ahr 23
Abstract: No abstract text available
Text: I N T E G R A T E » DE VI CE böE D • HIGH-SPEED 16Kx 16 DUAL-PORT STATIC RAM 4A2 S 77 1 O D I M I? ? nt ■ PRELIMINARY IDT7026S/L Integrated Device Technology, Inc FEATURES: multiplexed bus compatibility IDT7026 easily expands data bus width to 32 bits or
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IDT7026S/L
35/45/55/70ns
25/35/45/55ns
IDT7026S
750mW
IDT7026L
IDT7026
DT7026S/L
MIL-STD-883,
ahr 23
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max8021
Abstract: 690a max690a
Text: 19-4333; Rev2:4/93 Microprocessor Supervisory Circuits JFeatures ♦ Precision Supply-Voltage Monitor: 4.65V for MAX690A/MAX802L/MAX805L 4.40V for MAX692A/MAX802M These parts provide four functions: ♦ Battery-Backup Power Switching 1 A reset output during power-up, power-down, and
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MAX690A/MAX692A/MAX8021/MAX802M/MAX805L
MAX805LMJA
MAX805L
MIL-STD-883.
max8021
690a
max690a
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7M206S120
Abstract: No abstract text available
Text: IDT7M205S IDT7M206S 8KX9&16KX9 CEMOS PARALLEL IN-OUT FIFO MODULE Integrated Device Technology» Inc. FEATURES: • • ■ • ■ • • • • • • First-In/First-Out memory module 8K x 9 organization IDT7M205S 16K x 9 organization (IDT7M206S)
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16KX9
IDT7M205S
IDT7M206S
IDT7M205S)
IDT7M206S)
IDT7M205S/206S
IDT7203
IDT7204
205S/206S
8K/16K
7M206S120
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inmos T414
Abstract: IMS T414 Transputer T414 IMST414 T414 inmos transputer reference manual transputer 7FFFFF84 22FC
Text: INMOS CORP 10E D | 4aG2b0fl 00G33S0 3 1 Ö nm oS C h a p te r 4 T - ^ ? -/7 -5 7 9 IMS T414 engineering data 107 Powered by ICminer.com Electronic-Library Service CopyRight 2003 IN M O S CORP "T-Vf-/7 * £ 7 40 02 1, 68 0 0 0 3 3 5 1 I I s I
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T-47-/7-5
00D33S1
Link123Special
inmos T414
IMS T414
Transputer T414
IMST414
T414
inmos transputer reference manual
transputer
7FFFFF84
22FC
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Untitled
Abstract: No abstract text available
Text: jvwvyLwvx 19-4334; Rev. 5; 9/95 Low -C ost, fiP Supervisory C ircuits F e a tu re s The MAX705-MAX708/MAX813L m icroprocessor pP supervisory circuits reduce the complexity and number of components required to monitor power-supply and battery functions in |jP systems. These devices signifi
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MAX705-MAX708/MAX813L
MAX705/MAX706/MAX813L
200ms
MAX793R/S/U/T
MAX794
MAX795R/S/U/T
MAX800L/M
MAX801L/N/M
MAX802L/M/R/S-T
MAX1232
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55D8
Abstract: circuit diagram for je 182 g DG181 DG180 DG180-191 DG182 DG183 DG184 DG185 DG186
Text: Intersil Hlgh-Rellabllity Products DG180-191 U High Reltfnnfy High-Speed Driver qV ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analoggates consist of 2 or 4 N-channel junction-type field-effect transistors JFET) designed to function as electronic switches. Level-shifting
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DG180-191
DG180
DG191
10MHz,
SPDT-DG186/187/188
DG186/187/188
DPST-DG183/184/185
DG183/184/185
DG189/190/191
55D8
circuit diagram for je 182 g
DG181
DG180-191
DG182
DG183
DG184
DG185
DG186
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Untitled
Abstract: No abstract text available
Text: 22EDI EDI8C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit SRAM 128Kx32 CMOS High Speed Static RAM Features The EDI8C32128C, a high speed, high performance, four megabit density Static RAM organized as 128Kx32 bits, contains four 128Kx8 SRAMs mounted in a package.
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22EDI
EDI8C32128C
128Kx32
EDI8C32128C,
128Kx32
128Kx8
EDI8C32128C
040x45Â
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siemens modules GR 60 48 V 120 A
Abstract: CDC2510A siemens GR 60 48 V
Text: 3.3V 168 pin Registered SDRAM Modules 64MB, 128MB, 256MB & 512MB Density HYS72V8200GR-8 HYS72V8201GR-8 HYS72V16200GR-8 HYS72V32200GR-8 HYS72V32201 GR-8 HYS72V64200GR-8 Preliminary Information Rev. 1.0 • 168 Pin JEDEC Standard, Registered 8 Byte Dual-ln-Line SDRAM Module
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128MB,
256MB
512MB
HYS72V8200GR-8
HYS72V8201GR-8
HYS72V16200GR-8
HYS72V32200GR-8
HYS72V32201
HYS72V64200GR-8
HYS72Vx200
siemens modules GR 60 48 V 120 A
CDC2510A
siemens GR 60 48 V
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inmos transputer C011
Abstract: imsc011
Text: IN MO S CORP IDEI D | 4ñ05tiññ OO^ti^g 1 j[ te m o s_ Chapter - 3 ' ¿ - Q 3 • IMS C011 engineering data 249 INflOS CORP T-J?2.-33~03 250 1 i a E ; j I MflOSböö D Q 0 3 Î H 3
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X2816
Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
Text: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,
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tws 418
Abstract: 16384-WORD
Text: HM100494 Series 16384-word x 4-bit Fully Decoded Random Access Memory Description The HM100494 is E C L 100K compatible, 16384-word by 4-bits read/write random access memory developedforhigh speed systems such as scratch pads and control/buffer storage. Features
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HM100494
16384-word
100494F-I0
100494F-12
28-pin
DG-28N)
tws 418
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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inmos t212 transputer
Abstract: inmos transputer reference manual series T212 data IMST212 INMOS 0D0341C Inmos T212
Text: INHOS CORP GOUriOS • 10E D I Chapter 5 4fl05baa 0DD3M0fl fl | j 'T - ¥ 1 - / 7 - S ’ / IMS T212 engineering data 165 INMOS CORP 7- W -/?.&/ IDE D § 4ö0Sböfl 0DD340C1 0 | 166 1 _ Introduction R e s e tA n a ly s e E r r o i"
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4fl05bflÃ
IMST212
460Sfe
Link123Special
MemAO-15
MemDO-15
CORP211
inmos t212 transputer
inmos transputer reference manual
series T212 data
INMOS
0D0341C
Inmos T212
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