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    T3125 Search Results

    T3125 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74FST3125PG8 Renesas Electronics Corporation 4-BIT BUS SWITCH Visit Renesas Electronics Corporation
    74FST3125SO8 Renesas Electronics Corporation 4-BIT BUS SWITCH Visit Renesas Electronics Corporation
    74FST3125Q Renesas Electronics Corporation 4-BIT BUS SWITCH Visit Renesas Electronics Corporation
    74FST3125Q8 Renesas Electronics Corporation 4-BIT BUS SWITCH Visit Renesas Electronics Corporation
    74FST3125PG Renesas Electronics Corporation 4-BIT BUS SWITCH Visit Renesas Electronics Corporation
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    T3125 Price and Stock

    Texas Instruments SN74CB3T3125RGYR

    IC BUS SWITCH 1 X 1:1 14VQFN
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    DigiKey SN74CB3T3125RGYR Cut Tape 3,937 1
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    SN74CB3T3125RGYR Digi-Reel 3,937 1
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    SN74CB3T3125RGYR Reel 3,000 3,000
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    Mouser Electronics SN74CB3T3125RGYR 1,877
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    Bristol Electronics SN74CB3T3125RGYR 359
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    Chip1Stop SN74CB3T3125RGYR Cut Tape 447
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    Win Source Electronics SN74CB3T3125RGYR 15,800
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    Texas Instruments SN74CBT3125PWR

    IC BUS SWITCH 1 X 1:1 14TSSOP
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    DigiKey SN74CBT3125PWR Cut Tape 2,811 1
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    Bristol Electronics SN74CBT3125PWR 4,281
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    SN74CBT3125PWR 240 7
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    SN74CBT3125PWR 19
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    Ameya Holding Limited SN74CBT3125PWR 2,000
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    Win Source Electronics SN74CBT3125PWR 10,300
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    onsemi FST3125MTCX

    IC BUS SWITCH 1 X 1:1 14TSSOP
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    DigiKey FST3125MTCX Reel 2,500 2,500
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    Chip1Stop FST3125MTCX Cut Tape 15
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    Flip Electronics FST3125MTCX 2,500
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    Texas Instruments SN74CBT3125DR

    IC BUS SWITCH 1 X 1:1 14SOIC
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    DigiKey SN74CBT3125DR Cut Tape 2,365 1
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    Bristol Electronics SN74CBT3125DR 56,810
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    SN74CBT3125DR 4,220
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    Rochester Electronics SN74CBT3125DR 328 1
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    Chip 1 Exchange SN74CBT3125DR 2,480
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    Texas Instruments SN74CBT3125CDR

    IC BUS SWITCH 1 X 1:1 14SOIC
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    DigiKey SN74CBT3125CDR Cut Tape 2,177 1
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    SN74CBT3125CDR Digi-Reel 2,177 1
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    Mouser Electronics SN74CBT3125CDR 10,335
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    T3125 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T-312-500M2 American Electrical Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 2POS SIDE ENTRY 5MM PCB Original PDF
    T-312-500M3 American Electrical Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 3POS SIDE ENTRY 5MM PCB Original PDF
    T-312-508M2 American Electrical Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 2P SIDE ENT 5.08MM PCB Original PDF
    T-312-508M3 American Electrical Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 3P SIDE ENT 5.08MM PCB Original PDF

    T3125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EMI FILTER 15A

    Abstract: No abstract text available
    Text: • VSBU-120-T3125B Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal


    Original
    PDF VSBU-120-T3125B VSBU-120-T3125B 12VDC CISPR-22 part-15 500VDC 220VAC EMI FILTER 15A

    VSUU-120-T3125A

    Abstract: No abstract text available
    Text: • VSUU-120-T3125A Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal


    Original
    PDF VSUU-120-T3125A VSUU-120-T3125A 12VDC CISPR-22 part-15 500VDC 220VAC

    VSUU-120-T3125A

    Abstract: No abstract text available
    Text: • VSUU-120-T3125A Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal


    Original
    PDF VSUU-120-T3125A VSUU-120-T3125A 12VDC CISPR-22 part-15 500VDC 220VAC

    Untitled

    Abstract: No abstract text available
    Text: • VSBU-120-T3125A Open Frame Switching Power Supply Features •Universal Input Voltage 90-264 VAC, 47-63 Hz ·Internal EMI filter ·Input connector mates with Molex housing 09-50-3051 and Molex 2878 series crimp terminal ·Output connector mates with Molex housing 09-50-3061 or 09-503081, or 09-50-3131 and Molex 2878 series crimp terminal


