t3sb60
Abstract: t3sb 60 T3SB T3SB80 T3SB40 Huan Semiconductor
Text: T3SB Series SIP 4-AMPERE SILICON BRIDGE RECTIFIER Mechanical Data FEATURES • • • • • • Low Reverse Leakage Current Surge Overload Rating to 120A Peak Ideal for Printed Circuit Board Applications Epoxy Material – UL Recognition Flammability Classification 94V-0
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MIL-STD-202,
T3SB60
T3SB80
T3SB40
t3sb60
t3sb 60
T3SB
T3SB80
T3SB40
Huan Semiconductor
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DBS101G
Abstract: DBS10XG DBS MARKING CODE 106G DBS107G
Text: DBS101G - DBS107G TAIWAN SEMICONDUCTOR E RoHS Single Phase 1.0 AMR Glass Passivated Bridge Rectifiers DBS COM PLIANCE jM 7 < - « I J 'cuiod'- ' Features <> <> UL Recognized File # E-96005 Glass passivated junction Ideal fo r printed circuit board Reliable low cost construction utilizing m olded
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DBS101G
DBS107G
E-96C05
/0-375n
MIL-STD-202.
DBS107G)
DBS10XG
DBS MARKING CODE
106G
DBS107G
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32r4610a
Abstract: 32R2020R VHZ 454
Text: 0253^5 OGOTBSS böl • SIL SSI 32R2320/21/22/23/24 3V, 5V, 4-Channel 2-Terminal Read/Write Device ¿ m c o n S M fa n s A TDK Group/Company I n fd F m a t io n October 1993 DESCRIPTION FEATURES The SSI 32R2320/21/22/23/24 are BiCMOS monolithic integrated circuit designed for use with twoterminal recording heads. They provide a low noise
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32R2320/21/22/23/24
32R2320/21/22/23/24
i324RW-4CV
32R2324W-4CV
32r4610a
32R2020R
VHZ 454
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aeg thyristors
Abstract: AEG T24F AEG T 51 N 1200 T72F aeg t 388 AEG T 509 N 1600 AEG T 25 N 1100 000130 aeg tt 46 n 1200 955 100 12 LAO
Text: 17E D • D aam ab 0G CH 305 s ■ T '- j i S ’ - o / Thyristoren für selbstgeführte Stromrichter Thyristors for seif-commutated converters Thyristors pour applications fréquence Typ Type Vdrm Vrrm V Itrmsm Itsm t=iOms M= *v max 45°C / ftlt hWM/tc t=1Oms
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Vrm-50
400Hz
aeg thyristors
AEG T24F
AEG T 51 N 1200
T72F
aeg t 388
AEG T 509 N 1600
AEG T 25 N 1100
000130
aeg tt 46 n 1200
955 100 12 LAO
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