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    TAA 785 A IC Search Results

    TAA 785 A IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TAA 785 A IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MSM514260E-60J3

    Abstract: OKI PACKAGE INFORMATION PB
    Text: Semiconductor This version:Aug.2000 MSM514260E 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514260E is a 262,144-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM514260E achieves high integration, high-speed operation, and low-power consumption because Oki


    Original     		MSM514260E 144-Word 16-Bit MSM514260E 144-word 40-pin 44/40-pin MSM514260E-60J3 OKI PACKAGE INFORMATION PB PDF

    MS52C182A

    Abstract: No abstract text available
    Text: ¡ Semiconductor MS52C182A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 524,288-Word X 16-Bit or 1,048,576-Word X 8-Bit One Time PROM DESCRIPTION The MS52C182A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable


    Original     		MS52C182A 536-Word 16-Bit 072-Word 288-Word 576-Word MS52C182A PDF

    MS52C1161A

    Abstract: MS52C181A
    Text: ¡ Semiconductor MS52C181A 1998.6 Preliminary 131,072-Word X 8-Bit STATIC RAM + 1,048,576-Word X 8-Bit One Time PROM DESCRIPTION The MS52C181A is a131,072-word by 8-bit electrically switchable 1Mb static RAM and 1,048,576-word by 8-bit electrically switchable 8Mb One Time PROM featuring 2.7V to 3.6V


    Original     		MS52C181A 072-Word 576-Word MS52C181A 44-pin 48-pin 9mmx10mm) MS52C1161A PDF

    Untitled

    Abstract: No abstract text available
    Text: ¡ Semiconductor MS52C1162A 1998.6 Preliminary 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM + 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM DESCRIPTION The MS52C1162A is a 65,536 -word by 16 -bit / 131,072-word by 8-bit electrically switchable


    Original     		MS52C1162A 536-Word 16-Bit 072-Word 576-Word 152-Word MS52C1162A PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Updated to current MIL-PRF-38535 requirements. lht 13-04-17 APPROVED Charles F. Saffle REV SHEET REV A A A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS


    Original     		MIL-PRF-38535 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000A32 SERIES 4M -WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C-424000A32 series is a 4 194 304 words by 32 bits dynamic RAM module on which 8 pieces of 16M DRAM uPD 4217400 are assembled.


    OCR Scan     		MC-424000A32 32-BIT C-424000A32 110ns 424000A32-60 424000A32-70 LjM27525 00SSti 00SSL0S PDF

    Untitled

    Abstract: No abstract text available
    Text: HY5117400A Series ••HYUNDAI 4M x 4-bit CMOS DRAM DESCRIPTION me HY5117400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. "Hie HY5117400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		HY5117400A HY5117400A 1AD27-10-MAY94 HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM68V4000B, KM68U4000B Family CMOS SRAM 512Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm CMOS T he K M 68V 4000B and K M 68U 4000B fam ily are • Organization : 512K x 8 fabricated by SAMSUNG’S advanced CM O S process


    OCR Scan     		KM68V4000B, KM68U4000B 512Kx8 KM68V4000B 32-SOP, 32-TSOP 4000B PDF

    004II

    Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
    Text: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V


    OCR Scan     		KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68V512Aand 004II a1215 KM68U512ALE-L KM68U512ALTGE-8L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V


    OCR Scan     		KM68V512A, KM68U512A 64Kx8 KM68V512A 32-SOP, 32-TSOP KM68V512Aand PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V4000A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tCAC tR C KM44V4000A/AL7ALL/ASL-6 60ns 15ns 110ns KM44V4000A/AUALL/ASL-7 70ns 20ns 130ns KM44V4000A/AL/ALL/ASL-8 80ns


    OCR Scan     		KM44V4000A/AL/ALL/ASL KM44V4000A/AL7ALL/ASL-6 110ns KM44V4000A/AUALL/ASL-7 130ns KM44V4000A/AL/ALL/ASL-8 KM44V4000A/AL/ALL/ASL 150ns 24-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E I • 7 T b 4 1 4 2 D D l b l G 3 025 H S M G K KM41C16101 CMOS DRAM 1 6 M x 1 Bit CM OS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16101 is a CMOS high speed 16,777,216 bit x 1 Dynamic Random Access Memory. Its


    OCR Scan     		KM41C16101 KM41C16101 110ns KM41C16101-7 130ns KM41C16101-8 150ns KM41C16101-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA S H E E T 4 M-BIT DYNAMIC RAM 256 K-WORD B Y 16-BIT, HYPER PA GE MODE, B Y T E READ/W RITE MODE Description The ^PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.


