Untitled
Abstract: No abstract text available
Text: Identification Systems Control Panel Labelling 5.3 Cotton cloth labels, manual marking • HELASIGN, Material 265 White , A4 Sheets Features and Benefits These labels are manufactured from a robust cotton fabric which is easily inscribed and applied. Text remains permanently legible and
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TAG124FA4-265-WH
TAG126FA4-265-WH
TAG125FA4-265-WH
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Untitled
Abstract: No abstract text available
Text: Identification Systems Wire and Cable Markers 5.2 Self-laminating labels, manual marking • RiteOn, Starter Pack, Material 1401 dispenser Features and Benefits These self-laminating labels provide simple and rapid identification for low volume installation and rework. The coloured text
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-1401-WH
RO201REF-1401-WH
RO202REF-1401-WH
RO203REF-1401-WH
T82S-BK
T82R-RD
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Untitled
Abstract: No abstract text available
Text: 5.3 Identification Systems Control Panel Labelling Cotton cloth labels, manual marking • HELASIGN, Material 270 Yellow , A4 Sheets Features and Benefits These labels are manufactured from a robust cotton fabric which is easily inscribed and applied. Text remains permanently legible and
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TAG128A4-270-YE
TAG122FA4-270-YE
TAG124FA4-270-YE
TAG121FA4-270-YE
TAG125FA4-270-YE
TAG127FA4-270-YE
TAG128FA4-270-YE
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Untitled
Abstract: No abstract text available
Text: 5.2 Identification Systems Wire and Cable Markers Carrier Marking System, laser • Helafix HFX Labels Features and Benefits The HFX labels have been specially developed for application with the Helafix carrier strip. They are supplied in the DIN A4 format and
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HFX12-52P
HFX12-105P
HFX12-210P
HFX24-105P
HFX24-210P
HFX48-105P
HFX48-210P
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ma 8920
Abstract: ZO 607 transistor ic 7490 data sheet 2SC4956 2SC4956-T1 2SC4956-T2 51160
Text: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.20 pF TYP.
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2SC4956
2SC4956-T2
2SC4956-T1
ma 8920
ZO 607 transistor
ic 7490 data sheet
2SC4956
2SC4956-T1
2SC4956-T2
51160
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2SC4958
Abstract: nec 473
Text: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance
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2SC4958
2SC4958)
2SC4958
nec 473
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NEC 2581
Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
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2SC4954
2SC4954-T2
2SC4954-T1
NEC 2581
nec 2405
2581 NEC
zo 103 ma 75 607
30460
pulse 01940
9590
IC 2030 PIN CONNECTIONS
5598 transistor
2SC4954-T1
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NEC 2581
Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05
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2SC4954
2SC4954-T1
NEC 2581
nec 258
2581 NEC
574 nec
2SC4954
2SC4954-T1
2SC4954-T2
26480
30460
NEC 821
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2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
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P10100EJ6V0SG00
2SK2396A
NEC 2SK2396A
k2396a
pc1658
2SC2407
P10100EJ6V0SG00
UAA 1006
k2396
K2597
Marking Code SAW MOS transistor
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7420 ic details
Abstract: 2SC4958
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistor NEC D 587
Abstract: transistor NEC D 986 ic 7490 data sheet ic MA 7840 2SC4956 2SC4956-T1 2SC4956-T2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: ø22mm HW Series Control Units 14/05/22 ø22 HW Series Selection Guide Function Category Emergency Stop Switch (Unibody) Emergency Stop Switch (with Removable Contact Block) Pushlock Turn Reset ø40mm Mushroom ø40mm Mushroom (Illuminated) ø29mm Mushroom
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Mu-6135-6225
EP1455-1
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NEC 2581
Abstract: 2SC4954 2SC4954-T1 2SC4954-T2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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UPA805T
Abstract: pulse 01940 ic 7420 2SC4958 ID-9146 08670
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA805T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Noise, High Gain (Unit: mm) • Operable at Low Voltage 2.1±0.1 • Small Feed-back Capacitance
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PA805T
PA805T-T1
2SC495Special:
UPA805T
pulse 01940
ic 7420
2SC4958
ID-9146
08670
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UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
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D-40472
I-20124
I-00139
D-30177
GB-MK14
D-81925
S-18322
F-78142
E-28007
UAA 1006
manual* cygnus sl 5000
transistor marking T79 ghz
PC1658G
NEC Ga FET marking code T79
gaas fet T79
pc1658
MC-7712
2SC5431
NEC U71
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C105t Diode
Abstract: C105T t60403-d4615 IGBT DRIVER application note T60403-D4615-X054 IGBT DRIVER SCHEMATIC 2ED250E12-F T6B smd marking 1ED020I12-F tyco igbt module
Text: Application Note, V1.0, February. 2009 AN2008-05 2ED250E12-F_EVAL Evaluation Driver Board for 1200V PrimePACK IFAG IMM INP M Edition 2009-09-21 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009. All Rights Reserved.
