transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
R09DS0036EJ0300
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D73 MAIDA
Abstract: D6544ZOV D6544 RS-468
Text: TAPE AND REEL • TAPE AND REEL SERIES INTRODUCTION Maida zinc-oxide varistors are also available in ammo pack or Tape and Reel packaging formats. Generally, through-hole varistors with a lead spacing of 0.394 inches and a nominal disk diameter of 20mm can be taped. All components of the
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RS-468.
requir15
D73 MAIDA
D6544ZOV
D6544
RS-468
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ADM1032
Abstract: transistor T1J 2N3904 2N3906
Text: ±1°C Remote and Local System Temperature Monitor ADM1032 FEATURES GENERAL DESCRIPTION On-chip and remote temperature sensing Offset registers for system calibration 0.125°C resolution/1°C accuracy on remote channel 1°C resolution/3°C accuracy on local channel
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ADM1032
ADM10321
ADM1032
transistor T1J
2N3904
2N3906
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE Philips Semiconductors_ b'lE ]> bbS3^31 DDBbS^b STT » A P X _ Preliminary specification Very fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed SOD81 glass
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BYD43-20
S0D81.
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s 2 umi 1A 250V
Abstract: umi 150 5A 250V umi 5A 250V 2SC2979 1J1ST
Text: Æ&m o s p e c HIGH-VOLTAGE HIGH-SPEED POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit,motor control,solenoid and relay drivers. FEATURES: * Collector-Emitter Sustaining VoltageV C E O s u s = 800 V (Min)
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2SC2979
s 2 umi 1A 250V
umi 150 5A 250V
umi 5A 250V
2SC2979
1J1ST
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S20S100
Abstract: S20S70 S20S80 S20S90
Text: Sk MOSPEC S20S70 Thru S20S100 SWITCHMODE POWER RECTIFIERS d 2 pak SCHOTTKY BARRIER RECTIFIERS surface mount pow er package The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:
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S20S70
S20S100
O-22Q
S20S90
S20S100
S20S80
S20S90
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CSA10
Abstract: CD4069UBE M30800MC TCD-99-6C09
Text: Technical Data of Ceramic Resonator Type CSA10.0MTZ CST10.0MTW Applied to M30800MC HP-mode TOYAMA MURATA MANUFACTURING CO., LTD. Product Engineering Service Section I Planning Department Piezoelectric Components Group Approved by Checked by Checked by S.Iwasaki
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M30800MC
TCD-99-6C09
CSA10
M30B00MC
CD4069UBE
CD4069UBE
TCD-99-6C09
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NSCM
Abstract: No abstract text available
Text: vu m LF Un m O lû It g m m - NO. © s& NAME K -z ? - 7 " CTRADE MARK) C5ECT3 *£ ! 1. 2. * * ) * « » 3. 3.5 14.6 1 C TABLE 1 5 l^- /0\k B : 179939-u : 17791 4 - C i , 17791 5-C 4. Sit A «.*» i 108-5410 W * * (MATERIAL) A (HEADER HOUSING) « 2 4 » A*
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Mfct94v-0J
179939-u
179939-u
100AY
NSCM
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D44R4
Abstract: D44R2 D40N5 D44R8 D40N1 D40N2 D40N3 D40N4 D40P1 D40P3
Text: SILICON POWER TRANSISTORS NPN HIGH VOLTAGE GE Type Pt rc = 25°C M ax. W D40N1 D40N2 D40N3 D40N4 6.25 6 .2 5 6.25 6 .2 5 v CEO M in. (V) 6.25 120 D40P3 6 .2 5 180 D42R2 D 42R 3 D42R4 15 225 250 300 15 15 250 15 60 300 D40P1 D42R I 30 300 375 6 .2 5 60 250
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500mA
D40N1
D40N2
D40N3
D40N4
D40N5
D40P1
D40P3
D40P5
D42RI
D44R4
D44R2
D44R8
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MSM534020B
Abstract: No abstract text available
Text: O K I Semiconductor MSM534020B 262,144-Word x 16-Bit Mask ROM DESCRIPTION lue? ^ ^ 020B iS 3 hlgh_SPeed silicon 8ate CMOS Mask ROM with 262,144-word x 16-bit capacity. The MSM534020B operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro
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MSM534020B
144-Word
16-Bit
MSM534020B
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TEA-1035
Abstract: TEA1035
Text: DATA SHEET NEC 1 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1576 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION T he itzPA1576 is N-channel P ow er M O S FET A rray that built in 4 circuits designed for solenoid, m otor and lamp driver. FEATURES • 4 V driving is possible
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PA1576
itzPA1576
PA1576H
IEI-1209)
TEI-1202
MEI-1202
IEI-1207
TEA-1034
TEA-1035
TEA-1035
TEA1035
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BDX33c equivalent
Abstract: P6019 BDX33D equivalent X33B BDX33 69-6R
Text: BDX33, BDX33A, BDX33B, BDX33C, BDX33D HARRIS SEMICOND SECTOR SbE D File Number • 4 3 0 2 8 7 1 O D M O b l l S34 « H A S 10-Ampere N-P-N Darlington Power Transistors 7 ^ 3 3 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A B DX33, BDX33A