    Original
    PDF VSBU-120-T3125A VSBU-120-T3125A 12VDC CISPR-22 part-15 500VDC 220VAC

    Untitled

    Abstract: No abstract text available
    Text: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000


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    PDF T-31-25 SD2204 O-220AA SD2204CHP SD2204BD -400V, -500pA SD1201 -400V OT-143)

    2SK543

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP SSE D 7*n7Q7b OOObTSO 2SK543 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)


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    PDF 2SK543 1791C 100MHz) 035pF 100uA 2SK543

    s2e transistor

    Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065
    Text: SANYO S E M I C O N D U C T O R 2SK1065 TTTTOTb ÜOOhTb? 2 SSE D CORP T - 3 1 ‘2 5 # N-Channel'Junction Silicon FET 2057 High-Frequency General-Purpose Amp Applications 2746 Features • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer


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    PDF 2SK1065 2SK1065-applied s2e transistor S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065

    SOT103

    Abstract: transistor SOT103 mosfet BF902 marking C1s philips mosfet
    Text: P H ILIP S INTER NATIONAL 41E D B 7110â2b OQEtfl'ÎS T « ¡P H IN T-31-25 Philips S em iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES • • BF902 QUICK REFERENCE DATA Short channel transistor with high ratio IYtsl:Cls


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    PDF T-31-25 BF902 -SOT103 SOT103 transistor SOT103 mosfet BF902 marking C1s philips mosfet

    Untitled

    Abstract: No abstract text available
    Text: HARRIS H li S E M I C O N D U C T O R 4bE D • 43022^ 00D0213 T ■HMS 1 = 3 1 -3 0 SI HARRIS H M F -0 6 14 0 200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz * Chip Devices are Selected from


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    PDF 00D0213 HMF-06140-200 HMF06100-200.

    BU 2058

    Abstract: 2SK932 OT100 transistor R3125
    Text: SANYO SEMICONDUCTOR CORP SSE D 7TT707t 2SK932 000 3=1130 T T - J /- Z 5 N -C h an n el Junction Silicon FET 2050 High-Frequency Low-Noise Amp Applications 2841 A p p lic a tio n s • AM tu n e r RF am p, low-noise am p F e a tu re s • Adoption of FBET process


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    PDF 7eH707b 2SK932 r-31-25 2SK932-applied BU 2058 2SK932 OT100 transistor R3125

    2SK1229

    Abstract: 2ROPT
    Text: l— 2SK1229 — - Preliminary SIE D • 44^205 DOIITÔT T06 ■ H I T 4 GaAsN-Channel HEMT ■ OUTLINE DRAWING SHF Converter RF Amplifier HITACHI/ OPTOELECTRONICS ■FEATURES • Low Noise, High Gain


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    PDF 2SK1229 12GHz) 2SK1229 2ROPT

    sony 0642

    Abstract: No abstract text available
    Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron


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    PDF 2SK677H5 2SK677H5 D0G312b sony 0642

    Untitled

    Abstract: No abstract text available
    Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S


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    PDF fl23b320 Q62702-F964 Q62702-F1021 23b320

    2SK543

    Abstract: transistor fet 2062
    Text: SANYO SEMICONDUCTOR 2SK543 CORP SSE D 7*n7Q7b OOObTSO 7 T-31-ZS ♦ N -C h an n el M O S Silicon FET 2024A FM Tuner, VHF-Band Amp Applications 1791C Features . Low noise. NF=1.8dB typ f=100MHz • High power gain. PG=27dB typ(f=100MHz) . Small reverse transfer capacitance. cras=0.035pF(VDS=10V,f=1MHz)


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    PDF 2SK543 1791C 100MHz) 035pF 2SK543 transistor fet 2062

    avantek

    Abstract: Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100 ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator
    Text: AVANTEK INC 2GE D • limihb 0GGb544 ATF-13100 2-18 GHz Low Noise Gallium Arsenide FET =1 ' -3.NZS Avantek Chip Outline Features • • • Low Noise Figure: 1.1 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB


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    PDF 0GGb544 ATF-13100 ATF-13100 recommende63 avantek Avantek amplifier 140 2-18 GHz Low Noise Gallium Arsenide FET AVANTEK transistor ATF-13100-GP3 ATF 351 Avantek amplifier 167 Avantek Amplifier AVANTEK oscillator

