    DRAM MOBILE DDR 512M 32MX16 FBGA IT T67M
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    Mouser Electronics MT46H32M16LFBF-5 IT:C 2,493
    • 1 $5.8
    • 10 $4.63
    • 100 $4.31
    • 1000 $4.24
    • 10000 $3.93
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    Micron Technology Inc MT46H32M16LFBF-5 IT:C TR

    DRAM MOBILE DDR 512M 32MX16 FBGA
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    Mouser Electronics MT46H32M16LFBF-5 IT:C TR 1,416
    • 1 $4.99
    • 10 $4.38
    • 100 $4.38
    • 1000 $4.03
    • 10000 $3.84
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    Micron Technology Inc MT46H16M32LFB5-5 IT:C

    DRAM MOBILE DDR 512M 16MX32 FBGA IT T67M
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    Mouser Electronics MT46H16M32LFB5-5 IT:C 212
    • 1 $5.43
    • 10 $4.64
    • 100 $4.29
    • 1000 $3.98
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    Find more TC 4011 B price and stock on Findchips.com

    TC 4011 B Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC4011BF Toshiba Japanese - General Purpose Logic ICs Original PDF
    TC4011BF Toshiba General Purpose Logic ICs Original PDF
    TC4011BF Toshiba C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Scan PDF
    TC4011BF Toshiba Quad 2 Input NAND Gate Scan PDF
    TC4011BF Toshiba IC NAND GATE QUAD 2IN CMOS 14SOP Scan PDF
    TC4011BF Toshiba NAND GATE Scan PDF
    TC4011BF Toshiba QUAD 2 INPUT NAND GATE Scan PDF
    TC4011BF Toshiba 2-Input NAND-Function Logic Gate Scan PDF
    TC4011BF(F) Toshiba IC NAND GATE QUAD 2IN CMOS 14SOP Original PDF
    TC4011BF(N) Toshiba IC NAND GATE QUAD 2IN CMOS 14SOP T/R Scan PDF
    TC4011BFN Toshiba Quad 2 Input NAND Gate Scan PDF
    TC4011BFN Toshiba IC NAND GATE QUAD 2IN CMOS 14SOL Scan PDF
    TC4011BFN Toshiba QUAD 2 INPUT NAND GATE Scan PDF
    TC4011BFN Toshiba 2-Input NAND-Function Logic Gate Scan PDF
    TC4011BFN-ELP Toshiba IC NAND GATE QUAD 2IN CMOS 14SOP T/R Scan PDF
    TC4011BFN(N:M) Toshiba IC NAND GATE QUAD 2IN CMOS 14SOL T/R Original PDF
    TC4011BFT Toshiba Japanese - General Purpose Logic ICs Original PDF
    TC4011BFT Toshiba General Purpose Logic ICs Original PDF
    TC4011BFT Toshiba IC NAND GATE QUAD 2IN CMOS 14TSSOP Scan PDF
    TC4011BFT Toshiba Quad 2 Input NAND Gate Scan PDF

    TC 4011 B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. INCH-POUND MIL-PRF-19500/682B 1 March 2013 SUPERSEDING MIL-PRF-19500/682A 16 March 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY


    Original     		MIL-PRF-19500/682B MIL-PRF-19500/682A 1N6845U3, MIL-PRF-19500. PDF

    1N3291

    Abstract: No abstract text available
    Text: INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/246K 20 July 2012 SUPERSEDING MIL-PRF-19500/246J w/AMENDMENT 1 8 March 2012 PERFORMANCE SPECIFICATION SHEET


    Original     		MIL-PRF-19500/246K MIL-PRF-19500/246J 1N3289, 1N3291, 1N3293, 1N3294, 1N3295, MIL-PRF-19500. 1N3291 PDF

    1N6910

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 January 2012. INCH-POUND MIL-PRF-19500/723C 12 October 2011 SUPERSEDING MIL-PRF-19500/723B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,


    Original     		MIL-PRF-19500/723C MIL-PRF-19500/723B 1N6910UTK2, 1N6911UTK2, 1N6912UTK2, 1N6910UTK2CS, 1N6911UTK2CS, 1N6912UTK2CS, 1N6910UTK2AS, 1N6911UTK2AS, 1N6910 PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2013. INCH-POUND MIL-PRF-19500/678B 22 February 2013 SUPERSEDING MIL-PRF-19500/678A 14 June 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP


    Original     		MIL-PRF-19500/678B MIL-PRF-19500/678A 1N6840U3 1N6841U3, MIL-PRF-19500. PDF

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. MIL-PRF-19500/647E 21 June 2013 SUPERSEDING MIL-PRF-19500/647D 5 November 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original     		MIL-PRF-19500/647E MIL-PRF-19500/647D 1N6778 1N6779, MIL-PRF-19500. PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 February 2012. INCH-POUND MIL-PRF-19500/726C 14 November 2011 SUPERSEDING MIL-PRF-19500/726B 28 February 2011 PERFORMANCE SPECIFICATION SHEET


