T2D 03
Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
Text: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V
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SH69P26
SH6610D-based
30kHz
768kHz,
400kHz
T2D 03
T2D 21
T2D 07
t2d7
T2D14
t2d6
T2D 9
sh69p26
t2d 01
t2d 04
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t2d 82
Abstract: t2d 76 t2d 96
Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%
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SH69P55A/K55A
10-bit
768kHz,
400kHz
t2d 82
t2d 76
t2d 96
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t2d7
Abstract: T2D 1D T2D 09 0/diode T2D7
Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%
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SH69P55A/K55A
10-bit
768kHz,
400kHz
t2d7
T2D 1D
T2D 09
0/diode T2D7
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VMVSJ150GP
Abstract: VMVM2C175GP VMVMJ175GP VMVS2A150GP VMVS2TW100GP VMVSJ100GP VMVM3A175GP VMVS2TW070GP VMVS2C100GP VMVMJ100GP
Text: 3L VMV Series 50–175W Champ H.I.D. Luminaires Cl. II, Groups E, F, G, Cl. III & Simultaneous Presence HPS 50W, 70W Marine & Wet Locations 3, 3R, 4, 4X; IP56 to IP66 Applications: Options: VMV series Champ luminaires are used: • In manufacturing plants, refineries,
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S826TB)
VMVSJ150GP
VMVM2C175GP
VMVMJ175GP
VMVS2A150GP
VMVS2TW100GP
VMVSJ100GP
VMVM3A175GP
VMVS2TW070GP
VMVS2C100GP
VMVMJ100GP
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t2d 82
Abstract: T2D 79 marking T2D T2D 07
Text: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS
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000HRS
120Hz/20
120Hz
100VDC
t2d 82
T2D 79
marking T2D
T2D 07
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t2d 82
Abstract: t2d marking code
Text: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS
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000HRS
120Hz/20Â
120Hz
100VDC
t2d 82
t2d marking code
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t2d 82
Abstract: No abstract text available
Text: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS
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000HRS
120Hz/20Â
120Hz
100VDC
t2d 82
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RT4 RR3
Abstract: con10A D52-100 RC3304N SP0503 B12 TT6 5rr11 T2D 53 dmo2 t2d 68
Text: 5 4 3 2 1 T TP1 Vcc3v3 RxTSel TxTSel C RxTSEL TxTSEL 106 INT_TRATIO 103 PTS1_RCLKE PTS2_TCLKE 101 102 22 21 20 CLKSEL0 CLKSEL1 CLKSEL2 RDY_EQC4 TEST ICT CS_EQC3 ALE_EQC2 WR_EQC0 RD_EQC1 38 GCK3 100 RxON SCS1 49 SCS1 R3 SEL 65 67 63 122 TMS TCK TDI TDO 50 51
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LOOP14
LOOP04
LOOP15
LOOP05
LOOP16
LOOP06
LOOP17
LOOP07
F1250T
RT4 RR3
con10A
D52-100
RC3304N
SP0503
B12 TT6
5rr11
T2D 53
dmo2
t2d 68
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T2D 95
Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Text: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ML65244,
ML65245
ML65541
100pF
T2D 95
74FCT244D
T2D 70 diode
t2d diodes
SRAM 256KB 6ns
signal path designer
T2D 83 diode
transistor t2d
FCT541
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10XTV1-CT
Abstract: raychem GS-54 TAPE 20QTVR2 10QTVR2 raychem GS54 10BTV1 15XTV2 H56882 raychem HQTV JBS-100-L-A
Text: R Self-Regulating Cables This step-by-step design guide provides the tools necessary to design a self-regulating heat-tracing system for insulated pipes and tubing. For other applications or for design assistance, contact your Tyco Thermal Controls representative or phone Tyco Thermal
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PS-10
PS-20
E-100,
JBS-100,
JS-100-A
JBM-100
JBM-100,
JS-100-A.
