Untitled
Abstract: No abstract text available
Text: ISSI - 4-i IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12,15, 20, 25 ns T he IS S I IS61C64AH is a ve ry high-speed, low power, 8 192-w ord by 8-bit static RAM. It is fabricated using FSSI's high-perform ance CM O S technology. T his highly reliable pro
|
OCR Scan
|
PDF
|
IS61C64AH
192-w
IS61C64AH-12N
IS61C
300-m
IS61C64AH-15N
IS61C64AH-15J
|
IS61SF6436
Abstract: No abstract text available
Text: ISSF 64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM advance INFORMATION MARCH1997 FEATURES DESCRIPTION • Fast access times: 8.5 ns, 9 ns, 10 ns • Internal self-timed write cycle The ISSIIS61SF6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, high
|
OCR Scan
|
PDF
|
I5TOE6436_
MARCH1997
100-Pin
IS61SF6436
SF6436-8
IS61SF6436-9TQ
IS61SF6436-9PQ
IS61SF6436-1OTQ
IS61SF6436-10PQ
IS61SF6436
|
Untitled
Abstract: No abstract text available
Text: 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION DECEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Automated Byte Write and Block Erase — Industry-Standard Command User Interface
|
OCR Scan
|
PDF
|
16-KB
96-KB
PK13197T1-40
0044D4
|
PK131
Abstract: No abstract text available
Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y OCTOBER 1997 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They
|
OCR Scan
|
PDF
|
IS62LV1024L
IS62LV1024LL
IS62LV1024LL
072-word
PK13197TS32
TGG4404
PK131
|
628F
Abstract: MAX714
Text: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY AD VA N C E INFORM ATIO N DEC EM B ER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Industrial Temperature Operation 40°C to +85° C
|
OCR Scan
|
PDF
|
IS28F400BV/BLV
IS28F400BVB-80TI
IS28F400BVT-80TI
48-pin
44-pin
IS28F400BLVB-120TI
IS28F400BLVT-120TI
628F
MAX714
|
S0044-0
Abstract: No abstract text available
Text: 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION DECEMBER 1996 • S m artV oltage T e ch n o lo g y — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • H igh-P erform ance Read Maximum Access Times — 5V: 60/80/120 ns
|
OCR Scan
|
PDF
|
16-KB
96-KB
128-KB
PK13197T1-40
1G044G4
S0044-0
|
MG005-QA
Abstract: MG005 pin diagram of micro controller 89c52 intel 8052
Text: is m CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 8K x 8 FLASH MEMORY ADVANCE INFORM ATION M AY 1997 FEATURES G ENERAL DESCRIPTION • 80C52 based architecture The ISSI IS89C52 is a high-performance micro controller fabricated using high-density CMOS technology. The CMOS IS89C52 is functionally
|
OCR Scan
|
PDF
|
80C52
16-bit
40-pin
44-pin
IS89C52
MG005-QA
MG005
pin diagram of micro controller 89c52
intel 8052
|
IS62LV1024-45Q
Abstract: IS62LV1024-55Q 12130
Text: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro
|
OCR Scan
|
PDF
|
ISSIIS62LV1024
072-word
PK13197T32
T004404
IS62LV1024-45Q
IS62LV1024-55Q
12130
|
1S93C56-3
Abstract: No abstract text available
Text: ISSI 1S93C56-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM AUGUST 1995 FEATURES OVERVIEW • State-of-the-art architecture — N on-vo latile data storage — Low vo lta g e operation: 3.0V V cc = 2.7 V to 6.0V — Full T T L co m p a tib le inputs and outputs
|
OCR Scan
|
PDF
|
1S93C56-3
048-BIT
IS93C56-3
048-bit,
128evice
EE81995C56
IS93C56-3
IS93C56-3P
IS93C56-3G
1S93C56-3
|
Untitled
Abstract: No abstract text available
Text: 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • S m artV oltage T echnology — 5V or 12V Program /Erase — 2.7V, 3.3V or 5V Read O peration • H igh-Perform ance Read M axim um Access Tim es — 5V: 60/80/120 ns — 3V: 110/130/150 ns — 2.7V: 120 ns
|
OCR Scan
|
PDF
|
16-KB
96-KB
128-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
IS28F002BLVT-120TI
|
Untitled
Abstract: No abstract text available
Text: 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • H igh-speed access tim e: 35, 45, 55, 70 ns The/557 IS62LV1024 is a low voltage and low power, 131,072word by 8-bit CMOS static RAM. It is fabricated using /5 5 /'s high-performance CMOS technology. This highly reliable pro
|
OCR Scan
|
PDF
|
The/557
IS62LV1024
072word
PK13197T32
T0D4404
D000553
|
IS61SP6436
Abstract: S0044 D2259 2061D
Text: 6 4Kx 36 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION JULY 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The IS S IIS61SP6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, high performance, secondary cache for the i486 , Pentium™,
|
OCR Scan
|
PDF
|
100-Pin
IS61SP6436-7TQ
IS61S
P6436-7PQ
IS61SP6436-8TQ
IS61SP6436-8PQ
SP6436-4
IS61SP6436-5TQI
IS61SP6436-5PQI
IS61SP6436
S0044
D2259
2061D
|
Untitled
Abstract: No abstract text available
Text: IS27LV010 ISSI 131,072 X 8 LOW VOLTAGE CMOS EPROM FEATURES DESCRIPTION • Single 3.3V power supply The ISSI IS27LV010 is a low voltage, low power, high-speed 1 megabit 128K-word by 8-bit Ultraviolet Erasable CMOS Programmable Read-Only Memory. It utilizes the standard
|
OCR Scan
|
PDF
|
IS27LV010
32-pin
128K-word
IS27C010
PK13197T32
T004404
|