Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    T6N 700 Search Results

    T6N 700 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T6N700COC Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    T6N700HOC Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    T6N 700 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    MICRON BGA PART MARKING

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING

    MICRON BGA PART MARKING

    Abstract: NF 034 T6N 700 MT49H16M18
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18

    MICRON BGA PART MARKING

    Abstract: MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M36

    smd code marking x18

    Abstract: MT49H16M36
    Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H64M9 – 64 Meg x 9 x 8 Banks MT49H32M18 – 32 Meg x 18 x 8 Banks MT49H16M36 – 16 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd code marking x18 MT49H16M36

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3-B

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    L9D222G72BG3

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3 L9D222G72BG3

    AS4DDR232M72PBG

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D225G80BG5 2.5 Gb, DDR2, 32 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D225G80BG5 400Mbps 255PBGA, LDS-L9D225G80BG5-B AS4DDR232M72PBG

    AGE T6N 600

    Abstract: AS4DDR232M72PBG
    Text: PRELIMINARY INFORMATION L9D225G80BG5 2.5 Gb, DDR2, 32 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D225G80BG5 400Mbps 255PBGA, LDS-L9D225G80BG5-A AGE T6N 600 AS4DDR232M72PBG

    FBGA DDR3

    Abstract: AS4DDR264M72PBG E-1150 55125C
    Text: PRELIMINARY INFORMATION L9D250G80BG5 5.0 Gb, DDR2, 64 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D250G80BG5 400Mbps 255PBGA, LDS-L9D250G80BG5-A FBGA DDR3 AS4DDR264M72PBG E-1150 55125C

    Untitled

    Abstract: No abstract text available
    Text: 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features


    Original     		PDF MT47H256M4 MT47H128M8 MT47H64M16 18-compatible) 90-Ball 09005aef8117c1b1, 09005aef8117c192

    MT47H32M16

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 512Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H128M4 – 32 MEG x 4 x 4 BANKS MT47H64M8 – 16 MEG x 8 x 4 BANKS MT47H32M16 – 8 MEG x 16 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features


    Original     		PDF 512Mb: 18-compatible) 192-cycle MT47H128M4 09005aef8117c18e, 09005aef80b88542 512MbDDR2 MT47H32M16

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • • Configuration


    Original     		PDF MT47H256M8 MT47H128M16 60-ball 84-ball DDR2-800) DDR2-667) 09005aef8441c566

    Untitled

    Abstract: No abstract text available
    Text: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM SAA128M4. – 32 Meg x 4 x 4 banks SAA64M8. – 16 Meg x 8 x 4 banks SAA32M16. – 8 Meg x 16 x 4 banks For the latest data sheet, please refer to the SpecTek Web site: http://www.spectek.com


    Original     		PDF 512Mb: SAA128M4. SAA64M8. SAA32M16. 18-compatible) 60-ball 10x10mm)

    Untitled

    Abstract: No abstract text available
    Text: PreLIMINARY Information L9D112G80BG4 1.2 Gb, DDR - SDRAM Integrated Module IMOD Benefits FEATURES DDR SDRAM Data Rate = 200, 250, 266, and 333 Mbps Package: • 25mm x 25mm, Encapsulated Laminate Ball Grid array (LBGA), 219 balls, 1.27mm pitch. 2.5V ±0.2V Core Power supply


    Original     		PDF L9D112G80BG4 LDS-L9D112G80BG4-A

    DDR2 x32

    Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-G DDR2 x32 GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 18-compatible) 09005aef8117c187, 09005aef80b12a05 256MbDDR2

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 18-compatible) 09005aef8117c187, 09005aef80b12a05 256MbDDR2

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding 37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V ±0.1V


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 18-compatible) 09005aef8117c187, 09005aef80b12a05 256MbDDR2

    84 FBGA outline

    Abstract: DDR2 x32 5 pin cmos operational amplifier z X6 BP 109 transistor T6N 700 DDR2 SDRAM Meg x 4 x 9 banks 0-30v power DDR2 SDRAM sstl_18 84 FBGA ccd ck
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 MT47H32M8 – 8 Meg x 8 x 4 MT47H16M16 – 4 Meg x 16 x 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V excluding -37V ; -37V VDD = +1.9V ±0.1V, VDDQ = +1.9V


    Original     		PDF 256Mb: MT47H64M4 MT47H32M8 MT47H16M16 18-compatible) 09005aef8117c187, 09005aef80b12a05 256MbDDR2 84 FBGA outline DDR2 x32 5 pin cmos operational amplifier z X6 BP 109 transistor T6N 700 DDR2 SDRAM Meg x 4 x 9 banks 0-30v power DDR2 SDRAM sstl_18 84 FBGA ccd ck

    Untitled

    Abstract: No abstract text available
    Text: 1Gb: x4, x8, x16 – DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/ddr2 Features


    Original     		PDF MT47H256M4 MT47H128M8 MT47H64M16 18-compatible) 09005aef8117c1b1, 09005aef8117c192

    Untitled

    Abstract: No abstract text available
    Text: 22 ChipInductors-1008HTSeries 2520 T h e s e lo w p ro file in d u c to rs a re 4 0 % th in n e r th a n o u r c o n v e n tio n a l 1 0 0 8 b o d y s iz e s . T h e y fe a tu re s ta n d a rd in d u c ta n c e to le ra n c e s o f 5 -1 0 % , h ig h S R F s a n d v e ry h ig h Q.


    OCR Scan     		PDF ChipInductors-1008HTSeries 1008HT-3N3T 1008H T-12N T-15N