HGTG5N120BND
Abstract: 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 HGTP5N120BND RHRD6120 TA49308 TB334
Text: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTG5N120BND,
HGTP5N120BND
HGTG5N120BND
HGTP5N120BND
TA49308.
TA49058
RHRD6120)
5n120bnd
5n120
TA49058
mosfet 600v 10a to-220ab
IC-2521
RHRD6120
TA49308
TB334
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HR6120
Abstract: RHRD6120 RHRD6120S RHRD6120S9A TA49058
Text: RHRD6120, RHRD6120S Data Sheet Title HR 120, HRD 20S bt A, 00V pert odes utho eyrds terrpoon, minctor, ache ergy ted, itch wer pes, wer itch - January 2000 File Number 3981.1 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with
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RHRD6120,
RHRD6120S
RHRD6120
RHRD6120S
HR6120
RHRD6120S9A
TA49058
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
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5n120bnd
Abstract: mosfet 5N120bnd TA49306 5n120 HGT1S5N120BNDS HGTG5N120BND HGTP5N120BND RHRD6120 TA49058 TA49308
Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120BND,
HGTP5N120BND,
HGT1S5N120BNDS
HGTG5N120BN,
HGT1S5N120BNDS
TA49308.
TA49058
RHRD6120)
5n120bnd
mosfet 5N120bnd
TA49306
5n120
HGTG5N120BND
HGTP5N120BND
RHRD6120
TA49058
TA49308
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5N120CND
Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 transistors equivalent
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
5N120CND
5n120
12V 200A Relay
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
transistors equivalent
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC July 1996 Title HRP 20C bt A, 00V pert al ode utho rpoon, pert al ode, ache ergy ted, 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns). It has half the recovery time of ultrafast diodes and is silicon nitride
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RHRP6120CC
RHRP6120CC
RHR6120C
TA49058
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode January 1996 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC TO-220AB o ANODE 2 CATHODE ANODE 1 • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RHRP6120CC
O-220AB
RHRP6120CC
1-800-4-HARRIS
RHR6120C
TA49058
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HR6120
Abstract: TA49058 RHRD6120 RHRD6120S RHRD6120S9A
Text: RHRD6120, RHRD6120S Data Sheet January 2002 6A, 1200V Hyperfast Diodes Features The RHRD6120 and RHRD6120S are hyperfast diodes with soft recovery characteristics trr < 55ns . They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRD6120,
RHRD6120S
RHRD6120
RHRD6120S
175oC
HR6120
TA49058
RHRD6120S9A
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5N120BND
Abstract: mosfet 5N120bnd 5n120 HGTG5N120BND 12V 200A Relay HGT1S5N120BNDS HGTP5N120BND RHRD6120 TA49058 TA49308
Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet January 2000 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120BND,
HGTP5N120BND,
HGT1S5N120BNDS
HGTG5N120BN,
HGT1S5N120BNDS
TA49308.
TA49058
RHRD6120)
5N120BND
mosfet 5N120bnd
5n120
HGTG5N120BND
12V 200A Relay
HGTP5N120BND
RHRD6120
TA49058
TA49308
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC January 2002 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
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HGTP5N120BND
Abstract: No abstract text available
Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet November 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120BND,
HGTP5N120BND,
HGT1S5N120BNDS
HGT1S5N120BNDS
TA49308.
TA49058
RHRD6120)
HGTP5N120BND
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RHR6120C
Abstract: RHRP6120CC TA49058
Text: RHRP6120CC July 1996 File Number 4091.1 6A, 1200V Hyperfast Dual Diode Features The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP6120CC
RHRP6120CC
175oC
RHR6120C
TA49058
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diode 1334
Abstract: RHR6120C RHRP6120CC TA49058
Text: RHRP6120CC S E M I C O N D U C T O R 6A, 1200V Hyperfast Dual Diode July 1996 Features Description • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns The RHRP6120CC is a hyperfast dual diode with soft recovery characteristics tRR < 55ns . It has half the recovery time
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RHRP6120CC
RHRP6120CC
175oC
1-800-4-HARRIS
diode 1334
RHR6120C
TA49058
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mosfet 5N120bnd
Abstract: No abstract text available
Text: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT
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HGTG5N120BND,
HGTP5N120BND
HGTG5N120BND
HGTP5N120BND
TA49308.
TA49058
RHRD6120)
mosfet 5N120bnd
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5N120CND
Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
5N120CND
5n120
12V 200A Relay
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
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5n120bnd
Abstract: HGT1S5N120BNDS mosfet 5N120bnd IC-2521 5n120 HGTG5N120BND 12V 200A Relay HGTP5N120BND RHRD6120 TA49058
Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120BND,
HGTP5N120BND,
HGT1S5N120BNDS
HGT1S5N120BNDS
TA49308.
TA49058
RHRD6120)
5n120bnd
mosfet 5N120bnd
IC-2521
5n120
HGTG5N120BND
12V 200A Relay
HGTP5N120BND
RHRD6120
TA49058
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HR6120
Abstract: TA49058 RHRD6120 RHRD6120S
Text: RHRD6120, RHRD6120S S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<55ns JEDEC STYLE TO-251 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RHRD6120,
RHRD6120S
O-251
O-252
RHRD6120
TA49058)
HR6120
TA49058
RHRD6120S
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HGT1S5N120CNDS
Abstract: HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
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5n120
Abstract: 5N120CND 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 5N120CN
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
5n120
5N120CND
12V 200A Relay
HGT1S5N120CNDS9A
HGTG5N120CND
TA49058
TB334
5N120CN
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Untitled
Abstract: No abstract text available
Text: a RHRP6120CC HARRIS S E M I C O N D U C T O R juiy 1996 6A, 1200V Hyperfast Dual Diode Features Description • Hyperfast with Soft R ecovery. <55ns • Operating T em p eratu
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RHRP6120CC
O-220AB
00b7237
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RD6120
Abstract: No abstract text available
Text: RHRD6120, RHRD6120S fil IH A R R IS U U S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft R eco • Operating Tem p eratu
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RHRD6120,
RHRD6120S
O-251
RHRD6120
TA49058)
RHRD6120S
RD6120
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5n120bnd
Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND
Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120BND,
HGTP5N120BND,
HGT1S5N120BNDS
HGTG5N120BN,
HGT1S5N120BNDS
TA49308.
TA49058
RHRD6120)
1-800-4-HARRIS
5n120bnd
transistor de 1200v 5a
TP5N12
HGTG5N120BND
HGTP5N120BND
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Untitled
Abstract: No abstract text available
Text: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J an u ary 1999 D ata S h eet 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120BND,
HGTP5N120BND,
HGT1S5N120BNDS
HGTG5N120BN,
HGT1S5N120BNDS
TA49308.
TA49058
RHRD6120)
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS S e m iconductor Data Sheet March 1999 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high
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HGTG5N120CND,
HGTP5N120CND,
HGT1S5N120CNDS
HGTP5N120CND
HGT1S5N120CNDS
TA49309.
TA49058.
1-800-4-HARRIS
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