TARF1504E Search Results

TARF1504E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
TARF1504E		Tachyonics	Microwave Transistor RF Small Signal Transistor		Original	PDF

TARF1504E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ice 38156 Abstract: 52169 TARF1504E 6012 transistor 20449 163462 76129 62639 160505 67551 Text: TARF1504E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1504E is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package	Original	PDF	TARF1504E OT-523 TARF1504E OT523 VC00GHz 800GHz 000GHz 200GHz 400GHz ice 38156 52169 6012 transistor 20449 163462 76129 62639 160505 67551
M 57741 Abstract: AB2 sot23 30424 ic 67551 150418 62726 554-1 682 SOT23 MARKING 155080 76129 Text: THN6501 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA	Original	PDF	THN6501 OT323 THN6501Z THN6501U OT343 THN6501E THN6501S 000GHz 200GHz M 57741 AB2 sot23 30424 ic 67551 150418 62726 554-1 682 SOT23 MARKING 155080 76129
M 57741 Abstract: marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080 Text: THN6501 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA	Original	PDF	THN6501 OT-523 THN6501S OT-23 OT-323 THN6501Z OT-343 THN6501E THN6501U 800GHz M 57741 marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080

Catalog Datasheet

MFG & Type

PDF

Document Tags

ice 38156

Abstract: 52169 TARF1504E 6012 transistor 20449 163462 76129 62639 160505 67551
Text: TARF1504E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1504E is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package

Original

PDF

TARF1504E OT-523 TARF1504E OT523 VC00GHz 800GHz 000GHz 200GHz 400GHz ice 38156 52169 6012 transistor 20449 163462 76129 62639 160505 67551

M 57741

Abstract: AB2 sot23 30424 ic 67551 150418 62726 554-1 682 SOT23 MARKING 155080 76129
Text: THN6501 Series SOT 523 Unit in mm NPN SiGe RF TRANSISTOR □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA

Original

PDF

THN6501 OT323 THN6501Z THN6501U OT343 THN6501E THN6501S 000GHz 200GHz M 57741 AB2 sot23 30424 ic 67551 150418 62726 554-1 682 SOT23 MARKING 155080 76129

M 57741

Abstract: marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080
Text: THN6501 Series Semiconductor SiGe NPN Transistor SOT-523 Unit in mm □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA

Original

PDF

THN6501 OT-523 THN6501S OT-23 OT-323 THN6501Z OT-343 THN6501E THN6501U 800GHz M 57741 marking 269-3 sot23 48358 76129 156917 149945 52169 30424 ic THN6501E 155080