    NE32184A

    Abstract: NE32100 NE32183A nec ne3 INE32184A
    Text: NE C/ CALIFORNIA 3QE D tiMSTMlM Ü0Ü20SM fl • NECC 7 r .j/-z r r ULTRA LOW NOISE K-BAND HETRO JUNCTION FET NE32100 NE32183A NE32184A OUTLINE DIMENSIONS FEATURES • SUPER LOW NOISE FIGURE: NF = 1.0 d B T Y P a tf = 12 GHz NE32100 CHIP • HIGH ASSOCIATED GAIN:


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    PDF bM27M14 0G205M NE32100 NE32183A NE32184A NE321 associat105 34-6393/FAX S88-0279 NOT1CE-1848 NE32184A NE32100 NE32183A nec ne3 INE32184A

    SD303

    Abstract: SD303CHP SD303DC
    Text: TOPAZ SEMICONDUCTOR OSE D g TOfiSSEb O G a i D n □ | T -31-25 e sa S S 303 S E M IC O N D U C T O R N-CHAMNEL EMNANClEVIENT-^ODe DUAL ATE D-MOS FET ORDERING INFORMATION SD303CHP SD303DC SD303DC/R Sorted Chips In Carriers TO-52,4 Lead Package Shorting Rings


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    PDF T-31-25 SD303CHP SD303DC SD303DC/R 500MHz 000GHz 995GHz SD303 SD303CHP SD303DC

    MGF1501

    Abstract: lt 6249 IC TL 0841 2sc 1416 y A2SC
    Text: MITSUBISHI {DISCRETE SC> DE Jfc.24,:iûa,:ï GDlOObM 5 M IT SU B ISH I SEMICONDUCTOR <GaAs FET> M G F1501 FOR L O W -N O ISE A M P L IF IE R S D U AL-G ATE N -CH AN N EL S C H O T T K Y -B A R R IE R -G A T E T Y P E 624 9 82 9 MITSUBISHI DISCRETE SC DESCRIPTION


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    PDF F1501 T-31-25 MGF1501 lt 6249 IC TL 0841 2sc 1416 y A2SC

    T-31-25

    Abstract: VG 10 SAMSUNG KSK211
    Text: SAMSUNG SEMICONDUCTOR INC IfE D | 7 ^ 1 4 2 00D7Q11 7 | Under Development KSK211 SILICON N-CHANNEL JUNCTION FET , T-31-25 FM TUNER VHF AMPLIFIER S O T -2 3 • NF = 2.5 dB TYP • IY fsI = 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic


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    PDF KSK211 T-31-25 OT-23 KSK211 1b4142 T-31-25 VG 10 SAMSUNG

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK S GE INC 0AVANTEK i m D m 000bS77 H ATF-26150 AT-10650-1 2-16 GHz Gênerai Purpose' Gallium Arsenide FET - T - 3.I-2S Avantek 50 mil Package Features • • • • Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz


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    PDF 000bS77 ATF-26150 AT-10650-1) high43

    ATF-26100

    Abstract: AVANTEK transistor
    Text: A V A N T E K INC AVAN TEK 2GE D . • limibt 0QDb574 7 ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide F E T I - 3 I-Z 5 Avantek Chip Outline Features • • • Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz


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    PDF 0QDb574 ATF-26100 AT-10600) ATF-26100 AVANTEK transistor

    S parameters for ATF 10136

    Abstract: AVANTEK transistor Avantek atf-1323
    Text: AVANTEK E GE INC D 0AVANTEK im n tb 0D0kiS35 a ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET T'K-^S" Features • • • • • • Avantek 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V , I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


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    PDF ATF-10136 0D0kiS35 31O-371-0717or31O-371-8478 S parameters for ATF 10136 AVANTEK transistor Avantek atf-1323

    Avantek S

    Abstract: Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323
    Text: A V A N T E K INC 2QE T> 0AVANTEK lllllbt M ATF-13736 2-16 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • • • • • ODGbSS? 7 High Associated Gain: 9.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi dB


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    PDF ATF-13736 CA95C54 Avantek S Avantek, Inc AVANTEK transistor ATF13736TR1 Avantek atf-1323

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC Ot.E D im n b t. OGGSibt. ATF-10235 2-12 GHz Low Noise Gallium Arsenide FET 0AVANTEK Ö | T-31-25 Avantek micro-X Package Features • Low Noise Figure 0.8 dB typical at 4 GHz • Low Bias V d s = 2V, lDs =20 mA • High Associated Gain 13.0 dB typical at 4 GHz


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    PDF ATF-10235 T-31-25