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    T2D 55 Search Results

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    T2D 55 Price and Stock

    ROHM Semiconductor RFN6T2DNZC9

    Rectifiers DIODE-RECTIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RFN6T2DNZC9 1,775
    • 1 $1.1
    • 10 $0.695
    • 100 $0.695
    • 1000 $0.695
    • 10000 $0.678
    		Buy Now

    ROHM Semiconductor RFN20T2DNZC9

    Rectifiers DIODE-RECTIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RFN20T2DNZC9 1,754
    • 1 $3.2
    • 10 $1.6
    • 100 $1.44
    • 1000 $1.04
    • 10000 $1
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    ROHM Semiconductor RFN16T2DNZC9

    Rectifiers DIODE-RECTIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RFN16T2DNZC9 1,732
    • 1 $1.67
    • 10 $0.942
    • 100 $0.942
    • 1000 $0.941
    • 10000 $0.94
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    ROHM Semiconductor RFN10T2DNZC9

    Rectifiers DIODE-RECTIFIER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RFN10T2DNZC9 1,557
    • 1 $2.13
    • 10 $1.13
    • 100 $0.988
    • 1000 $0.818
    • 10000 $0.766
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    ROHM Semiconductor RF2001T2DNZC9

    Rectifiers RF2001T2DNZ is Super Fast Recovery Diode for general rectification.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RF2001T2DNZC9 1,104
    • 1 $1.22
    • 10 $0.809
    • 100 $0.809
    • 1000 $0.809
    • 10000 $0.809
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    T2D 55 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T2D diode

    Abstract: diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D
    Text: Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN


    Original     		RFN16T2D O-220) RFN16 O220FN R1120A T2D diode diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D PDF

    T2D DIODE

    Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
    Text: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①


    Original     		RFN10T2D RFN10 O-220) O220FN R1120A T2D DIODE RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE PDF

    T2D DIODE

    Abstract: T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode RFN16
    Text: RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5


    Original     		RFN16T2D O-220) RFN16 O220FN R1120A T2D DIODE T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode PDF

    T2D 90

    Abstract: T2D 80 "T2D" T2D 30
    Text: 3.3V CMOS Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C


    Original     		7680kHz 30ppm 20ppm 10ppm -10ppm -30ppm -50ppm 012ppm/ 768kHz T2D 90 T2D 80 "T2D" T2D 30 PDF

    T2D 44

    Abstract: T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode
    Text: 3.3V SM Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C


    Original     		7680kHz 30ppm 20ppm 10ppm -10ppm -30ppm -50ppm 012ppm/ 768kHz T2D 44 T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode PDF

    T2D DIODE

    Abstract: T2D DIODE 02
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2


    Original     		AEC-Q101 RFN16T2DFH RFN16 O-220) O220FN R1120A T2D DIODE T2D DIODE 02 PDF

    T2D 03

    Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
    Text: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V


    Original     		SH69P26 SH6610D-based 30kHz 768kHz, 400kHz T2D 03 T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04 PDF

    t2d 82

    Abstract: t2d 76 t2d 96
    Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%


    Original     		SH69P55A/K55A 10-bit 768kHz, 400kHz t2d 82 t2d 76 t2d 96 PDF

    t2d7

    Abstract: T2D 1D T2D 09 0/diode T2D7
    Text: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%


    Original     		SH69P55A/K55A 10-bit 768kHz, 400kHz t2d7 T2D 1D T2D 09 0/diode T2D7 PDF

    VMVSJ150GP

    Abstract: VMVM2C175GP VMVMJ175GP VMVS2A150GP VMVS2TW100GP VMVSJ100GP VMVM3A175GP VMVS2TW070GP VMVS2C100GP VMVMJ100GP
    Text: 3L VMV Series 50–175W Champ H.I.D. Luminaires Cl. II, Groups E, F, G, Cl. III & Simultaneous Presence HPS 50W, 70W Marine & Wet Locations 3, 3R, 4, 4X; IP56 to IP66 Applications: Options: VMV series Champ luminaires are used: • In manufacturing plants, refineries,


    Original     		S826TB) VMVSJ150GP VMVM2C175GP VMVMJ175GP VMVS2A150GP VMVS2TW100GP VMVSJ100GP VMVM3A175GP VMVS2TW070GP VMVS2C100GP VMVMJ100GP PDF

    T2D 90

    Abstract: "T2D" 100w hps ballast v2pc20 photocell hps ignitor T2D 75 T2D 70 F2MVS25Y100 OSRAM ignitor T2D 78
    Text: Champ F2MV Mini-Floodlights Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zone 2, Group IIC Marine locations NEMA Type 4X Wet locations 7L F2MV is a compact floodlight consisting of a Corro-Free epoxy coated copper-free aluminum enclosure, with stainless steel external


    Original     		--cop2MVSY050 F2MVSY070 F2MVSY100 F2MVSY150 F2MVMY070 F2MVMY100 F2MVMY175 LU100 LU150/55 MVR175/C/U T2D 90 "T2D" 100w hps ballast v2pc20 photocell hps ignitor T2D 75 T2D 70 F2MVS25Y100 OSRAM ignitor T2D 78 PDF

