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    GT10J311

    Abstract: h0320
    Text: TOSHIBA G T10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT GT 10J311 Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)


    OCR Scan     		PDF GT10J311 GT10J311 h0320

    ENFP

    Abstract: No abstract text available
    Text: T O SH IB A G T10J311 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT T10J311 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30//s Max. Low Saturation Voltage : V q e (sat) = 2-7V (Max.)


    OCR Scan     		PDF T10J311 GT10J311 30//s ENFP