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    T0262 Search Results

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    T0262 Price and Stock

    Samtec Inc IDMD-17-T-02.62

    SLIM BODY DOUBLE-ROW IDC MALE AS
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    DigiKey IDMD-17-T-02.62 Bulk 1
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    Avnet Americas IDMD-17-T-02.62 Bulk 1
    • 1 $13.57
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    Mouser Electronics IDMD-17-T-02.62
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    Master Electronics IDMD-17-T-02.62
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    Sager IDMD-17-T-02.62 1
    • 1 $13.57
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    • 100 $9.74
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    Vishay Sfernice RCMT02625R0DES03

    SFERNICE FIXED RESISTORS
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    DigiKey RCMT02625R0DES03 Bag 10
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    Samtec Inc TCMD-22-T-02.62-01

    Cable Assembly Flat Ribbon 0.066m 28AWG 44 POS IDC Connector to 44 POS IDC Connector M-F IDT-IDT Bulk - Bulk (Alt: TCMD-22-T-02.62-01)
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    Master Electronics TCMD-22-T-02.62-01
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    Samtec Inc IDMS-16-T-02.62

    Cable Assembly Flat 0.066m 28AWG 16 POS IDC Connector to 16 POS IDC Connector PL-SKT IDT-IDT Bulk - Bulk (Alt: IDMS-16-T-02.62)
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    Master Electronics IDMS-16-T-02.62
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    Bourns Inc 4816P-T02-621

    4800P Series Thick Film Resistor Array 620Ohm 2% 1.28W 100 ppm/°C Bussed 16-Pin SOM Surface Mount Tube - Rail/Tube (Alt: 4816P-T02-621)
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    Avnet Americas 4816P-T02-621 Tube 2,000
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    Find more T0262 price and stock on Findchips.com

    T0262 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20N35GVL

    Abstract: HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A TA49076 ignition WITH IGBTS T0-262AA T0263AB
    Text: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection


    Original     		PDF HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS O-220AB 175oC O-262AA 20N35GVL HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A TA49076 ignition WITH IGBTS T0-262AA T0263AB

    schematic diagram inverter 12v to 24v 1000w

    Abstract: 1000w class d circuit diagram schematics IRF 9234 schematic diagram inverter 12v to 24v 30a 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics laptop LCD inverter SCHEMATIC 12vdc to 230vac mosfet inverter 700w audio amplifier circuit diagram schematic diagram inverter 2000w
    Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 1 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.


    Original     		PDF

    HGT1S20N35G3VL

    Abstract: HGT1S20N35G3VLS HGTP20N35G3VL 20N35GVL 20N35 HGT1S20N35G3VLS9A IGBT DRIVER ignition coil automotive TA49076 T0-262AA T0263AB
    Text: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs December 2001 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection


    Original     		PDF HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS O-220AB 175oC O-262AA HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL 20N35GVL 20N35 HGT1S20N35G3VLS9A IGBT DRIVER ignition coil automotive TA49076 T0-262AA T0263AB

    HGT1S20N35G3VL

    Abstract: HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A T0-262AA T0263AB
    Text: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs November 2003 Features Packages JEDEC TO-220AB • Logic Level Gate Drive COLLECTOR EMITTER • Internal Voltage Clamp GATE COLLECTOR FLANGE • ESD Gate Protection


    Original     		PDF HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS O-220AB 175oC O-262AA HGT1S20N35G3VL HGT1S20N35G3VLS HGTP20N35G3VL HGT1S20N35G3VLS9A T0-262AA T0263AB

    Untitled

    Abstract: No abstract text available
    Text: MALE STRAIGHT POLARISED HEADER SMT 1548 SERIE. 1.27 x 2.54 mm. 0.050 x 0.100” . Low profile Features  •       Available in 10, 14, 16, 20, 26, 30, 34, 40, 50, 60, 68, 70, 80, 90 and 100 circuits Mates with female header 1540 Gold and phosphor bronze with different plating


    Original     		PDF T0101E T0141E T0161E T0201E T0261E T0301E T0341E T0401E T0501E T0601E

    74 hc 59581

    Abstract: b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16
    Text: 717 Technical portal and online community for Design Engineers - www.element-14.com Semiconductor Hardware & Thermal Management Page Page 727 725 725 732 739 732 749 736 725 724 723 723 724 721 720 722 726 752 728 751 Crystal Oscillator Sockets . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 74 hc 59581 b768 transistor transistor smd 661 752 8 pin ic base socket round pin type lead 652B0082215-002 MM5231 702 transistor smd code LA9100 LGA 1155 Socket PIN diagram smd transistor w16

    Untitled

    Abstract: No abstract text available
    Text: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì


    OCR Scan     		PDF IRF530NS) IRF530NL) PD-91352A IRF530NS/L

    Untitled

    Abstract: No abstract text available
    Text: In te rn a tio n a l pd-9.i 6i 7b IRF3315S/L 1QR R e c t i f i e r _PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF3315S Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching


    OCR Scan     		PDF IRF3315S) IRF3315L) IRF3315S/L

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.904B International IOR Rectifier IR L Z 2 4 S /L HEXFET Power MOSFET • • • • • Advanced Process Technology Surface Mount IRLZ24S Low-profile through-hole (IRLZ24L) 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier


    OCR Scan     		PDF IRLZ24S) IRLZ24L)

    Untitled

    Abstract: No abstract text available
    Text: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRF9Z24NS) IRF9Z24NL)

    Untitled

    Abstract: No abstract text available
    Text: PD-91338F International IÖR Rectifier • • • • • • • IRL3103S/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL3103S Low-profile through-hole (IRL3103L) 175°C Operating Temperature Fast Switching


    OCR Scan     		PDF IRL3103S) IRL3103L) PD-91338F IRL3103S/L

    15N120C3

    Abstract: No abstract text available
    Text: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching


    OCR Scan     		PDF HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 350ns 15N120C3

    G3N60B

    Abstract: No abstract text available
    Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    OCR Scan     		PDF HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 GTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 115ns 1-800-4-HARRIS G3N60B

    12n60c3d

    Abstract: IGBT 12n60c3D
    Text: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­


    OCR Scan     		PDF HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS TA49123. TA49188. O-263AB 12n60c3d IGBT 12n60c3D

    T0-262AA

    Abstract: No abstract text available
    Text: HAFRRIS S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description • 45A,60V The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and


    OCR Scan     		PDF RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM RF1S45N06LESM 1-800-4-HARRIS T0-262AA

    Untitled

    Abstract: No abstract text available
    Text: PD-91308A In te rn a tio n a l I ö R Rectifier • • • • • • • IRLZ34NS/L Logic-Level Gate Drive Advanced Process Technology Surface Mount IRLZ34NS Low-profilethrough-hole(IRLZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan     		PDF IRLZ34NS) IRLZ34NL) PD-91308A IRLZ34NS/L

    IRF1010E

    Abstract: *f1010e T0-262 EIA marking code RV surface mount diode
    Text: PD- 9.1720 In te rn a tio n a l I ö R Rectifier IR F 1 0 1 0 E S /L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF101OES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan     		PDF IRF101OES) IRF1010EL) IRF1010E *f1010e T0-262 EIA marking code RV surface mount diode

    Untitled

    Abstract: No abstract text available
    Text: I , I P D -9.131 OB International 3BR Rectifier IRF3710S/L p r e l im in a r y H E X F E T ^ P ow er M O S F E T • • • • • • Advanced Process Technology Surface Mount IRF3710S Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching


    OCR Scan     		PDF IRF3710S/L IRF3710S) IRF3710L) 4A554S2 0027TÃ

    IRL3705

    Abstract: d2p marking code
    Text: International Iö R Rectifier PD -91502C IRL3705NS/L • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL3705NS • Low-profile through-hole (IRL3705NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRL3705NS) IRL3705NL) IRL3705 d2p marking code

    IRL2505S

    Abstract: No abstract text available
    Text: PD -91326D In te rn a tio n a l I ö R Rectifier • • • • • • • IRL2505S/L Logic-Level Gate Drive Advanced Process Technology Surface Mount IRL2505S Low-profile through-hole (IRL2505L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan     		PDF IRL2505S) IRL2505L) -91326D IRL2505S/L IRL2505S

    RF9540

    Abstract: No abstract text available
    Text: PD -91483C International Iö R Rectifier IRF9540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount I RF9540S • Low-profile through-hole (IRF9540L) • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated


    OCR Scan     		PDF RF9540S) IRF9540L) RF9540

    Untitled

    Abstract: No abstract text available
    Text: u a q q ic HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance


    OCR Scan     		PDF HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 1-800-4-HARRIS

    DSB15IM45IB

    Abstract: common cathode to220 DSA20C45PB DSA30C45HB DSA30C45 DSA30C45PB DSB30C30PB DSB30C45HB DSB30C45PB DSB30C60PB
    Text: □ IXYS New Generation of Silicon Schottky rectifiers VER Y LO W V f R E C T I F I E R S R A N G I N G F R O M 8 T O 2 0 0 V O L T S F O R O R 'I N G A N D S M P S A P P L I C A T I O N S March 2006 Overview: IXYS Corporation - a leader in power semiconductors for Power Conversion and Motion Control


    OCR Scan     		PDF T0-262 O-262 DSB15IM45IB common cathode to220 DSA20C45PB DSA30C45HB DSA30C45 DSA30C45PB DSB30C30PB DSB30C45HB DSB30C45PB DSB30C60PB

    TP20N

    Abstract: T0263AB T0-262AA HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS
    Text: HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS fü HARRIS S E M I C O N D U C T O R 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs April 1995 Packages Features JEDEC TO-220AB • Logic Level Gate Drive EMITTER . • Internal Voltage Clamp COLLECTOR


    OCR Scan     		PDF HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS O-220AB TP20N T0263AB T0-262AA HGTP20N35G3VL HGT1S20N35G3VL HGT1S20N35G3VLS