    Original     		MIL-PRF-19500/726C MIL-PRF-19500/726B 1N6940UTK3, 1N6941UTK3, 1N6942UTK3, 1N6940UTK3CS, 1N6941UTK3CS, 1N6942UTK3CS, 1N6940UTK3AS, 1N6941UTK3AS, PDF

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2014. MIL-PRF-19500/645D 31 October 2013 SUPERSEDING MIL-PRF-19500/645C 24 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original     		MIL-PRF-19500/645D MIL-PRF-19500/645C 1N6772, 1N6773, 1N6772R 1N6773R MIL-PRF-19500. PDF

    1N6664 R

    Abstract: No abstract text available
    Text: * METRIC The documentation and process conversion measures necessary to comply shall with this document shall be completed by 3 March 2011. * MIL-PRF-19500/594B 3 December 2010 SUPERSEDING MIL-PRF-19500/594A 3 July 1998 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original     		MIL-PRF-19500/594B MIL-PRF-19500/594A 1N6664 1N6666, 1N6664R 1N6666R, MIL-PRF-19500. 1N6664 R PDF

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 January 2013. MIL-PRF-19500/680A 17 October 2012 MIL-PRF-19500/680 7 September 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP


    Original     		MIL-PRF-19500/680A MIL-PRF-19500/680 1N6842U3, MIL-PRF-19500. PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by13 December 2013. INCH-POUND MIL-PRF-19500/679C 13 September 2013 SUPERSEDING MIL-PRF-19500/679B 12 December 2007 PERFORMANCE SPECIFICATION SHEET


    Original     		MIL-PRF-19500/679C MIL-PRF-19500/679B 1N6844U3, MIL-PRF-19500. PDF

    Q1/HCPL3000/3100/3101

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 December 2013. INCH-POUND MIL-PRF-19500/681C 25 September 2013 SUPERSEDING MIL-PRF-19500/681B 5 December 2007 PERFORMANCE SPECIFICATION SHEET


    Original     		MIL-PRF-19500/681C MIL-PRF-19500/681B 1N6843CCU3, MIL-PRF-19500. Q1/HCPL3000/3100/3101 PDF

    vqe 24 d

    Abstract: VQE 24 vqe 24 e JANTXV 1N1186 datasheet VQE 13 diode 1N3766R VQE 12 we vqe 24 d datasheet cd 4011 free 1N1188
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999. INCH-POUND MIL-PRF-19500/297C 4 August 1999 SUPERSEDING MIL-S-19500/297B 30 Mar 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original     		MIL-PRF-19500/297C MIL-S-19500/297B 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, vqe 24 d VQE 24 vqe 24 e JANTXV 1N1186 datasheet VQE 13 diode 1N3766R VQE 12 we vqe 24 d datasheet cd 4011 free 1N1188 PDF

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 October 2012. MIL-PRF-19500/211D 20 July 2012 SUPERSEDING MIL-PRF-19500/211C 10 December 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


    Original     		MIL-PRF-19500/211D MIL-PRF-19500/211C 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1N3175, 1N3176, 1N3177, PDF

    shd225405

    Abstract: diode 250V 250mA
    Text: SENSITRON SEMICONDUCTOR SHD225405 TECHNICAL DATA DATA SHEET 4011, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		SHD225405 10Vsales O-254 shd225405 diode 250V 250mA PDF

    pinout of IC 4011

    Abstract: 4011 IC data sheet mc 4011 IC 4011 4011 pinout DATA SHEET IC 4011 SHD225405
    Text: SENSITRON SEMICONDUCTOR SHD225405 TECHNICAL DATA DATA SHEET 4011, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.85, Ohm, 5.5Amp MOSFET œ Isolated œ Hermetically Sealed MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		SHD225405 250mA pinout of IC 4011 4011 IC data sheet mc 4011 IC 4011 4011 pinout DATA SHEET IC 4011 SHD225405 PDF

    HC 4011

    Abstract: 1N5814 4011 1N5812 1N5812HCE 1N5812KCE 1N5814HCE 1N5814KCE 1N5816 1N5816HCE
    Text: Class HC and Class KC Equivalents \l5812—16 Ultrafast Rectifier Die -O h .133 SQ. U ltra fa s t Recovery R ectifier Glass passivated .009 MIN. .010 MAX. 20A Average, up to 150V Solderable silver both sides Available with Al top a n d /o r gold back — c o n ta c t fa c to ry


    OCR Scan     		\l5812â 1N5812HCE 1N5812KCE 1N5814HCE 1N5814KCE 1N5816HCE 1N5816KCE 10Apk 100ua HC 4011 1N5814 4011 1N5812 1N5816 PDF

    HC 4011

    Abstract: 1N5814HCE DC-4011 1N5812 1N5812HCE 1N5812KCE 1N5814 1N5814KCE 1N5816 1N5816HCE
    Text: Class HC and Class K C Equivalents 1N5812—16 Ultrafas t Rectifier Die -Ob .133 SQ. U ltra fa s t Recovery R ectifier Glass passivated .009 MIN. .010 MAX. 20A Average, up to 150V Solderable silver both sides Available with Al top a n d /o r gold back — c o n ta c t fa c to ry


