2SK2403
Abstract: No abstract text available
Text: 2SK2403 Ordering number : EN8602 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2403 General-Purpose Switching Device Applications Features • • Built-in FRD. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage
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EN8602
2SK2403
PW10s,
2SK2403
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8602 RECTIFIER
Abstract: 1N6492 LE17 MIL-PRF19500 QR217 EG marking
Text: HERMETIC SCHOTTKY RECTIFIER 1N6492 • • • • • Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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1N6492
1N6492-JQRS
8602 RECTIFIER
1N6492
LE17
MIL-PRF19500
QR217
EG marking
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Untitled
Abstract: No abstract text available
Text: HERMETIC SCHOTTKY RECTIFIER 1N6492 • • • • • Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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1N6492
1N6492-JQRS
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LQA12T300C
Abstract: No abstract text available
Text: LQA12T300C, LQA12B300C Qspeed Family 300 V, 12 A Q-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 300 27 1.87 0.7 General Description A V nC A Pin Assignment
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LQA12T300C,
LQA12B300C
O-220AB
LQA12T300C
O-263AB
LQA12B300C
Bangalore-560052
LQA12T300C
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TOPSWITCH 242
Abstract: D803
Text: LXA04T600, LXA04B600 Qspeed Family 600 V, 4 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 General Description A V nC A This device has the lowest QRR of any 600V
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LXA04T600,
LXA04B600
O-220AC
LXA04T600
O-263AB
LXA04B600
Bangalore-560052
TOPSWITCH 242
D803
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AN-300
Abstract: EMI filter 500a LXA03T600 LXA03B600
Text: LXA03T600, LXA03B600 Qspeed Family 600 V, 3 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 3 600 43 2.3 0.9 General Description A V nC A This device has the lowest QRR of any 600V
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LXA03T600,
LXA03B600
O-220AC
O-263AB
LXA03T600
AN-300
EMI filter 500a
LXA03T600
LXA03B600
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lxa04t600
Abstract: DIODE 200A 600V schottky AN-300 SCHOTTKY 4A 600V TOPSWITCH 242 lxa04
Text: LXA04T600, LXA04B600 QSpeed Family 600 V, 4 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 A V nC A General Description This device has the lowest QRR of any 600V
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LXA04T600,
LXA04B600
O-220AC
O-263AB
LXA04T600
lxa04t600
DIODE 200A 600V schottky
AN-300
SCHOTTKY 4A 600V
TOPSWITCH 242
lxa04
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LQA30T300
Abstract: No abstract text available
Text: LQA30T300 Qspeed Family 300 V, 30 A Q-Series Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 30 300 53 2.85 0.6 General Description A V nC A This device has the lowest QRR of any 300V Silicon diode.
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LQA30T300
Bangalore-560052
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LXA06T600
Abstract: AN-300 s 498
Text: LXA06T600, LXA06B600 Qspeed Family 600 V, 6 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 600 71 3.1 0.7 General Description A V nC A This device has the lowest QRR of any 600V
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LXA06T600,
LXA06B600
O-220AC
O-263AB
LXA06T600
LXA06T600
AN-300
s 498
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AN-300
Abstract: No abstract text available
Text: LQA06T300 Qspeed Family 300 V, 6 A Q-Series Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 6 300 27 1.87 0.7 General Description This device has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics
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LQA06T300
AN-300
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Untitled
Abstract: No abstract text available
Text: LXA10T600, LXA10FP600 Qspeed Family 600 V, 10 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 600 94 3.85 0.5 General Description A V nC A This device has the lowest QRR of any 600V
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LXA10T600,
LXA10FP600
LXA10FP600
2500VRMS
O-220AC
LXA010T600
Bangalore-560052
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AN-300
Abstract: LXA15T600
Text: LXA15T600 Qspeed Family 600 V, 15 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 15 600 120 4.6 0.45 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.