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AN2008-05
2ED250E12-F
2ED250E17-F
C105t Diode
C105T
t60403-d4615
IGBT DRIVER application note
T60403-D4615-X054
IGBT DRIVER SCHEMATIC
T6B smd marking
1ED020I12-F
tyco igbt module
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T410
Abstract: Triac T435 triac 800V 1A WT-410
Text: f= 7 ^ •T # S G S -T H O M S O N T 4 io M E E S m iig T O iM tg S _ T 4 3 5 HIGH PERFORMANCE TRIACS FEATURES 4A • V drm = 400 V to 800 V . SENSITIVE GATE : lGT< 1 0 m A . HIGH COMMUTATION : dl/dt c>3.5 A/ms ■ ITRM S = DESCRIPTION The T410 / T435 high voltage TRIAC Families
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T0220AB,
OT194
ISOWATT220AB
194/SO
ATT220AB
T410
Triac T435
triac 800V 1A
WT-410
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transistor NEC D 587
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.20 pF TYP.
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2SC4956
2SC4956-T1
2SC4956-T2
2SC4956)
CONNECTI50
transistor NEC D 587
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IC 811 0400 01
Abstract: TRANSISTOR 2SC 950
Text: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters , 1.25 ±0.1
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2SC4958
4958-T2
Par370
IC 811 0400 01
TRANSISTOR 2SC 950
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ROHM Electronics 1n4004 52mm
Abstract: 1N4003 1N4001 silicon 1n4004 52mm R1N4001 N4001 1N4001 1N4002 1N4004 T-81
Text: IRHM T ñ S f i ' m O D DR Ol ? fiMT 1N4001 - l'rico' ''K ' ihm -1N4004/5 SEMICONDUCTORS ROHM ELECTRONICS 3034 Owen Drive, Antioch, TN 37013 - TEL: 615 641-2020 FAX:(615)641 -2022 . nn. Ä I Silicon Diffused Junction Glass-Sealed Rectifying Diodes APPLICATION
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4oofA-1N4004/?
DO-41
DO-41)
1N4001
1N4002
1N4003
1N4004
ROHM Electronics 1n4004 52mm
1N4001 silicon
1n4004 52mm
R1N4001
N4001
T-81
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VMPT-10
Abstract: 4262A MIL-C-15305 43 toroid core VMPT-560 VMPT-1000
Text: V S E X R A X INI 1 D O 1 A IM L G > 1 TOROIDAL INDUCTORS # Stable powdered iron cores # Low external magnetic field semi-bright. Carrier material is Vectra , a liquid crystal polymer plastic meeting the requirements of MIL-M-24519C. Vectra can be used continuously at 254°C 489°F , has a melt point of 280°C
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VMPT-390
VMPT-470
VMPT-560
VMPT-680
VMPT-820
VMPT-1000
VMPT-1200
VMPT-1500
VMPT-1800
3333EÃ
VMPT-10
4262A
MIL-C-15305
43 toroid core
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R02AM
Abstract: C4311
Text: POUEREX INC ~~TI DE~| TETMbEl 00017Ö3 7 f T ' 2.JT ' z.o Phase Control Thyristors SCRs I tiav) m To =65° C 50% Duty Cycle, Half Sine (Amps) Idrm/Irrm for @ Rated Fusing Vdrm/Vrrm @ 8.3 ms Vdrm /V rrm and Tj(M ax) / A2 sec\ Range (mA) [ x I0 y (Volts) (Amps x 103)
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wiring diagram of o general window ac
Abstract: marking T79 DPDT 6 terminal window switch DR 25 specifications MLW3029 MLW3020
Text: MINIATURE/SNAP-IN MOUNTED/POWER RATED DISTINCTIVE FEATURES Industry’s first miniature snap-in, lighted rocker switch. Patented internationally. Actuators in various styles operate with firm, well-defined movements. Interlocking actuator prevents switch failure due to jamming or window locking.
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MLW3022-F1C-1A
MLW3022-F5C-2A
b42fl77b
wiring diagram of o general window ac
marking T79
DPDT 6 terminal window switch
DR 25 specifications
MLW3029
MLW3020
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NEC 2532 n 749
Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5014
2SC5014-T1
2SC5014-T2
2SC5014)
NEC 2532 n 749
NEC 2532
PT1060
transistor NEC D 822 P
transistor NEC D 587
NEC 2134 transistor
transistor c 6091
transistor sp 772
SP 2822
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