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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TB3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB3N100E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB3N100E/D MTB3N100E MTB3N100E/D

    0E-01

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S h ee t TB3N100E TM O S E -FE T ™ High E nergy P o w er FET D2PAK for S u rfa c e M ount M otorola Preferred Device TM O S PO W ER FET 3.0 A M P E R E S 1000 VO LTS N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB3N100E 0E-01

    MSC1621

    Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
    Text: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the


    OCR Scan     		PDF 5SMC15AT3 5SMC16AT3 5SMC18AT3 5SMC20AT3 5SMC22AT3 5SMC24AT3 5SMC27AT3 5SMC30AT3 5SMC33AT3 5SMC36AT3 MSC1621 Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931