Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    T20 N06V Search Results

    T20 N06V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP90N06VDK-E2-AY Renesas Electronics Corporation 60 V – 90 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
    NP90N06VDK-E1-AY Renesas Electronics Corporation 60 V – 90 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
    NP60N06VDK-E1-AY Renesas Electronics Corporation 60 V – 60 A – N-channel Power MOS FET Visit Renesas Electronics Corporation
    NP90N06VLG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP45N06VUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation

    T20 N06V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T20N06V

    Abstract: t20 N06V t20n06 N06V T20N06V datasheet MTD20N06VT4 MTD20N06V AN569
    Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60


    Original
    MTD20N06V MTD20N06V/D T20N06V t20 N06V t20n06 N06V T20N06V datasheet MTD20N06VT4 MTD20N06V AN569 PDF

    T20N06V

    Abstract: t20 N06V N06V MTD20N06VT4 t20n06
    Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60


    Original
    MTD20N06V MTD20N06V/D T20N06V t20 N06V N06V MTD20N06VT4 t20n06 PDF

    t20 N06V

    Abstract: T20N06V
    Text: MTD20N06V Power Field Effect Transistor N−Channel DPAK This device is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 V devices. This device is designed to withstand high energy


    Original
    MTD20N06V MTD20N06V/D t20 N06V T20N06V PDF