Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 0402 Package Chip LED 0.35mm Height 16-216/T3D-AQ1R2TY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.
|
Original
|
PDF
|
16-216/T3D-AQ1R2TY/3T
DSE-0002566
05-Jul-2011
|
Untitled
Abstract: No abstract text available
Text: Technical Data Sheet White Chip LED With Right Angle Lens 48-213/T3D-AP1Q2TY/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.
|
Original
|
PDF
|
48-213/T3D-AP1Q2TY/3C
DSE-0005372
05-Jul-2011
|
Untitled
Abstract: No abstract text available
Text: Technical Data Sheet White Chip LED With Right Angle Lens 48-213/T3D-AP1Q2TY/3C Features Package in 8mm tape on 7 diameter reel. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. Mono-color type.
|
Original
|
PDF
|
48-213/T3D-AP1Q2TY/3C
DSE-0005372
05-Jul-2011
|
Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 0603 Package Chip LED 0.2mm Height 19-219/T3D-AQ2R2TY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.
|
Original
|
PDF
|
19-219/T3D-AQ2R2TY/3T
DSE-0005383
05-Jul-2011
|
T3D 55
Abstract: 07E-07
Text: ALLEGRO MICROSYSTEMS INC T3D D • 0504336 0003713 S ■ ALGR PROCESS SKL Process SKL NPN Small-Signal Transistor The S K L Process produces double-diffused, NPN silicon epitaxial planar transistors intended for use in general-purpose amplifier or switching applications
|
OCR Scan
|
PDF
|
050433ft
3jg32
T3D 55
07E-07
|
Untitled
Abstract: No abstract text available
Text: ALLEGRO NICROSYSTEMS INC T3D J> U 0504330 0003715 H • ALCR PRO CESS SLL Process SLL PNP Small-Signal Transistor Process SLL is a double-diffused epitaxial planar PNP silicon device. It is designed for use in generalpurpose amplifier and switching applications. Its
|
OCR Scan
|
PDF
|
|
A1396
Abstract: No abstract text available
Text: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper
|
OCR Scan
|
PDF
|
05G433A
1000mA
00090sa
A1396
|
T3D 67 diode
Abstract: t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100
Text: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated
|
OCR Scan
|
PDF
|
50-60Hz
T3D 67 diode
t3d diode
BS6301
EFT 377 A
LOA21
T3D 67
T3D 80 diode
BS415
BS7002
LDA100
|
E76270
Abstract: T3D 67 diode t3d diode transistor c 2500 BS415 BS6301 BS7002 LDA100 LDA101 LDA110
Text: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated
|
OCR Scan
|
PDF
|
50-60Hz
E76270
T3D 67 diode
t3d diode
transistor c 2500
BS415
BS6301
BS7002
LDA100
LDA101
LDA110
|
lc 945 transistor
Abstract: transistor LC 945 2N3904 2N3904 F14 4102 transistor 2n3904 TRANSISTOR PNP transistor 4103
Text: ALLE&RO N I C R OSYSTEMS INC T3D » 0504330 0003733 0 • AL6R PROCESS TVO Process TVO NPN High-Speed Switching Transistor Process TVO is an NPN double-diffused silicon epitaxial planar device with gold diffusion. It is used as a general-purpose switch and amplifier. The PNP
|
OCR Scan
|
PDF
|
|
501C
Abstract: No abstract text available
Text: CLARE CP Ciane C P / S OL I ] ) STATE bbE D H E mM 'i D M DDOOPGfl T3D • C P C L Clirreilt SenSOrS Solid State Products Division CORPORATION Solid State Current Sensors DESCRIPTION CP Clare's LDA series solid state current sensors provide an optically isolated
|
OCR Scan
|
PDF
|
contains750
50-60HZ
501C
|
T3D+53
Abstract: t3d 05 T3D 53
Text: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type
|
OCR Scan
|
PDF
|
PSD51
PSD54
PSH81
PSL51
O-226AA/STYLE
T3D+53
t3d 05
T3D 53
|
T3D DIODE
Abstract: T3D 45 diode diode T3D diode T3D 25 T3D 40 DIODE Diode T3D 08 T3D 18 diode T3D 77 diode Diode T3D 30 Diode T3D 35
Text: S P RAG UE /S EM IC ON D GROUP 8 5 14019 SPRAGUE, D • S E M I C O N D S / ICS 0513550 0003b27 S 93 D 0 3 6 2 7 SMALL-OUTLINE DIODES i ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type »rr Max. ns
|
OCR Scan
|
PDF
|
0003b27
TMPD459
