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    T17 TRANSISTOR Search Results

    T17 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T17 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IMIT TC2

    Abstract: LTC2054 LTC2439-1 LT6100 LT1787 DC907A-A DC590B LTC6101 LTC6102 TC6102
    Text: DEMO CIRCUIT 9 0 7 LTC6102/6101, LT6100, LT1787, LTC2054, AND Q UICK S TALTC2439-1 RT G UIDE L TC6 10 2 / 6 10 1, L T6 10 0 , L T17 8 7 , L TC2 0 5 4 , a n d L TC2 4 3 9 -1 DESCRIPTION Demonstration circuit 907 includes six different Current Sense circuits featuring the LTC6102/6101, LT6100,


    Original     		PDF LTC6102/6101, LT6100, LT1787, LTC2054, LTC2439-1 LTC6102/ LTC2439-1. IMIT TC2 LTC2054 LTC2439-1 LT6100 LT1787 DC907A-A DC590B LTC6101 LTC6102 TC6102

    T16 C6

    Abstract: 500 watts amplifier schematic diagram
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier


    Original     		PDF MRF19060 MRF19060S MRF19060 T16 C6 500 watts amplifier schematic diagram

    T17 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19060/D MRF19060 MRF19060S MRF19060/D T17 motorola

    100B100JCA500X

    Abstract: CDR33BX104AKWS MRF19060 MRF19060S Circuit Diagram Panasonic Model DIM 74 100B5R1JCA500X
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19060/D MRF19060 MRF19060S MRF19060 100B100JCA500X CDR33BX104AKWS MRF19060S Circuit Diagram Panasonic Model DIM 74 100B5R1JCA500X

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3

    IBM0316809C

    Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
    Text: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8


    Original     		PDF IBM0316169C IBM0316409C IBM0316809C cycles/64ms IBM0316809C ibm T22 cmos dram T20 96 diode

    C10H

    Abstract: LA7138M GSH1
    Text: Ordering number : ENA0220 LA7138M Monolithic Linear IC For the DVD Player Analog Video Signal I/F Driver Overview The LA7138M is a video output interface IC for DVD players. It is an ideal DVD player driver IC that generates analog video signals such as composite/S and component/RGB signals. Incorporating Y/C-MIX, the LA7138M can dispense with


    Original     		PDF ENA0220 LA7138M LA7138M -80dB. 10MHz A0220-13/13 C10H GSH1

    BUX69

    Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
    Text: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53


    OCR Scan     		PDF BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 300min BUX29 100min BUX34 BUX69 BUX37 BUX55 BUX80

    TDA8304

    Abstract: colour tv circuit diagram 50 hz Oscillator inverter dc ac DB-450.5 diagram tv Philips 14 tv transmitter amplifier circuit mqe 601
    Text: Philips Semiconductors bb53T24 D 0 7 b b t17 7 3 3 ISIC3 Small signal combination 1C for colour TV NAPC/PHILIPS SEMICOND FEATURES • Gain controlled vision IF amplifier • Synchronous demodulator for negative and positive demodulation • AGC detector operating on peak


    OCR Scan     		PDF bb53T24 D07bbt17 TDA8304 50pFi TDA8304 colour tv circuit diagram 50 hz Oscillator inverter dc ac DB-450.5 diagram tv Philips 14 tv transmitter amplifier circuit mqe 601

    Untitled

    Abstract: No abstract text available
    Text: 7^5^537 ÜOMSöSb T17 • S 6 TH SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE250N05 V dss RDS on Id 50 V < 0.004 n 250 A . HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH80N05 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER


    OCR Scan     		PDF STE250N05 STH80N05 E81743) GC547BO GC54770

    npn 200w

    Abstract: 2N6688 BUX20A 140W 2N5320 2N5322 2N5323 2N5671 2N5672 BUX10A
    Text: TCSK - TDSbfl?! 0005727 T17 5ûE D THOMSON/ DISTRIBUTOR Bipolar Power Transistors High-Speed Switching Continued V c E (S 3 t)-V h FE T y p e No. v C E O (*u s ) V VcEX(*u«) V 2N 5 3 2 3 2N 5 3 2 2 -7 5 * * -1 0 0 * -5 0 -7 5 90 90 120 125 125 140 120