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BDX33,
BDX33A,
BDX33B,
BDX33C,
BDX33D
10-Ampere
BDX33A)
BDX33D)
BDX33c equivalent
P6019
BDX33D equivalent
X33B
BDX33
69-6R
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D44R4
Abstract: D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6
Text: Silicon Power Pac Transistors HIGH VOLTAGE The General Electric D44R is a red, silicone encapsulated, power transistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high frequency inverters/
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T0-220
D44R4
D44R2
D44R8
D44R1
D44R3
D44R7
D44R
D44R5
D44R6
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doc-70
Abstract: c431a
Text: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since
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MSM27C431AZB
288-Word
MSM27C431AZB
7Cf31
MSM27-
C431AZB
32-pin
MSM27C421ZB)
doc-70
c431a
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Untitled
Abstract: No abstract text available
Text: MIC2920A/29201 29202 29204 400m A Low-Dropout Voltage Regulator General Description Features High output voltage accuracy Guaranteed 400mA output Low quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefficient
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MIC2920A/29201
400mA
IC29202/MIC29204)
T0-220,
O-220-5,
O-263-5,
OT-223,
MIC2920A
370mV
O-263-5
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Untitled
Abstract: No abstract text available
Text: S ilic o n T ra n s is to r 2SD1950 N P N x t 7 + y 7 ; i/ i> i& m ì& w tìim u m -> > 9 1-9 4 2 S D 1950 Ü , hFK \ ÿ ' y :J 7 , 9 T , 1 / ^ 9 m a M J ± T , M tl o ^ ' P ^ ^ t z n b , | 3 {&mWMJ±T<r>*: ')u-, ? > r i p c o ; * æ s K 7 4 y"m t L -9, ft
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2SD1950
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Untitled
Abstract: No abstract text available
Text: TAPE AND REEL INTRODUCTION M aida zinc-oxide varistors are also available In a m m o pack or Tape and Reel packaging form ats. Generally, through-hole varistors w ith a lead spacing o f 0.394 inches and a nom inal disk dia m e te r o f 20 m m can be taped. All c o m p o n e n ts o f the
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RS-468.
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PDF
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7MBP50NA060-01
Abstract: u4100
Text: - iL - y W m 'O h S Fuji New Semiconductor Products 600V / 50A / 7 fUM 7MBP50NA060-01 If# H Features 7 V7 I* — £ v ju [1 i f a i l ' t t Low switching-surge and noise Low power loss H gh reliability I Maximum ratings and characteristics Absolute maximum ratings
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7MBP50NA060-01
7MBP50NA060-01
u4100
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2N1227
Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation
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2N155
2N156
2N158
2N158A
2N173
T0-13
2N174
2N176
2N234A
2N1227
2M214
2N1202
1j63
2N2148
2NS40
2N511
2N236A
2N420
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLCS-47 Series TMP47P454V CMOS 4-Bit Microcontroller The 47P454V is the OTP microcontroller with 32kbits PROM. For program operation, the programming is achieved by using with EPROM programmer TMM2764AD type and adapter socket (BM1119). AC/DC characteristics are equivalent to
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TLCS-47
TMP47P454V
47P454V
32kbits
TMM2764AD
BM1119)
TMP47P454VN
SDIP30
BM1119
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2N3614
Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation
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2N155
2N156
2N158
2N158A
2N173
T0-13
2N174
2N176
2N234A
2N3614
2N441
2N1553
2N1560
2N511B
2N669
2N511
2N3312
1534a
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cept lpd d
Abstract: No abstract text available
Text: DALLAS DS2188 T1/CEPT Jitter Attenuator s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Attenuates clock and datajitter present inT1 orCEPT lines C 1 16 H VDD RPOS C 2 15 RNEG C 3 14 RCLK C 4 13 C 5 L 6 C 7 C 8 12 D □ H 1 Il D H DJA • Meets the jitter attenuation templates outlined in
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DS2188
TR62411,
TR-TSY-000170,
16-PIN
CMO95
l4130
001225b
DS2188S
cept lpd d
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Untitled
Abstract: No abstract text available
Text: b3E I> • bl032Gl QGG7S33 E46 IP1CHP MICROCHIP TECHNOLOGY INC 28C17A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera
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bl032Gl
QGG7S33
28C17A
polS11127D-page
bl032Ql
28C17AF
200ns
DS11127D-page
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