TMPD914
TMPD2835
TMPD2836
TMPD2837
TMPD2838
TMPD4148
TMPD4150
TMPD4153
T3D DIODE
T3D 45 diode
diode T3D
diode T3D 25
T3D 40 DIODE
Diode T3D 08
T3D 18 diode
T3D 77 diode
Diode T3D 30
Diode T3D 35
|
Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A
|
OCR Scan
|
PDF
|
THD457
THD458A
THD459
THD459A
THD462
THD485
THD485B
THD550
THD645
THD914
|
|
|
T4A 392
Abstract: T5A 392 T3D 89 392 t4a t3d 18 101T3DW105KR4CT
Text: JOHANSON m www.johansondielectrics.com H ig h T e m p e r a t u r e R a d ia l L e a d e d C a p a c it o r s K ey F eatures -jujhuni 1— mti • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill
|
OCR Scan
|
PDF
|
|
OPF300
Abstract: LW khz receiver OPF500 OPF510 QPF500 QPF510 850 nm LED
Text: OPTEK Product Bulletin OPF500 February 1996 M i ^7^0500 0D0EÔ2G Obô H 200kbps Fiber Optic Receiver Type OPF5QO, OPF51Q Series Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Interfaces with all logic circuits • Two output options
|
OCR Scan
|
PDF
|
OPF500
200kbps
OPF500,
OPF51Q
OPF510
OPF300
QPF500,
QPF510
LW khz receiver
OPF500
QPF500
850 nm LED
|
Untitled
Abstract: No abstract text available
Text: SP R AG UE /S EN IC ON D GROUP 8514019 SPRAGUE. ‘IB D • 0513050 G0D3573 5 ■ SEM ICONDS/ ICS 93D 0 3573 BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C ^CE sal DC Current Gain 'cBO fr (V) (V) (nA)
|
OCR Scan
|
PDF
|
G0D3573
|
T3D 35 zener DIODE
Abstract: T3D zener DIODE t3d 99 diode diode zener t3d 23 T3D 91 DIODE T3D 95 Diode T3D 82 T3D 65 diode T3D 82 diode ZENER DIODE T3D
Text: SPR AGU E/SENIC OND GROUP 8 5 1 4 0 1 9 SPRAGUE. 13 D • 0513050 0003b54 7 ■ 93D 0 3624 I S E M I C O N D S /ICS DIODE CHIPS T H Z ’ S eries ‘W Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C Device Type Min. V Nom. (V) Max. (V) («Iff (mA)
|
OCR Scan
|
PDF
|
0003b54
T3D 35 zener DIODE
T3D zener DIODE
t3d 99 diode
diode zener t3d 23
T3D 91
DIODE T3D 95
Diode T3D 82
T3D 65 diode
T3D 82 diode
ZENER DIODE T3D
|
BCW71 AG
Abstract: No abstract text available
Text: SPRAGUE/SEfllCOND GR OU P 8514019 SPRAGUE. TB flS13ñSQ G003L.05 B D SE M IC O N D S/ IC S 93D 0 3 6 0 51>" SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELEC TR IC AL CHARACTERISTICS at Tfl = 25°C IcBO BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A
|
OCR Scan
|
PDF
|
flS13
G003L
BCW31
BCW32
BCW33
BCW60A
BCW60B
BCW60C
BCW60D
BCW65A
BCW71 AG
|
2N5219
Abstract: 2N5136
Text: SPRAGUE/SEMICOND GROUP 8514019 13 SPRAGUE. » • 0513050 GGQ3SÖÖ 7 ■ SEM ICONDS / IC S 93D 03588 3> PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘T P ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device Type TP5131 TP5132
|
OCR Scan
|
PDF
|
1flS13fiSQ
O-226AA/STYLE
2N5219
2N5136
|
Untitled
Abstract: No abstract text available
Text: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type
|
OCR Scan
|
PDF
|
TP3994
TP4381
TP5018
TP5019
TP5020
TP5021
TP5033
TP5114
TP5115
TP5116
|
TMPT404
Abstract: No abstract text available
Text: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A
|
OCR Scan
|
PDF
|
|
PSA77C
Abstract: PS6535C
Text: SP RA GU E/ SENIC OND GROUP 8 5 1 4 0 1 9 SPRA G U E , i3 D • 0513050 Q00357M 7 ■ S E M IC O N D S / IC S 93D 7 "-" & 7 03574 ^ BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘MPS’ Device Types ELECTRICAL C HA R A C T ER IST IC S at TA = 25°C DC Current Gain
|
OCR Scan
|
PDF
|
Q00357M
PSA77C
PS6535C
|
Untitled
Abstract: No abstract text available
Text: A COMPANY O r MODEL LPTJ3 Toroidal Inductor Surface Mount High Current FEATURES TYPICAL APPLICATIONS • Surface Mounted • /ride range of inductance and current ratings • Toroid design reduces EMI • Low Profile • Switching power suoplies • EMI/RFI Altering
|
OCR Scan
|
PDF
|
MIL-S7D202.
ML-STD-202.
MIL-STD-202.
CCNNEC750
LPTJ3-1-10
-eosis6s-330T
|