    OCR Scan     		PDF 2N5322 2N5320 60MHz 2N5323 -500m O-205AD/ npn 200w 2N6688 BUX20A 140W 2N5671 2N5672 BUX10A

    BEC npn

    Abstract: SOT-23 EBC PT2221 N54 SOT-23
    Text: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|


    OCR Scan     		PDF D5G433Ô BEC npn SOT-23 EBC PT2221 N54 SOT-23

    ECG130

    Abstract: ECG222 ECG216 ECG196 ECG197 ECG210 ECG198 ECG192A ECG193A ECG194
    Text: Transistors cont'd ECG193A ECG194 ECG195A ECG196 C ollector To Base Volts BV c b O Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) 70 (Compl to ECG192A) MPN-Si, Gen Purp HV Amp, 180 Hi Speed Sw NPN-Si, RF Pwr Amp/Driver 70


    OCR Scan     		PDF ECG193A ECG192A) T-16HS ECG194 ECG195A ECG196 ECG197) O-220 O-39F ECG225 ECG130 ECG222 ECG216 ECG197 ECG210 ECG198 ECG192A

    ECG210

    Abstract: ECG130 ECG222 ECG198 ECG219 ECG192A ECG193A ECG194 ECG195A ECG196
    Text: Transistors cont'd Description and A pplication ECG Type ECG193A ECG194 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) C ollector To Base Volts C ollector To Em itter Volts Base to E m itter Volts BV c b O b v CEO B V e BO M a x. C ollector C urrent


    OCR Scan     		PDF ECG193A ECG192A) ECG194 ro-92 ECG195A ro-39 ECG196 ECG197) r0-220 O-39F ECG210 ECG130 ECG222 ECG198 ECG219 ECG192A

    ECG130

    Abstract: ECG213 ECG198 pnp-si darlington power amp NPN transistor Ic 50A td tr ts tf ECG210 ECG222 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG196 ECG197
    Text: Transistors cont'd Max. Collector Current l c Am ps Max. Device Diss. P[j Watts 05 70 70 (CES) 5 5 ECG194 VIPN-Si, Gen Purp HV Amp, Hi Speed S w 180 160 4 6 U Packag e Current Gain hFE Fig. Case No. 120 120 min M 6HS T22* 100 100 typ ro -92 H6 150 30 min


    OCR Scan     		PDF ECG193A ECG192A) ECG194 ro-92 ECG19SA ro-39 ECG196 ECG197) O-220 O-39F ECG130 ECG213 ECG198 pnp-si darlington power amp NPN transistor Ic 50A td tr ts tf ECG210 ECG222 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG197

    ECG123AP

    Abstract: transistor ECG123 ECG159 transistor ECG128 ECG152 ECG128 ECG157 transistor ECG123a ECG123 ECG123A
    Text: Transistors cont'd ECG Type ECG107 ECG108 ECG121 Description and Application (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts bvCBO Collector To Emitter Volts bvCEO Base to Emitter Volts BVEbo 5 Max. Collector Current lc Amps


    OCR Scan     		PDF ECG107 ro-92 ECG108 ECG121 ECG121MP* ECG123 ECG123A O-220 ECG154 ECG123AP transistor ECG123 ECG159 transistor ECG128 ECG152 ECG128 ECG157 transistor ECG123a

    ECG123AP

    Abstract: ECG159 transistor ECG128 ECG128 ecg123A ECG123 ECG152 ECG127 transistor ECG123 transistor ECG123a
    Text: Transistors cont'd ECG Type ECG107 Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO b v CEO b v Eb o NPN-Si, UHF/VHF Amp, Osc, Vlix, IF Amp


    OCR Scan     		PDF ECG107 ro-92 ECG108 ECG121 ECG121MP* ECG123 ECG123A ECG159 ECG159MCP ECG123AP transistor ECG128 ECG128 ECG152 ECG127 transistor ECG123 transistor ECG123a