    DMVM2C175GP

    Abstract: DMVS2A150GP t2d t3d DMVM2A175GP DMVMJ175GP DMVSJ100GP DMVSJ070GP DMVM2A250GP DMVSJ150GP S826TB
    Text: 3L DMV Series 50-250W For Combustible Dusts Champ H.I.D. Luminaires Applications: Options: DMV series Champ luminaires are used: The following special options are available from the factory by adding suffix to luminaire Cat. No.: • In applications made hazardous by the


    Original     		0-250W S826TB) DMVM2C175GP DMVS2A150GP t2d t3d DMVM2A175GP DMVMJ175GP DMVSJ100GP DMVSJ070GP DMVM2A250GP DMVSJ150GP S826TB PDF

    CPMVS2W070

    Abstract: induction lamp transistor Electronic ballast "INDUCTION LAMP" CPMVIG2W085 CPMVS1W070 S826TB CPMVM1W100 induction lamp ballast V2PC20 CPMVFB2W026
    Text: Champ-Pak Wall Pack Luminares Cl. I, Div. 2, Groups A, B, C, D Restricted Breathing Cl. I, Div. 2 & Zone 2 Suffix S826 Certified for IEC Zone 2 (Suffix S826TB) Cl. II, Groups F, G Cl. III & Simultaneous Presence Marine & Wet Locations Enclosure Type 4X, IP66


    Original     		S826TB) CPMVS2W070 induction lamp transistor Electronic ballast "INDUCTION LAMP" CPMVIG2W085 CPMVS1W070 S826TB CPMVM1W100 induction lamp ballast V2PC20 CPMVFB2W026 PDF

    EV1301

    Abstract: Luminaire Photometric data EVIBX2301 EVIA2301 EVIJ4501 T4A 250V photometric data lamps t2d diode EVIA2500 RA636
    Text: EVI Series Explosionproof Incandescent Luminaires Factory Sealed 100–500W Medium and Mogul Base Applications: EVI series incandescent luminaires are used: • For Type 4X, marine, wet location and hose down environments. • Where a consistent light level relatively


    Original     		EVICX2300 00W/PS25 EVIA2501 00W/PS40 EVIA2500 EV1301 Luminaire Photometric data EVIBX2301 EVIA2301 EVIJ4501 T4A 250V photometric data lamps t2d diode RA636 PDF

    t2d 82

    Abstract: T2D 79 marking T2D T2D 07
    Text: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS


    Original     		000HRS 120Hz/20 120Hz 100VDC t2d 82 T2D 79 marking T2D T2D 07 PDF

    t2d diode

    Abstract: T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN20 RFN-20
    Text: Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF 8.0±0.2


    Original     		RFN20T2D O-220) RFN20 O220FN R1120A t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN-20 PDF

    RFN-10

    Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
    Text: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10


    Original     		RFN10T2D RFN10 O-220) O220FN R1120A RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode PDF

    zener 1B7

    Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
    Text: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage


    OCR Scan     		500-mW 1N5223 1N5258 1N5223A 1N5258A 1N5223B 1N5258B 1N5251 1N5252 1N5253 zener 1B7 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5226 1N5224 PDF

    T2D 53

    Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
    Text: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by


    OCR Scan     		T4D232 T8D432 72-pin, 024-cycle 048-cycle 72-PiRON 000xB T2D 53 T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10 - 2000 MHz Standard Hybrid Amplifier Q O Specification limit Parameters . 1 0 -2 0 0 0 M Hz bandwidth /-N n L I +25 Tem perature Units -55 to +85 ec 10 - 2000 Frequency range SmaJI signal gain M Hz dB 17.5 ± 0.5 Gain vs. temperature • Low VSWR • TO-8 low profile


    OCR Scan     		H91-0323 00005b3 PDF

    T2d 17

    Abstract: 445-1 39-00-0038 5556 MOLEX T2D 07
    Text: 13 12 0.2 — 10 (C U T O FF TAB NO TES ( I.9) LENG TH) 1 — ^ 3 - - ^ ^ ^^ ^ ^ P F D = M A T E R IA L : S E E CHART. FINISH: S E E C HART. PRO DU CT S P EC IFIC ATIO N : PS -5 556- 001, P S - 5 5 5 6 - 0 0 2 , P S - 5 5 5 6 - 0 0 3 . PAC K A G IN G S P EC IFIC ATIO N : P K - 5556- 001 FO R CHAIN T E R M IN A L S


    OCR Scan     		PDF

    CMM0331-AK

    Abstract: No abstract text available
    Text: S = = €E LE R Ê T£K CMM0331 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion


    OCR Scan     		CMM0331 CMM0331 CMM0331-AK PDF

    TP0606N7

    Abstract: No abstract text available
    Text: TP0606N6 TP0606N7 Çh Super te x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss / BVdgs RdS ON (max) -60V 3.5£2 Order Number / Package 14-Pin P-Dip 14-Pin C-Dip* TP0606N6 TP0606N7 14 pin side brazed ceramic DIP


    OCR Scan     		TP0606N6 TP0606N7 14-Pin TP0606N7 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by


    OCR Scan     		MT4D232 MT8D432 72-pin, 024-cycle 048-cycle P199S. PDF