ABB TMAX T7
Abstract: TMAX T1D 160 SACE Bergamo ABB Sace Tmax T7D1600 TMAX PV abb ABB TMAX T1 1SDA066887R1 T1D 160 PV 4p F FC Cu 1100 V DC tmax t7
Text: Product note Tmax PV: photovoltaic range T Generation The average generating capacity of photovoltaic installations is increasing every day, in all parts of the world. When it comes to large photovoltaic production installations over 200 kWp , the power installed has continued to increase
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1SDC210031L0202
ABB TMAX T7
TMAX T1D 160
SACE Bergamo
ABB Sace Tmax
T7D1600
TMAX PV abb
ABB TMAX T1
1SDA066887R1
T1D 160 PV 4p F FC Cu 1100 V DC
tmax t7
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T55B
Abstract: T71A t19c t17c t61b t58b t57b T27b t65a T3D 62
Text: 82371AB PCI ISA IDE Xcelerator PIIX4 23.0 Clock, Reset, ISA Bus, X-Bus, and Host Timing Diagrams Figure 41. Clock Timing Period High Time PCICLK, SYSCLK, OSC 2.0V 0.8V Low Time Fall Time Rise Time Figure 42. Reset Inactive Timing SUS_STAT[1:2]# t2f PCIRST#, RSTDRV
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82371AB
IRQ13
IRQ12/M,
T55B
T71A
t19c
t17c
t61b
t58b
t57b
T27b
t65a
T3D 62
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KAI-04022
Abstract: KAI-04022-ABA-CD-BA PS-1062 KAI-04022-AAA
Text: KAI-04022 IMAGE SENSOR 2048 H X 2048 (V) INTERLINE CCD IMAGE SENSOR JUNE 22, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0015 KAI-04022 Image Sensor TABLE OF CONTENTS Summary Specification . 6
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KAI-04022
PS-0015
D263T
PS-0015
KAI-04022-ABA-CD-BA
PS-1062
KAI-04022-AAA
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ntc thermistor h2
Abstract: 6d222 5D2-18 NTC Thermistor 120 Ohm D207 NTC 10010 8D2-18 8d218 thermistor 160 c thermistor 5 ohm
Text: POWER THERMISTOR The POWER THERMISTOR is a device for suppressing inrush current to an electric circuit. Circuits including electric bulbs or capacitors induce a inrush current more than 100 times the normal current when the circuit switch is turned on. The POWER
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D2-07
D2-10
D2-14
D2-05
D2-08
D2-11
D2-13
ntc thermistor h2
6d222
5D2-18
NTC Thermistor 120 Ohm
D207
NTC 10010
8D2-18
8d218
thermistor 160 c
thermistor 5 ohm
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-4011 KODAK KAI-4011M KODAK KAI-4011CM Image Sensor 2048 H x 2048 (V) Interline Transfer Progressive Scan CCD July 15, 2005 Revision 1.1 KAI-4011 Series Rev 1.1 www.kodak.com/go/imagers 585-722-4385
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KAI-4011
KAI-4011M
KAI-4011CM
KAI-4011
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KAI-4021
Abstract: No abstract text available
Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-4021 KODAK KAI-4021M KODAK KAI-4021CM Image Sensor 2048 H x 2048 (V) Interline Transfer Progressive Scan CCD July 15, 2005 Revision 1.1 KAI-4021 Series Rev 1.1 www.kodak.com/go/imagers 585-722-4385
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KAI-4021
KAI-4021M
KAI-4021CM
KAI-4021
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Untitled
Abstract: No abstract text available
Text: KAI-4011 IMAGE SENSOR 2048 H X 2048 (V) INTERLINE CCD IMAGE SENSOR JUNE 9, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-00106 KAI-4011 Image Sensor TABLE OF CONTENTS Summary Specification . 6
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KAI-4011
PS-00106
D263T
PS-0016
PS-0016
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KAI-4020M
Abstract: KAI-4020 ccd KE DIODE T3D 46 diode KAI-4020CM SMR 4020 T3D 54 DIODE Diode T3D 54 T3D 53 40MHZ
Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-4020 KODAK KAI-4020M KODAK KAI-4020CM Image Sensor 2048 H x 2048 (V) Interline Transfer Progressive Scan CCD December 16, 2003 Revision 2.0 KAI-4020 Series Rev2.0 www.kodak.com/go/imagers
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KAI-4020
KAI-4020M
KAI-4020CM
KAI-4020
KAI-4010
KAI-4020M
ccd KE DIODE
T3D 46 diode
KAI-4020CM
SMR 4020
T3D 54 DIODE
Diode T3D 54
T3D 53
40MHZ
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kai-4021
Abstract: NSPG500 KAI-4021M KAI4021M KAI-4021-ABA-CD-BA KAI-4021-AAA-CR-AE KAI-4021-ABA
Text: KAI-4021 IMAGE SENSOR 2048 H X 2048 (V) INTERLINE CCD IMAGE SENSOR JUNE 22, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0014 KAI-4021 Image Sensor TABLE OF CONTENTS Summary Specification . 6
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KAI-4021
PS-0014
D263T
PS-0014
NSPG500
KAI-4021M
KAI4021M
KAI-4021-ABA-CD-BA
KAI-4021-AAA-CR-AE
KAI-4021-ABA
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Untitled
Abstract: No abstract text available
