Untitled
Abstract: No abstract text available
Text: Comchip ESD Protection Array SMD Diode Specialist CSRS065V0-G RoHS Device Working Voltage: 5Volts SO T2 3- 6 Features - Fast Reverse Recovery Time. - Fast Turn on Time. - Low Capacitance SMD Packages. - 16kV IEC61000-4-2 capable. SOT-23-6 .122(3.10) .107(2.70)
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CSRS065V0-G
IEC61000-4-2
OT-23-6
OT-23-6
MILSTD-750D,
QW-BP013
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BAP70-05 Silicon PIN diode Rev. 4 — 27 January 2014 Product data sheet 1. Product profile 1.1 General description Two planar PIN diodes in common cathode configuration in a SOT23 small SMD plastic package. 1.2 Features and benefits
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BAP70-05
AEC-Q101
sym027
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placeholder for manufacturing site code
Abstract: No abstract text available
Text: SO T2 3 BAT754 series Schottky barrier diodes Rev. 3 — 9 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic
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BAT754
O-236AB)
AEC-Q101
placeholder for manufacturing site code
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smd sot23 marking l6
Abstract: NXP SCHOTTKY DIODE BAT720
Text: SO T2 3 BAT720 Schottky barrier diode Rev. 4 — 14 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic
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BAT720
O-236AB)
AEC-Q101
smd sot23 marking l6
NXP SCHOTTKY DIODE BAT720
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Untitled
Abstract: No abstract text available
Text: Steering Diode Array-TVS Suppressors CSRS065V0-G/CSRS045V0-G/CSRS085V0-G Working Voltage: 5Volts RoHS Device Features SO T2 SO 36 -Fast Reverse Recovery Time. -Fast Turn on Time. -Low Capacitance SMD Packages. -16kV IEC61000-4-2 capable. 14 IC SO 3 -8 SOT-23-6
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CSRS065V0-G/CSRS045V0-G/CSRS085V0-G
-16kV
IEC61000-4-2
OT-23-6
OT-23-6
CSRS065V0-G,
OT-143
CSRS045V0-G,
CSRS085V0-G.
CSRS065V0-G
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bat54 NXP Diodes
Abstract: BAT54 NXP BAT54A,215, NXP
Text: SO T2 3 BAT54 series Schottky barrier diodes Rev. 5 — 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic
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BAT54
O-236AB)
AEC-Q101
bat54 NXP Diodes
BAT54 NXP
BAT54A,215, NXP
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PMV40UN2
Abstract: No abstract text available
Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV40UN2
O-236AB)
PMV40UN2
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV48XPA 20 V, P-channel Trench MOSFET 10 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV48XPA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV50XP
O-236AB)
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6R SMD MARKING CODE
Abstract: NXP PESD2CAN
Text: SO T2 3 PESD2CAN CAN bus ESD protection diode Rev. 2 — 27 September 2012 Product data sheet 1. Product profile 1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device SMD plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage
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AEC-Q101
6R SMD MARKING CODE
NXP PESD2CAN
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV20XNE
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 NX7002BK 60 V, N-channel Trench MOSFET 8 August 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX7002BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSS138AKA 60 V, single N-channel Trench MOSFET 6 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSS138AKA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV65XPE
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 March 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV250EPEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV250EPEA 40 V, P-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV250EPEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV130ENEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XPEA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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BSH111BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSN20BK
O-236AB)
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Untitled
Abstract: No abstract text available
Text: SO T2 3 NX3020NAK 30 V, single N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX3020NAK
O-236AB)
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PMV65XP
Abstract: No abstract text available
Text: SO T2 3 PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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PMV65XP
O-236AB)
PMV65XP
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Untitled
Abstract: No abstract text available
Text: SO T2 3 NX7002AKA 60 V, single N-channel Trench MOSFET 18 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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NX7002AKA
O-236AB)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV30UN2
O-236AB)
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