TACAN TRANSISTOR 350W Search Results

TACAN TRANSISTOR 350W Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TACAN TRANSISTOR 350W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NPN 350W Abstract: TACAN transistor 350w TACAN transistor MRF10350 MRF10 Text: MRF10350 Microwave Pulse Power Silicon NPN Transistor 350W peak , 1025–1150MHz M/A-COM Products Released - Rev. 07.07 Product Image Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz	Original	PDF	MRF10350 1150MHz NPN 350W TACAN transistor 350w TACAN transistor MRF10350 MRF10
TACAN transistor 350w Abstract: MS2272 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2272 RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • • 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED POUT = 350W MINIMUM	Original	PDF	MS2272 MS2272 TACAN transistor 350w
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2272 RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS C • • • • • • • • 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED POUT = 350W MINIMUM	Original	PDF	MS2272 1234567869ABC 1234567869ABC MS2272 C8238C4654 DA64DFC1D8DC
6 pin TRANSISTOR SMD CODE CAA Abstract: TEA6721 BF991 spice model Text: RF マニュアル第 16 版ハイパフォーマンスRF製品用のアプリケーションおよび設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォーマンスがさらに向上 NXPの RF マニュアルは、	Original	PDF
transistor j380 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10350 The RF Line M icrowave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 350 W PEAK 1025-1150 MHz MICROWAVE POWER	OCR Scan	PDF	MRF10350 F10350 350wPk MRF10350 transistor j380