Text: TUSONIX TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D 225/571 275/6 99 344/8 74 420/10 67 475/12.07 .575/1481 .655/16 64 720/18 29 L E A D S P A C IN G (S ) 200/508 250/635 .250/6.35 250/635 250/6.35 375/952 375/9.52
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N2200
N4700
NS600
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t3d 66
Abstract: T3D 64 737 s1g t3d 29 T3D 90
Text: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE
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N2200
N3300
N4200
N4700
N5600
t3d 66
T3D 64
737 s1g
t3d 29
T3D 90
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Untitled
Abstract: No abstract text available
Text: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952
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N4200
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Untitled
Abstract: No abstract text available
Text: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7
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Untitled
Abstract: No abstract text available
Text: TUSONIS TUSONIX STYLE NUMBER 865 835 M A X I M U M D I A M E T E R D . 225 / 5.71 2 7 5 /6 9 9 .3 4 4 /8 L E A D S P A C I N G (S) 2 00 / 5.08 2 50 / 6.35 22 22 W IR E G A U G E (A W G ) N T E TEM P. CHAR. CODE Z5 D Y5E X5F X7F M IN CAP TO L (%) M IN TC
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N220Q
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 S P R A GU E. ^3 Ô513S5G Û0D3S77 2 D S E M I C O N D S / ICS 93 D 03 577 If^ T-âl-îo BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type fT 500
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513S5G
0D3S77
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Untitled
Abstract: No abstract text available
Text: W ie tm v i V 1 U a W ill A DISC CERAMIC CAPACITORS TUSONIX STYLE NUMBER 861 831 801 M A X IM U M 2 3 5 / 5.96 2 9 0 /7 37 .3 6 0 / 9.14 2 0 0 /5 00 . 2 50 /6 2 5 0 /6 35 . 250 / 6.35 250 / 6 . : 5 . 3 75 / 9.52 22 22 22 22 D IA M E T E R D L E A D S P A C IN G (S)
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JEDEC bga 63 tray
Abstract: T3D 63
Text: 3 2 1 D D * 28.1 [ T ^ > i 30. Il j-jv ^ 190-0 0.6 i 0.03 ( 5.73 ) 00.1X2 Y2 [ 4 > ( 6 . 73) /n p | OQQOQOÇiÇXpOQOOQi fc= 19 17 15 13 11 9 7 5 3 20 18 16 14 12 10 8 6 4 2 h H b 20.1 i 0.5 key c o n f i g u r a t i o n R 4il i revised R e c o m m e n d e d P CB F o o t p r i nt
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ETAD-F0347
DIS-F-004000
EDC3-157285-02
CL636-0013
CL636-0013-1-57
JEDEC bga 63 tray
T3D 63
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T3D 34
Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Text: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in
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N1500
1B11R17
T3D 34
T3D 67
T3D 87
t3d 99
T3D 79
t3d 96
T3D 64
T3D 63
Tusonix
u1g 007
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Untitled
Abstract: No abstract text available
Text: C jT O fc D 124-Position 4 x 6 Header 2> ^ l£) I <£><N I nimni in n ii_ in m i niinii. Ä] 7] (7 7 7 7 7 7 ^ ^ [• 86 (3.386) iH m n II U U II U U 24 (HD Ti ADD U U II II U II II U U 11 Ü II II 1918 13 12 7 U U II II II II 6 F 1 contact No. 75.82 (2.985)
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124-Position
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BCW71 AG
Abstract: No abstract text available
Text: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A
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flS13
G003L
BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW65A
BCW71 AG
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TMPT404
Abstract: No abstract text available
Text: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEtllCOND 8514019 SPRAGUE, G R OU P 13 T> • SEMICONDS/ IC S Ö513ÖSD GGGaSbT 93D 0 3 5 6 9 2>^ r - â 3 - i ■ - BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TÄ = 25°C DC Current Gain Ic ß O
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THBC317B
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N SD1490 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 470 - 860 MHz 28 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION
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SD1490
SD1490
Q07Q55b
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T3D 34
Abstract: No abstract text available
Text: High-reliability capacitors WIMA Snubber Cap High performance IGBT-snubber capacitors • Low inductive construction with end-surface contacts. ■ Double-sided metallization for high pulse ratings. ■ Low-loss polypropylene dielectric. ■ Internally series connected for high
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