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    T4 SM DIODE Search Results

    T4 SM DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    T4 SM DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Application Note 1717 ISL6726EVAL2Z: 24V to 12V 90W Active Clamp Forward DC/DC Converter Introduction Design Specifications The board is a 24V input to 12V output DC/DC converter that can output current up to 7.5A. It is implemented with Intersil’s Active Clamp Forward ACF current-mode PWM controller,


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    ISL6726EVAL2Z: ISL6726. ISL6726, not717 AN1717 PDF

    Untitled

    Abstract: No abstract text available
    Text: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC


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    116-16NO1 116-16N E72873 20101007a PDF

    VUB145-16NOXT

    Abstract: No abstract text available
    Text: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC


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    145-16NO1 E72873 20101007a VUB145-16NOXT PDF

    CT7343

    Abstract: R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A
    Text: SC4910A/B High Performance Secondary Side Controller with Synchronous Rectifier POWER MANAGEMENT Description PRELIMINARY Features K K K K K K K K K K K K The SC4910A/B is an integrated, full featured, secondary side controller designed for use in single ended and


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    SC4910A/B SC4910A/B 8208T 31414R TPS2829 TPS2829DBVR" TSSOP-20 SC4911 CT7343 R0805 sot23-123 10K ohms 0805 package 4910a 4431 mosfet r51 c/4 P8208T SC4910 SC4910A PDF

    P8208T

    Abstract: PA0801 fzt853 MLPQ-12 SC1301A SC431 SC4431 SC4806 SC4806MLTRT sot23-5pin
    Text: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains


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    SC4806 SC4806 MLPQ-12, P8208T PA0801 fzt853 MLPQ-12 SC1301A SC431 SC4431 SC4806MLTRT sot23-5pin PDF

    R1206

    Abstract: PA0801 P8208T gate pulse transformer pa0264 pa0810 fzt853 pe 68386 R20 marking 22N55 SC1301A
    Text: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains


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    SC4806 SC4806 R1206 PA0801 P8208T gate pulse transformer pa0264 pa0810 fzt853 pe 68386 R20 marking 22N55 SC1301A PDF

    pa0810

    Abstract: capacitor 2.2n 0805 1 fzt853 sot23_bec PA0801 C31 MARKING CODE SO8 do213AC P8208T MLPQ-12 SC431
    Text: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains


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    SC4806 SC4806 MLPQ-12, pa0810 capacitor 2.2n 0805 1 fzt853 sot23_bec PA0801 C31 MARKING CODE SO8 do213AC P8208T MLPQ-12 SC431 PDF

    diode MARKING CODE A9

    Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
    Text: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"


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    160-i f-1SS349-- SS181 SS184 SS187 SS190 1SS307 SS193 HN2D01P HN1D01F diode MARKING CODE A9 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking PDF

    lts 542

    Abstract: 1N5B21 FDC37C662 SD14 SMC34C60 QIC-80 piezo driver 1N5B21-1-3
    Text: SM C34C60 SMC PRELIMINARY STANDARD MICROSYSTEMS CORPORATION Parallel Port Interface Chip - Peripheral Side FEATURES Creates PC/AT-Style Bus from Parallel Printer Port Signals Single Chip Interface to Any Bus Capable Peripheral Supports Standard, Bi-Directional, EPP,


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    SMC34C60 16-Bit 0D1122Ã lts 542 1N5B21 FDC37C662 SD14 SMC34C60 QIC-80 piezo driver 1N5B21-1-3 PDF

    1sr154-100

    Abstract: SR154
    Text: 1SR154-100/1SR154-200/1SR154-400 — K /D iodes 1SR15 4 -1 0 0 /1 SR154-200 1SR154-400 ->' a > # * » & » » * if-f * - K Silicon Diffused Junction Rectifying Diodes • irffi \ns[2]/Dimensions Unit : mm) • (P S M )» 2) • Features 1) Sm all surface mount type (PSM ).


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    1SR154-100/1SR154-200/1SR154-400 1SR15 SR154-200 1SR154-400 1SR154-100 1SR154-200 1SR154-400 SR154 PDF

    RX-2C G

    Abstract: marking code rie sot23 em 2860 k2915 MARKING JW SOT-23
    Text: What H E W LET T 1"KM PA C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series F eatures • S urface M ount SOT-23/ SOT-143 P ackage • High D e te c tio n S en sitivity: Description HSMS-2860 Package Lead Code


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    HSMS-2850 HSMS-2860 OT-23/ OT-143 OT-23 5966-0928E, RX-2C G marking code rie sot23 em 2860 k2915 MARKING JW SOT-23 PDF

    1s1555 diode

    Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
    Text: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:


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    1S1553-1S1555 1S1553 1S1554 1S1555 100mA 1s1555 diode silicon diode 151555 silicon diode 1S1555 1s1554 diode 1S1553/1S1555 PDF

    SHINDENGEN DIODE

    Abstract: No abstract text available
    Text: y a I" — y K Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS S2S6M 60V 2A « • T Ì1 5 0 T ; •PnnsM 7 i 7 > i / i S S ! • 1 O 0 U -K ffl j * •S R S S •D c /D c n y i { — 9 •*S . f — Lx, O A » S •a«. RATINGS Absolute Maximum Ratings


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    PDF

    SOT23 6pin MARKING 3F

    Abstract: marking 3f 6pin MBR7535 MBR7545
    Text: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.