10XTV1-CT
raychem GS-54 TAPE
20QTVR2
10QTVR2
raychem GS54
10BTV1
15XTV2
H56882
raychem HQTV
JBS-100-L-A
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T2D 53
Abstract: t2d diode T2D 65 diode T2D 70 diode t2d 46 T2D 26 diode C8051F320 JTAG t2d 68 T2D 44 diode T2D 52 diode
Text: 5 4 3 2 1 U3B Codes0 S4 T1D C9 RCLK0 RPOS0 RNEG0 1 2 3 4 8 7 6 5 HEADER 4X2 CODES0 RCLK0 RPOS0 RNEG0 D B4 C5 C4 B3 B2 A2 TCLK0 TPOS0 TNEG0 TRING0 E2 16 25 F1 17 20 D1 PO300SA 23 22 D2 PO300SA 21 F2 0.68uf TTIP0 RRING0 RCLK0 RPOS0 RNEG0 E3 D1 R13 R21 10 C1
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PO300SA
RPOS28
XRT83VSH38
T2D 53
t2d diode
T2D 65 diode
T2D 70 diode
t2d 46
T2D 26 diode
C8051F320 JTAG
t2d 68
T2D 44 diode
T2D 52 diode
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T2D 53
Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Text: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ML65244,
ML65245
ML65541
100pF
T2D 53
transistor t2d
diode T2D
MIPS R4000
74FCT244D
T2D 83 diode
FCT541
ML65244
ML65541
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T2D 53
Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Text: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by
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T4D232
T8D432
72-pin,
024-cycle
048-cycle
72-PiRON
000xB
T2D 53
T2D 70
T2D 35
"T2D"
T2D 30
T2D 66
T2D 17
T2D 32
marking T2D
T2D 31
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AT-19
Abstract: No abstract text available
Text: B H 63.25REF T20 T1 ,T11 14 BBBBa MATERIAL : •B‘ CAG E: COPPER ALLOY CONTACT : THERMOPLASTIC 94V-0 & COPPER ALLOY EMI GASKET : STAINESS STEEL LIGHT P IPE: PC 1— — - O O © D © O O 0 O O © © © © © © O O CAGE : NICKEL OVER COPPER O O
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25REF
62REF
R-OP-008200-7-B-N-14
AT-19
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Untitled
Abstract: No abstract text available
Text: B H 63.25REF T20 T1 ,T11 14 BBBBa AV a y MATERIAL : •B‘ D © 1— — - O O O © © O O © © © O O O O © O O © © C O O O O © © o o © © © © O © a O O O © © © CAG E: COPPER ALLOY CONTACT : THERMOPLASTIC 94V-0 & COPPER ALLOY EMI GASKET : STAINESS STEEL
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25REF
62REF
R-OP-008200-7-B-N-15
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R-OP-008200-7-B-N-11
Abstract: No abstract text available
Text: B H 63.25REF T20 T1 ,T11 14 BBBBa UA VA VA VA MATERIAL : •B‘ CAG E: COPPER ALLOY CONTACT : THERMOPLASTIC 94V-0 & COPPER ALLOY EMI GASKET : STAINESS STEEL LIGHT P IPE: PC 1— — - O D O © © O O O © O O © © © O O © O O © O O © © © C O O
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25REF
62REF
R-OP-008200-7-B-N-11
R-OP-008200-7-B-N-11
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUIT TO SH IBA 1. ° 1 (2) (3) (4) (5) TECHNICAL DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL The TC8890 is dedicated mask ROM for speech synthesis LSI. FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.
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TC8890N/F
TC8890
128Kbits.
TC8802AF,
28pin
28pin
OP28pin)
SDIP28pin
TC8890N-XXXX
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Untitled
Abstract: No abstract text available
Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by
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MT4D232
MT8D432
72-pin,
024-cycle
048-cycle
P199S.
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Untitled
Abstract: No abstract text available
Text: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,
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SST5912
SST5912
300ns,
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5353482 ic
Abstract: TC8802 TC8802AF t2d 46
Text: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.
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TC8890
TC8890N/F-1
128Kbits.
28pin
TC8890N-XXXX
P28pin
TC8890F-XXXX
TC8890N/F-2
5353482 ic
TC8802
TC8802AF
t2d 46
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T2D 94
Abstract: MT2D25632M6
Text: M I CR ON S E M I C O N D U C T O R INC b^E ]> • M IC R O N I b l l l S 4 ci G O O ' n S ? lb? WM URN MT2D25632 256K X 32 DRAM MODULE DRAM MODULE 256K x 32 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CMOS silicon-gate process
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MT2D25632
72-pin
750mW
512-cycle
MT2D25632M/G
T2025632
2S632
T2D 94
MT2D25632M6
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T2D 81
Abstract: T2D 066 T2D 78 T2D 77
Text: SEDI 722/24 CMOS LCD DRIVER • CMOS 80-Bit Segment Driver • DESCRIPTION The SED1722/24 is an 80 dot matrix LCD segment column driver for driving high-capacity LCD panels at duty cycles higher than 1/100 (up to 1/500). The LSI features a wide range of LCD drive voltages.
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80-Bit
SED1722/24
SED1733F
100-bit
SED1722)
SED1724)
T2D 81
T2D 066
T2D 78
T2D 77
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T2D 81
Abstract: t2d 46 t2d 82 T2D 83 TC8802AF T2D 2 TC8802 SPEECH SYNTHESIS DI-22 JU TOSHIBA
Text: INTEGRATED CIRCUIT TOSHIBA TECHNICAL 1. 1 ( 2) (3) (4) (5) DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL . The TC8890 is dedicated mask ROM for speech synthesis T-RT FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.
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TC8890
128Kbits.
TC8802AF,
28pin
28pin
OP28pin
SDIP28pin.
TC8890N-XXXX
T2D 81
t2d 46
t2d 82
T2D 83
TC8802AF
T2D 2
TC8802
SPEECH SYNTHESIS
DI-22
JU TOSHIBA
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Untitled
Abstract: No abstract text available
Text: in ttJ o ^ iy i» w 8XC196NP COMMERCIAL CHMOS 16-BIT MICROCONTROLLER • 25 MHz Operation at 4.5-5.5 Volts ■ 1 Mbyte of Linear Address Space ■ Optional 4 Kbytes of ROM ■ 1000 Bytes of Register RAM ■ Register-register Architecture ■ 32 I/O Port Pins
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8XC196NP
16-BIT
16bit)
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