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    TA 7644 BF Search Results

    TA 7644 BF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-87644022A Renesas Electronics Corporation OCTAL D LATCH Visit Renesas Electronics Corporation
    5962-8764402RA Renesas Electronics Corporation OCTAL D LATCH Visit Renesas Electronics Corporation
    5962-87644012A Renesas Electronics Corporation OCTAL D LATCH Visit Renesas Electronics Corporation
    5962-8764401RA Renesas Electronics Corporation OCTAL D LATCH Visit Renesas Electronics Corporation
    5962-8764402SA Renesas Electronics Corporation OCTAL D LATCH Visit Renesas Electronics Corporation

    TA 7644 BF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32107

    Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
    Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


    Original     		PDF SST27SF256 SST27SF256 32107 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721

    oasis

    Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


    Original     		PDF SST27SF020 SST27SF020 oasis 32-PIN A103 A114 A115 90-3C-PH 2t926

    27sf512

    Abstract: sst mtp 27sf512 sst 27sf512 eprom mtp 27sf512 27sf512 70 3C 28 PIN 27SF512 TA 7644 BF CI 7446 Oasis 27sf512-55
    Text: 512 Kilobit 64K x 8 SuperFlash MTP SST27SF512, SST27VF512 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF512 • 2.7-Volt Read Operation for 27VF512 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention


    Original     		PDF SST27SF512, SST27VF512 27SF512 27VF512 27SF512 sst mtp 27sf512 sst 27sf512 eprom mtp 27sf512 27sf512 70 3C 28 PIN 27SF512 TA 7644 BF CI 7446 Oasis 27sf512-55

    29EE010

    Abstract: CI 7446 29LE010 SST29EE010 SST29LE010 SST29VE010 29EE010-120 29EE010-90 Taiwan Oasis Enterprise Co., LTD
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29EE010, SST29LE010, SST29VE010 29EE010 29LE010 29VE010 29EE010 CI 7446 29LE010 SST29EE010 SST29LE010 SST29VE010 29EE010-120 29EE010-90 Taiwan Oasis Enterprise Co., LTD

    oasis

    Abstract: No abstract text available
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 • Single 3.0-3.6V Read and Write Operations • Superior Reliability


    Original     		PDF SST39LH512 SST39LH010 SST39LH020 SST39LH040 SST39LH010 oasis

    29VE010A

    Abstract: SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29EE010A SST29LE010A SST29VE010A
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010A / SST29LE010A / SST29VE010A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE010A – 3.0-3.6V for the SST29LE010A – 2.7-3.6V for the SST29VE010A • Superior Reliability


    Original     		PDF SST29EE010A SST29LE010A SST29VE010A SST29EE010A SST29LE010A SST29EE010A/29LE010A/29VE010A 29VE010A SW2-303 metatech 300 microtek ups circuit diagram oasis TA 7644 BF SST29VE010A

    27721

    Abstract: Actron diagram ta 306 oasis 29ee020
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020A – 3.0-3.6V for the SST29LE020A – 2.7-3.6V for the SST29VE020A • Superior Reliability


    Original     		PDF SST29EE020A SST29LE020A SST29VE020A SST29EE020A SST29LE020A SST29EE020A/29LE020A/29VE020A 27721 Actron diagram ta 306 oasis 29ee020

    29EE010

    Abstract: pelco CI 7446 datasheet and application 7217 oasis 29LE010 SST29EE010 SST29LE010 SST29VE010 great lakes
    Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29EE010, SST29LE010, SST29VE010 29EE010 29LE010 29VE010 operati-0820 29EE010 pelco CI 7446 datasheet and application 7217 oasis 29LE010 SST29EE010 SST29LE010 SST29VE010 great lakes

    TA 7644 BF

    Abstract: oasis 32-PIN
    Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512A – 3.0-3.6V for SST29LE512A – 2.7-3.6V for SST29VE512A • Superior Reliability


    Original     		PDF SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A TA 7644 BF oasis 32-PIN

    TA 7644 BF

    Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 TA 7644 BF cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049

    oasis

    Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
    Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability


    Original     		PDF SST29EE020 SST29LE020 SST29VE020 SST29EE020 SST29LE020 SST29EE020/29LE020/29VE020 oasis 29VE020 SST29VE020 ms-1307

    NEXUS FLASH ERASE

    Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
    Text: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:


    Original     		PDF SST31LH021 ye498404 NEXUS FLASH ERASE 353 flash oasis 32-PIN F01A SST31LH021 31LH021

    tekelec TA 355

    Abstract: NEXUS FLASH ERASE oasis SST31LH103
    Text: 1 Megabit Flash + 256 Kilobit SRAM ComboMemory SST31LH103 Advance Information FEATURES: • Organized as 64K x16 Flash + 16K x16 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations 2.7-3.6V without concurrent operation


    Original     		PDF SST31LH103 Cyc316116 tekelec TA 355 NEXUS FLASH ERASE oasis SST31LH103

    oasis

    Abstract: 32-PIN F01A SST31LH041 Actron
    Text: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


    Original     		PDF SST31LH041 D16116 oasis 32-PIN F01A SST31LH041 Actron

    AP 309

    Abstract: oasis 28VF040 SST28LF040 SST28SF040 SST28VF040 0418 bd china SST28SF040-120-3C- EH
    Text: 4 Megabit 512K x 8 SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST28SF040 – 3.0-3.6V for the SST28LF040 – 2.7-3.6V for the SST28VF040 • Superior Reliability


    Original     		PDF SST28SF040 SST28LF040 SST28VF040 SST28SF040 SST28LF040 AP 309 oasis 28VF040 SST28VF040 0418 bd china SST28SF040-120-3C- EH

    CHN 345 X

    Abstract: No abstract text available
    Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


    OCR Scan     		PDF SST37VF040 32-Pin SST37VF040 CHN 345 X

    Untitled

    Abstract: No abstract text available
    Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


    OCR Scan     		PDF SST37VF512 32-Pin SST37VF512 pro-657-0204

    chn 347

    Abstract: No abstract text available
    Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


    OCR Scan     		PDF SST37VF010 32-Pin SST37VF010 chn 347

    chn 348

    Abstract: CHN 314 chn 317 CHN 852 chn 440
    Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


    OCR Scan     		PDF SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440

    1/CHN 326

    Abstract: No abstract text available
    Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


    OCR Scan     		PDF SST39SF020 1/CHN 326

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


    OCR Scan     		PDF SST39SF512 CHN 512 CHN 314 1/CHN 852

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:


    OCR Scan     		PDF SST39SF010

    Untitled

    Abstract: No abstract text available
    Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


    OCR Scan     		PDF SST39VF080Q_ SST39VF080Q

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


    OCR Scan     		PDF SST39VF016Q_ SST39VF016Q Multi58-4276 27721