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    MBR7535 MBR7545 DO-35 SOT23 6pin MARKING 3F marking 3f 6pin MBR7545 PDF

    MARKING 330D

    Abstract: BD330DW 330D marking iP sot363
    Text: MOTOROLA Order this document by MBD110DWT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies


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    MBD110DWT1/D OT-363 MBD110DW BD330DW MBD770DW 419B-01, OT-363 X43042F-0 MBD110DWT1 MARKING 330D 330D marking iP sot363 PDF

    bgy 53

    Abstract: No abstract text available
    Text: SMCJ5.0 thru SMCJ170CA 1500 Watt Surface Mount TVS TEL: 805-498-2111 DESCRIPTION FEATURES: The SMCJ series of transient voltage suppressors are designed to protect components from transient voltages caused by lightning, electrostatic discharge ESD , electrical fast transients (EFT), inductive load


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    SMCJ170CA MOS-214AB DD0422Ã bgy 53 PDF

    mmsz5v1t1

    Abstract: marking T1 zener u5 MMSZ4702T1
    Text: SOD-123 DEVICES continued Zener Diodes (continued) Cathode = Notch (Vp = 0.9 V Max. @ lF = 10 mA for all types) continued ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted«24», (VF = 0.9 V Max. @ lF = 10 mA for all types) Max Reverse Leakage


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    OD-123 MMSZ4693T1 MMSZ4694T1 MMSZ4695T1 MMSZ4696T1 MMSZ4697T1 MMSZ4698T1 MMSZ4699T1 MMSZ4700T1 MMSZ4701T1 mmsz5v1t1 marking T1 zener u5 MMSZ4702T1 PDF

    DIODE smd marking uh

    Abstract: SMD MARKING XL Diode marking m7 smd m7 smd xl MARKING SMD xl 501Z
    Text: Schottky Barrier Diode Twin Diode m tm m o u tlin e Package : E-pack DE5SC4M Unit I mm Weight 0.326k T yp 40V 5A Feature • SM D • SMD • PRRSMÿ7/ 'C 5 > î/ x < S lI • P brsm Rating 1 High lo Rating-Small-PKG i . V . f'.t f t iJ T yp«* N I ol 5S C4


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    03Z6g 51k-0- J532-1) DIODE smd marking uh SMD MARKING XL Diode marking m7 smd m7 smd xl MARKING SMD xl 501Z PDF

    ixys ml 075

    Abstract: 50N60A
    Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES


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    IXGX50N60AU1 IXGX50N60AU1S 50N60AU1 ixys ml 075 50N60A PDF

    1SS133

    Abstract: No abstract text available
    Text: K /D io d es 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 y U □ > l v 7 f K Silicon Epitaxial Planar High-Speed Switching Diodes • W KTfSIH /Dim ensions Unit : mm 1) S / J 'S » T * S o 2) M i t m & T & Z ' . 3) itS lJ t (trr=2ns Typ.) ? & 5 o


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    1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 1SS133 1SS132 1SS131 1SS133 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 1 M M Ü (^ L6213 SOLENOID DRIVER + SWITCH MODE POWER SUPPLY ADVANCE DATA . • ■ ■ . O PERATING SUPPLY VOLTAGE UP TO 46V 1A POWER SUPPLY (5V 5A SO LENOID DRIVER PRECISE ON CHIP REFERENCE VOLTAGE DISCONTINUO US MODE - FREQUENCY VARIABLE


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    L6213 L6213 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP802C0400A -4 K SCHOTTKY BARRIER DIODE Features • te V F Low VF Super high speed sw itch in g . • w a f t «14 Connection Diagram High reliability by planer design ' Applications High speed p ow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings


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    TP802C0400A) 500ns E3TS30S3^ 95t/R89 PDF

    LIF 10R

    Abstract: No abstract text available
    Text: SIL31 R ( 2 5 o a ) • : Outline Drawings Units mm GEIMERAL-USE RECTIFIER DIODE I Features High reverse voltage capability • Stud mounted Z.M : Applications • ',<‘y r ‘lJ “ ? E ® S Battery chargers • 7 7 -> u x m m m Brush-less generators


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    SIL31 SIL31 50HzIEfè ftftl80" 50HzI 95t/R Shl50 LIF 10R PDF

    Untitled

    Abstract: No abstract text available
    Text: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K /D iod es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 v V =i > 1 $ 3- V T ; u7 °U - j- M M & JS* < "J 3- > ? 2 '< * - KT7 K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays


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    DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 PDF