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    TAV 541 Search Results

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    TAV 541 Price and Stock

    Mini-Circuits TAV-541+

    RF MOSFET E-PHEMT 3V FG873
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TAV-541+ Cut Tape 222 1
    • 1 $2.33
    • 10 $2.218
    • 100 $2.064
    • 1000 $1.968
    • 10000 $1.968
    		Buy Now
    TAV-541+ Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85
    • 10000 $1.85
    		Buy Now
    TAV-541+ Digi-Reel 1
    • 1 $2.33
    • 10 $2.218
    • 100 $2.064
    • 1000 $1.968
    • 10000 $1.968
    		Buy Now
    Mouser Electronics TAV-541+ 2,181
    • 1 $1.85
    • 10 $1.85
    • 100 $1.85
    • 1000 $1.66
    • 10000 $1.62
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    Quest Components TAV-541+ 30
    • 1 $6.3
    • 10 $3.15
    • 100 $3.15
    • 1000 $3.15
    • 10000 $3.15
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    Mini-Circuits TAV1-541NM+

    RF MOSFET Transistors SMT Low Noise Amplifier, 45 MHz - 6 GHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TAV1-541NM+ 476
    • 1 $2.5
    • 10 $2.5
    • 100 $2.44
    • 1000 $2.02
    • 10000 $1.99
    		Buy Now

    Mini-Circuits TAV1-541+

    RF MOSFET Transistors MMIC AMPLIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TAV1-541+ 30
    • 1 $1.99
    • 10 $1.99
    • 100 $1.94
    • 1000 $1.63
    • 10000 $1.61
    		Buy Now

    TAV 541 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TAV-541+ Mini-Circuits RF MOSFET E-PHEMT 3V FG873 Original PDF

    TAV 541 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAV-541

    Abstract: SAV-551 TAV-541 tav 541 SAV-581 US marking TAV-581 TAV-551
    Text: PRODUCT CHANGE NOTICE PCN Form D4-E000-73 PCN#09-020 NOTIFICATION DATE: November 11, 2009 MODEL(S) AFFECTED: SAV-541+, SAV-551+, SAV-581+, TAV-541+, TAV-551+, TAV-581+ EXTENT OF CHANGE: Change of device marking EFFECT OF CHANGE: Model SAV-541+ SAV-551+ SAV-581+


    Original     		PDF D4-E000-73) SAV-541+ SAV-551+ SAV-581+ TAV-541+ TAV-551+ TAV-581+ SAV-541 SAV-551 TAV-541 tav 541 SAV-581 US marking TAV-581 TAV-551

    TAV-541

    Abstract: No abstract text available
    Text: E-PHEMT TAV-541+ Typical Performance Data IDS mA VDS (V) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90


    Original     		PDF TAV-541+ TAV-541

    TAV-541

    Abstract: tav 541
    Text: E-PHEMT TAV-541+ Typical Performance Curves I-V VGS=0.1V PER STEP (2) NOISE FIGURE vs IDS @ 2 GHz (1) 120 0.8 VDS=3V 0.2V 0.7 0.3V IDS (mA) 80 0.4V 60 0.5V 40 NOISE FIGURE (dB) 100 0.6V 20 VDS=4V 0.6 0.5 0.4 0.3 0.2 0.7V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5


    Original     		PDF TAV-541+ TAV-541 tav 541

    CF50A

    Abstract: CF300 MIL-R-11 100S 200S CFF RESISTORS
    Text: CARBON FILM RESISTORS, 1/8 to 3 WATT RESISTORS MCAPS & COILS MDELAY LINES +.5-41-5 H Industry’s lowest cost and widest selection! H Delivery from stock in bulk or tape/reel H Excellent long-term stability, exceeds MIL-R-11 H Mini 1/4W, 1/2W, 1W models H Standard tolerance: ±5% up to 10M ±2%, ±10% avail.


