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    T2D 50 DIODE Search Results

    T2D 50 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    T2D 50 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T2D DIODE

    Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
    Text: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①


    Original     		PDF RFN10T2D RFN10 O-220) O220FN R1120A T2D DIODE RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE

    t2d diode

    Abstract: T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN20 RFN-20
    Text: Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF 8.0±0.2


    Original     		PDF RFN20T2D O-220) RFN20 O220FN R1120A t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN-20

    RFN-10

    Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
    Text: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10


    Original     		PDF RFN10T2D RFN10 O-220) O220FN R1120A RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode

    T2D DIODE

    Abstract: T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2


    Original     		PDF AEC-Q101 RFN10T2DFH RFN10 O-220) O220FN R1120A T2D DIODE T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode

    T2D 40 DIODE

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)


    Original     		PDF AEC-Q101 RFN20T2DFH O-220) RFN20 O220FN R1120A T2D 40 DIODE

    T2D DIODE

    Abstract: T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode RFN16
    Text: RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5


    Original     		PDF RFN16T2D O-220) RFN16 O220FN R1120A T2D DIODE T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80 RFN16T2D T2d 30 diode

    T2D diode

    Abstract: diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D
    Text: Data Sheet Super Fast Recovery Diode RFN16T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN


    Original     		PDF RFN16T2D O-220) RFN16 O220FN R1120A T2D diode diode t2d T2D 16 DIODE T2D 80 diode T2D DIODE 60 T2D DIODE 25 T2D 80_ diode diode t2d 05 diode t2d 80 RFN16T2D

    T2D diode

    Abstract: T2D 80 diode RFN20 RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05
    Text: RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF


    Original     		PDF RFN20T2D O-220) RFN20 O220FN R1120A T2D diode T2D 80 diode RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05

    T2D DIODE

    Abstract: T2D DIODE 02
    Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2


    Original     		PDF AEC-Q101 RFN16T2DFH RFN16 O-220) O220FN R1120A T2D DIODE T2D DIODE 02

    T2D 95

    Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
    Text: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In


    Original     		PDF ML65244, ML65245 ML65541 100pF T2D 95 74FCT244D T2D 70 diode t2d diodes SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541

    T2D 53

    Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
    Text: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In


    Original     		PDF ML65244, ML65245 ML65541 100pF T2D 53 transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65541

    T2D DIODE

    Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
    Text: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD


    OCR Scan     		PDF Q62702-A732 EHA070GI DO-35 fl235bOS f-100 fi53SbDS 00bb5b5 T2D DIODE T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06

    zener 1B7

    Abstract: 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5223 1N5226 1N5223A 1N5224 1N5258
    Text: blE D • M4Tb2DS OOIMOSS T2D ■ H I T M HITACHI/ OPTOELECTRONICS Appendix D 500-mW Zener Regulator Diodes 1N5223 through 1N5258 1N5223A through 1N5258A 1N5223B through 1N5258B Table D - l Absolute M axim um Ratings Item Symbol Rating Unit Notes Forward Voltage


    OCR Scan     		PDF 500-mW 1N5223 1N5258 1N5223A 1N5258A 1N5223B 1N5258B 1N5251 1N5252 1N5253 zener 1B7 125c79 hitachi suffix Hitachi "v suffix" IN5223B 1N5226 1N5224

    T2D 22 diode

    Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
    Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode

    T2D 85 diode

    Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
    Text: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V


    OCR Scan     		PDF IRLS510A O-220F 71b4m2 D3T23b T2D 85 diode T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54

    34B SOT

    Abstract: NDT455N
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N NDT455N OT-223 34B SOT

    T2D 24 DIODE

    Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N OT-223 NDT455N OT-223 T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D

    UC1838

    Abstract: No abstract text available
    Text: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs


    OCR Scan     		PDF UC1838 UC2838 UC3838

    30PF

    Abstract: DS3893A DS3893AV V20A
    Text: DS3893A National Semiconductor DS3893A BTL TURBOTRANSCEIVER General Description The TURBOTRANSCEIVER is designed for use in very high speed bus systems. The bus terminal characteristics of the TURBOTRANSCEIVER are referred to as "Backplane Transceiver Logic” BTL . BTL is a new logic signaling stan­


    OCR Scan     		PDF DS3893A TL/F/B69B-9 0Q740bl 30PF DS3893AV V20A

    T2D 85 diode

    Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
    Text: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies


    OCR Scan     		PDF MP7628 MP7628 T2D 85 diode FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode

    T2D 70 diode

    Abstract: T2D DIODE
    Text: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State


    OCR Scan     		PDF LTC1320 RS422/RS562 RS422 RS562 LT1054 551fiMbfl T2D 70 diode T2D DIODE

    diode t2d 77

    Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
    Text: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies


    OCR Scan     		PDF MP7628 MP7529B P7628 diode t2d 77 T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80

    MP7680JN

    Abstract: No abstract text available
    Text: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs


    OCR Scan     		PDF MP7680 12-bit MP7680 MP7680JN

    T2D 24 DIODE

    Abstract: T2d 43 diode
    Text: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking


    OCR Scan     		PDF MP7680 12-Bit 12-bit 3455blfl 3422bl6 QDQ741Q T2D 24 DIODE T2d 43 diode