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LXA15T600
AN-300
LXA15T600
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QH12TZ600
Abstract: AN-300
Text: QH12TZ600 Qspeed Family 600 V, 12 A H-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 12 600 30 2.2 0.65 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.
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QH12TZ600
QH12TZ600
AN-300
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TOPSWITCH 242
Abstract: topswitch StackFET
Text: LXA08T600C Qspeed Family 600 V, 8 A X-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 General Description A V nC A This device has the lowest QRR of any 600V
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LXA08T600C
O-220AB
Bangalore-560052
TOPSWITCH 242
topswitch StackFET
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VR200
Abstract: No abstract text available
Text: LQA32T300C Qspeed Family 300 V, 32 A Q-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 16 300 44 2.65 0.7 General Description A V nC A This device has the lowest QRR of any 300V
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LQA32T300C
O-220AB
Bangalore-560052
VR200
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AN-300
Abstract: VR400
Text: QH08TZ600 Qspeed Family 600 V, 8 A H-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 8 600 25.5 1.9 0.75 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.
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QH08TZ600
AN-300
VR400
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AN-300
Abstract: 120Qrr D-80336 lxa08t600
Text: LXA08T600, LXA08B600, LXA08FP600 Qspeed Family 600 V, 8 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 8 600 82 3.5 0.55 General Description A V nC A This device has the lowest QRR of any 600V
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LXA08T600,
LXA08B600,
LXA08FP600
O-220AC
O-263AB
LXA08T600
LXA08B600
2500VRMS
Ben1252-730-141
AN-300
120Qrr
D-80336
lxa08t600
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VR200
Abstract: No abstract text available
Text: LQA30A300C Qspeed Family 300 V, 30 A Q-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 15 300 47 2.7 0.7 General Description A V nC A This device has the lowest QRR of any 300V
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LQA30A300C
O-247
Bangalore-560052
VR200
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AN-300
Abstract: LQA10T300
Text: LQA10T300 Qspeed Family 300 V, 10 A Q-Series Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 300 38 2.3 0.7 General Description A V nC A This device has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics
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LQA10T300
AN-300
LQA10T300
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AN-300
Abstract: topswitch pfc
Text: LQA03TC600 Qspeed Family 600 V, 3 A Q-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 3 600 17.5 1.28 1.5 General Description A V nC A This device has the lowest QRR of any 600 V Silicon diode.
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LQA03TC600
AN-300
topswitch pfc
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Untitled
Abstract: No abstract text available
Text: LXA20T600 Qspeed Family 600 V, 20 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 20 600 140 5.0 0.4 General Description A V nC A This device has the lowest QRR of any 600V Silicon diode.
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LXA20T600
O-220AC
Bangalore-560052
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LQA16T300
Abstract: No abstract text available
Text: LQA16T300 Qspeed Family 300 V, 16 A Q-Series Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 16 300 44 2.65 0.7 General Description A V nC A This device has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics
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LQA16T300
O-220AC
Bangalore-560052
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Untitled
Abstract: No abstract text available
Text: LQA60A300C Qspeed Family 300 V, 60 A Q-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 30 300 53 2.85 0.6 General Description A V nC A This device has the lowest QRR of any 300V
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LQA60A300C
O-247
Bangalore-560052
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maxim max 1987
Abstract: wiring diagram contractor 190B D-10 marking code maxim label marking wt2 marking YA AM29705A
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION O u tlin e l e t t e r , Y , case o u tlin e changed to F - l l fo r standard iz a t io n . Convert to m ilit a r y drawing form at. E d it o r ia l changes throughout. APPROVED 1988 JAN 19 1989 APR 04 Make changes to ta b le I , ta b le I I , 1 .2 .2 , 3 .3 , and 4 .3 .
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16-WORD
8602501XX
AM29705A/BXA
8602501YX
AM29705A/BYA
86025013X
AM29705A/B3A
maxim max 1987
wiring diagram contractor
190B
D-10
marking code maxim label
marking wt2
marking YA
AM29705A
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