    Original     		PDF MIL-R-11 CF50S FA004B CF50A CF300 MIL-R-11 100S 200S CFF RESISTORS

    MC68360

    Abstract: arbiter master C6000 SN74CBTD16211 TMS320C6000 TMS320C6202
    Text: Application Report SPRA535 TMS320C6000 Expansion Bus to MC68360 Microprocessor Interface Zoran Nikolic DSP Applications Abstract This application report describes how to interface the Motorola MC68360 quad integrated communications controller QUICC to the expansion bus of the Texas Instruments (TI )


    Original     		PDF SPRA535 TMS320C6000 MC68360 MC68360 arbiter master C6000 SN74CBTD16211 TMS320C6202

    pd25a

    Abstract: FDMS8460
    Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description „ Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has


    Original     		PDF FDMS8460 FDMS8460 pd25a

    Untitled

    Abstract: No abstract text available
    Text: FDMS8460 tm Trench N-Channel Power MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has


    Original     		PDF FDMS8460

    FDS8638

    Abstract: ANS13 5680 so8
    Text: FDS8638 N-Channel PowerTrench MOSFET 40 V, 18 A, 4.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS8638 FDS8638 ANS13 5680 so8

    217a marking

    Abstract: No abstract text available
    Text: FDMS8460 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS8460 FDMS8460 217a marking

    Untitled

    Abstract: No abstract text available
    Text: FDMS8333 N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS8333

    Untitled

    Abstract: No abstract text available
    Text: FDS8638 N-Channel PowerTrench MOSFET 40 V, 18 A, 4.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDS8638 FDS8638

    Untitled

    Abstract: No abstract text available
    Text: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDMS86255

    FDMS8460

    Abstract: No abstract text available
    Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has


    Original     		PDF FDMS8460 FDMS8460

    Untitled

    Abstract: No abstract text available
    Text: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 12.4 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDMS86255

    MO-240

    Abstract: MO-240 aa
    Text: FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86152 FDMS86152 MO-240 MO-240 aa

    Untitled

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


    Original     		PDF CSD17559Q5 SLPS374

    Untitled

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


    Original     		PDF CSD17559Q5 SLPS374

    90G001

    Abstract: omap 4460
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


    Original     		PDF CSD17559Q5 SLPS374 CSD17559Q5 13-Inch 90G001 omap 4460

    CSD17559Q5

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


    Original     		PDF CSD17559Q5 SLPS374 CSD17559Q5

    Untitled

    Abstract: No abstract text available
    Text: CSD17559Q5 www.ti.com SLPS374 – NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples: CSD17559Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd


    Original     		PDF CSD17559Q5 SLPS374

    Untitled

    Abstract: No abstract text available
    Text: FIFO RADI Controllei t - ^ ‘läl 5 7 /6 7 4 2 1 9 002901 w Ordering Information Features/ Benefits • High-speed, no fall-through time PACKAGE PART NUMBER PINS TYPE • Control signals for data latching 574219 40 J Mil • Full, Half-Full, Empty, Almost flags for


    OCR Scan     		PDF FIFOs--16-bit

    27c301

    Abstract: 27C101 nec 27c1000 S631000 S631001 INTEL 27C101 intel 27010 eprom
    Text: HDSSTlb 0013217 3 40E D GOULD INC/ GOULD A M I •> GOULD Aftll* ¡AHI 1MBit 131,072 x 8 Static CMOS Mask ROM Semiconductors S631000/S631001 Features General Description • Fast Access Time: S631000-10/S631001-10—100ns S631000-15/S631001-15—150ns S631000-20/S631001-20—200ns


    OCR Scan     		PDF S631000/S631001 S631000-10/S631001-10--100ns S631000-15/S631001-15--150ns S631000-20/S631001-20--200ns 125mW 625jjW dip--S631001 available--S631001 S631000 0D1322S 27c301 27C101 nec 27c1000 S631001 INTEL 27C101 intel 27010 eprom

    T130

    Abstract: GDGD700 T130N 5x931 heatsink tv 35 5X93
    Text: ELIPEC S2E T 130 N D 34035^7 Typenreihe/Type range T 130 N Elektrische Eigenschaften Electrical properties 400* 600 Höchstzulässige Werte Maximum permissible values V dRM. Vrrm Periodische Vorwärts- und repetitive peak forward off-state 800 Rückwärts-Spitzensperrspannung


    OCR Scan     		PDF 34G35T7 GDGD700 T130 T130N 5x931 heatsink tv 35 5X93

    Untitled

    Abstract: No abstract text available
    Text: ELIPEC T 130 N S2E D 3 4 0 3 5 ^ 7 G D G D 7 0 0 TTb * U P E C Typenreihe/Type range T 130 N Elektrische Eigenschaften Electrical properties 400* 600 Höchstzulässige Werte Maximum permissible values V dRM. Vrrm Periodische Vorwärts- und repetitive peak forward off-state


    OCR Scan     		PDF T-91-20 5x315