    ECG123AP

    Abstract: transistor ECG128 transistor ECG123 ECG123 ECG130 ECG153 ECG159 ECG121 ECG154 ecg127
    Text: PHILIPS E C G INC 54E D Transistors cont'd ECG Type Description and Application • bbSBRSfi 00D714T b^S ■ECfi (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Collector To Emitter Volts b vCEO Base to Emitter Volts


    OCR Scan     		PDF GGG7141 ECG107 ECG108 ECG121 ECG121MP* ECG123 ECG159 ECG159MCP ECG123AP) ECG123AP ECG123AP transistor ECG128 transistor ECG123 ECG130 ECG153 ECG154 ecg127

    ECG18

    Abstract: 2T202 ECG10 # Frequency at which common emitter current gain is 70.0 of low frequency gain T17 amp ECG29 # Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50 T28A ecg32
    Text: Transistors Bi-Polar Types Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts b v C bo Description and Application ECG Type C o lle c to r T o E m itter V o lts B a s e to E m itter V o lts BVc e o b v ebo Max. Collector Current


    OCR Scan     		PDF ECG10 ECG11 ECG12 ECG11) ECG13 T20-3 ECG14 ECG31 ECG32) O-92M ECG18 2T202 # Frequency at which common emitter current gain is 70.0 of low frequency gain T17 amp ECG29 # Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50 T28A ecg32

    ecg123A

    Abstract: ECG123AP transistor ECG123a transistor ECG123 ECG159 transistor ECG128 ECG107 ECG123 ECG130 ECG153
    Text: Transistors cont'd ECG Type ECG107 Description and Application (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Collector To Emitter Volts b v CEO NPN-Si, UH F/VH F Am p, Osc, Vlix, IF Am p 35 ECG108 NPN-Si, R F /IF /V ideo Am p,


    OCR Scan     		PDF ECG107 ECG108 ECG121 ECG121MP* ECG123 ECG123A ECG123AP ECG159 ECG160 ECG161 ECG123AP transistor ECG123a transistor ECG123 ECG159 transistor ECG128 ECG130 ECG153

    T28A

    Abstract: ECG10 t28a transistor ECG12 ECG13 ECG33 low noise vhf amp transistor lowest noise audio NPN ecg32 ECG15
    Text: Transistors B i - P o l a r T y p e s M axim um Ratings at T c = 25°C Unless Otherwise Noted ECG Type D e sc rip tio n and A p p lic a tio n C o lle c to r T o B a se V o lts C o lle c to r T o E m itter V o lt s BVc b O BVc e O M ax. B a se to I C o lle c to r


    OCR Scan     		PDF ECG10 ro-92 ECG11 ECG12 ECG11) ECG13 T20-3 O-92M T28A t28a transistor ECG33 low noise vhf amp transistor lowest noise audio NPN ecg32 ECG15

    T17 TRANSISTOR

    Abstract: sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6
    Text: L A 7 3 0 1, 7 3 0 1 M No.2404 SAIÊYO F Monolithic Linear IC VHS VTR P l a y b a c k He a d Am p , Re c/ o r d"Vi n g Am p I Ji' v Functions • 4-channel playback head amp . 2-channel recording amp ♦ PB; 2 head select switches, k mode select switch^/ . KEC: 4 head select switches, 2 mode select switches


    OCR Scan     		PDF LA730 7301M 6CM61E) vii555Vpp 630kK& 2J40H- T17 TRANSISTOR sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6

    Untitled

    Abstract: No abstract text available
    Text: KSC1394 NPN EPITAXIAL SILICO N TRANSISTOR TV VHF TUNER MIXER • High Current Gain Bandwidth Product fT=700MHz fiyp • High Power Gain Gpa=20dB Min) at f=200MHz • Low Noise Figure NF=3.5dB (Max) at f=200MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF KSC1394 700MHz 200MHz VCE-11

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSU E 3 - JANUARY 1996 FEATURES * * High ÎT-900M H Z M in M axcapacitance=1pF * Low noise 4.5dB Wl A fe ', P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L


    OCR Scan     		PDF T-900M 100MHz 200MHz FMMT5179 00CH337