    OCR Scan     		16-BIT, PD42S4210-60-G 424210-60-G /PD42S4210-60-G 44-pin 40-pin J/PD42S4210-60-G 424210-60-G pPD42S4210-60-G PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT71321SA/LA HIGH SPEED IDT71421SA/LA 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS F eatures ♦ MASTER IDT71321 easily expands data bus width to 16-or- ♦ High-speed access IDT71321/IDT71421SA more-bits using SLAVE IDT71421 ♦ On-chip port arbitration logic IDT71321 only


    OCR Scan     		IDT71321SA/LA IDT71421SA/LA IDT71321 16-or- IDT71321/IDT71421SA IDT71421 IDT71321; 325mW PDF

    T7026

    Abstract: No abstract text available
    Text: HIGH-SPEED 16K X 16 DUAL-PORT STATIC RAM IDT7026S/L Features * * * * plexed bus compatibility IDT7026 easily expands data bus width to 32 bits or more using the Master/Slave select when cascading more than one d e v ic e _ ♦ M/S = H for BUSY output flag on Master,


    OCR Scan     		IDT7026S/L IDT7026 20125135155ns 15120125135155ns IDT7026S 750mW MS-018, 910-M T7026 PDF

    TRW J500

    Abstract: k45752 52S marking
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and


    OCR Scan     		uPD42S4260L uPD424260L 16-BIT, fiPD42S4260L, 424260L PD42S4260L 44-pin 40-pin /jPD42S4260L-A70, 424260L-A70 TRW J500 k45752 52S marking PDF

    TWFC

    Abstract: No abstract text available
    Text: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ♦ ♦ ♦ ♦ ♦ BUSY output flag on IDT71V321 ; BUSY input on IDT71V421 Fully asynchronous operation from either port Battery backup operation— 2V data retention


    OCR Scan     		IDT71V321S/L IDT71V421S/L 25135155ns IDT71V321/IDT71V421S 325mW IDT71V321A/421 IDT71V321 IDT71V421 52-pin TWFC PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4100 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Perform ance range: The Samsung K M 4 4 C 4 1 0 0 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random A ccess Mem ory. Its design is optim ized for high perform ance applications


    OCR Scan     		KM44C4100 130ns 24-LEAD PDF

    MO-081

    Abstract: No abstract text available
    Text: IDT7133SA/LA IDT7143SA/LA HIGH SPEED 2 K X 16 DUAL-PORT SRAM î * 44k 4 'S 4k «h* '> «% • % « «' S S*'» «t % *S ««Í '■ •*SÂfea! F e a tu re s ♦ High-speed access ♦ BUSY output flag on IDT7133; BUSY input on IDT7143 - M ilitary: 25/35/45/55/70/90ns max.


    OCR Scan     		IDT7133SA/LA IDT7143SA/LA IDT7133; IDT7143 68-pin 100-pin IL-PRF-38535Q 25/35/45/55/70/90ns 20/25/35/45/55/70/90ns IDT7133/43SA MO-081 PDF

    tca 786

    Abstract: RS5104 RS-5104 TCA 789
    Text: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode


    OCR Scan     		HM5117400B 304-word ADE-203-369A mW/550 mW/495 HM51174 tca 786 RS5104 RS-5104 TCA 789 PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56A49 Series 4,194,304-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A49 is a 4M x 9 dynamic RAM module, mount­ ed 9 pieces of 4 Mbit DRAM HM514100AS, HM514100JP sealed in an SOJ package. An outline of the HB56A49 is the


    OCR Scan     		HB56A49 304-Word HM514100AS, HM514100JP) 30-pin HB56A49 56A49 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE D e sc rip tio n F e a tu re s • High-speed access - Commercial: 20/25/35/45/55/70ns max. • Low-power operation - IDT71342SA Active: 700mW(typ.) Standby: 5m W (typ.) - ID T 7 1 3 4 2 S A /L A IDT71342LA


    OCR Scan     		20/25/35/45/55/70ns IDT71342SA 700mW IDT71342LA T71342 492-M PDF

    Untitled

    Abstract: No abstract text available
    Text: PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1 ,0 2 4 x 1 8 IDT72511 IDT72521 In t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • Two side-by-side FIFO memory arrays for bidirectional data transfers • 512 x 18-Bit - 512 x 18-Bit IDT72511


    OCR Scan     		IDT72511 IDT72521 18-Bit 18-Bit IDT72511) IDT72521) 18-to-18-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic M671342 S e m i c o n d u c t o r s 4 K x 8 CMOS Dual Port RAM with Semaphore Introduction The M671342 is a very low power CMOS dual port static RAM organised as 4096 x 8, with full hardware support of semaphore signaling between the two ports. The M671342 device provide two independant ports with


    OCR Scan     		M671342 M671342 Sflbfl45b D0G743S PDF