    OCR Scan     		N5812â 1N5812HCE 1N5812KCE 1N5814HCE 1N5814KCE 1N5816HCE 1N5816KCE 10Apk 100ua HC 4011 DC-4011 1N5812 1N5814 1N5816 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANHC and JANKC Equivalents \l6392 Schottky Rectifier Die -O h .215 SQ. -12 MILS MIN. 13 MILS MAX. • S c h o ttk y B arrier R ectifier • Guard Ring P ro te cte d • 60A Average, 45V • Solderable silver both sides • Available with Al to p a n d /o r


    OCR Scan     		\l6392 120Apk 60Apk 10Apk PDF

    U1 4011

    Abstract: 1N6304 1N6304HCE 1N6304KCE 1N6305 1N6305HCE 1N6305KCE 1N6306 1N6306HCE 1N6306KCE
    Text: Cla: ss HC and Class KC Equivale nts 1 J63CMk 0 6 U1:rafast Recti' :ier Die x -b h .215 SQ. Ultrafast Recovery Rectifier Glass passivated .009 MIN. .010 MAX. 70A Average, up to 150V Solderable silver both sides Available with Al top and/or gold back — contact factory


    OCR Scan     		N6304 1N6304HCE 1N6304KCE 1N6305HCE 1N6305KCE 1N6306HCE 1N6306KCE 150Apk 70Apk 1N6304 U1 4011 1N6304 1N6305 1N6306 1N6306KCE PDF

    cd 4011 be

    Abstract: l6391
    Text: JANHC and JANKC iquival ents 1 S cho tt ky ^ e c t ’fier Die N6391 —W.180 SQ. - — —— 12 MILS MIN. 13 MILS MAX. • S c h o ttk y B arrier R ectifier • Guard Ring P ro te cte d • 25A Average, 45V • Solderable silver both sides • Available with Al to p a n d /o r


    OCR Scan     		\l6391 260juH, 50Apk cd 4011 be l6391 PDF

    VEB mikroelektronik

    Abstract: 4011 BP TOSHIBA V40511D Mikroelektronik Information Applikation mikroelektronik Heft 12 mikroelektronik Heft SCL4001BE information applikation mikroelektronik SCL4030BE SCL4011BE
    Text: ö=ü ] k :n ^ G le l- c t 3 n o n il- c Integrierte Schaltkreise Funktion und Einsatzmöglichkeiten CMOS-Logikschaltkreise V 4001 D, V 4011 D, V 4012 D, V 4023 D und V 4030 D CM OS - Logikbaureihe V 4 0 0 0 D Heft 2 Funktion und Einsatzm öglichkeiten der


    OCR Scan     		V4001 Kennw01 VEB mikroelektronik 4011 BP TOSHIBA V40511D Mikroelektronik Information Applikation mikroelektronik Heft 12 mikroelektronik Heft SCL4001BE information applikation mikroelektronik SCL4030BE SCL4011BE PDF

    1N6304

    Abstract: 1N6304HCE 1N6304KCE 1N6305 1N6305HCE 1N6305KCE 1N6306 1N6306HCE 1N6306KCE 1N6304-06
    Text: Class HC and Class KC Equivalents 1 N 6 3 0 4 - 0 6 Ultrafast Rectifier Die • U ltra fa s t Recovery R ectifier • Glass passivated -D > b .215 SQ. .009 MIN. .010 MAX. • 70A Average, up to 150V • Solderable silver both sides • Available with Al top a n d /o r


    OCR Scan     		1N6304-06 1N6304HCE 1N6304KCE 1N6305HCE 1N6305KCE 1N6306HCE 1N6306KCE 70Apk 150Apk 1N6304 1N6305 1N6306 1N6306KCE PDF

    mc 4011

    Abstract: MIL-S-19500 1N6304 1N6305 1N6306 DO-203AB
    Text: The documentation and process conversion measures necessary to comply with this revision shall be cotrpleted by 30 September 1994 INCH-POUND MIL-S-19500/550A 30 June 1994 SUPERSEDING MIL-S-19500/550 USAF 21 Dec enter 1981 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DI00E, SILICON, FAST-RECOVERY, HIGH CURRENT


    OCR Scan     		MIL-S-19500/550A MIL-S-19500/550 DI00E, 1N6304, 1N6305, 1N6306, JANHCA1N6304) 1N6304 JANHCA1N6304 JANKCA1N6304 mc 4011 MIL-S-19500 1N6305 1N6306 DO-203AB PDF

    190-32 UNF-2a

    Abstract: 1N5812 diode 1N5812 1N5814 1N5816 1N5816 diode 478D
    Text: MIL SPECS 44E » • DDQQ12S DG34E74 SST ■ M I L S j INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 February 1994 MIL-S-19500/478E 25 October 1993 SUPERSEDING MIL-S-19500/478D


    OCR Scan     		DQQQ12S DG34g7M MIL-S-19500/478E MIL-S-19500/478D 1N5812, 1N5814, 1N5816, JANCA1N5812) 1N5812 A1N5812 190-32 UNF-2a 1N5812 diode 1N5814 1N5816 1N5816 diode 478D PDF