Untitled
Abstract: No abstract text available
Text: CT"Silicoriix MRA P-Channel Enhancement-Mode MOSFET in c o r p o r a te d lw l • TYPE PACKAGE DEVICE Single TO-72 T0206AF • 3N163,3N164 Single Chip • Available as MRA1CHP TYPICAL CHARACTERISTICS Output Characteristics Transfer Characteristics VDS (V)
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OCR Scan
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T0206AF)
3N163
3N164
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to 206af
Abstract: to-206af sd210 206af SD214 rings To206AF
Text: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical
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OCR Scan
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SD210
SD211
SD212
SD213
SD214
SD215
Isolation--120dB
Drivers--SD210,
SD211
Switches--SD214,
to 206af
to-206af
206af
rings
To206AF
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marking code vishay SILICONIX to-236
Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
Text: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA
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OCR Scan
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PAD50
PAD5Q/JPAD50
SSTPAD100
JPAD50
They50
SSTPAD100
SSTPAD5/100
S-04029--Rev.
04-Jun-01
marking code vishay SILICONIX to-236
marking code vishay SILICONIX to-72
vishay siliconix code marking to-92
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2n4416
Abstract: Siliconix N-Channel JFETs marking code vishay SILICONIX to-72 2N4416 Siliconix SST4416
Text: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S Min (V) gfs Min (mS) loss (mA) -3 0 4.5 -2 .5 to - 6 -3 5 4.5 5 -< 6 -3 0 4.5 5 2N4416 -< 6 2N4416A SST4416 5 FEATURES BENEFITS APPLICATIONS
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OCR Scan
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2N4416/2N4416A/SST4416
2N4416
2N4416A
SST4416
2N4416/A,
2N4416/2N4416A/SSTce
S-04028--
04-Jun-01
Siliconix N-Channel JFETs
marking code vishay SILICONIX to-72
2N4416 Siliconix
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High-Speed Analog N-Channel DMOS FETs -TO-72
Abstract: sd5000 sd5000 series 51850
Text: T em ic SD5000/5400 Series Semiconductors N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary P a rt N um ber V BR DS M in (V ) VGS(th) M a x (V) rDscon) M a x (Q ) Crss M a x (p F ) tON M a x (ns) SD5000I 20 1.5 70 @ VGs = 5 V
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OCR Scan
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
High-Speed Analog N-Channel DMOS FETs -TO-72
sd5000
sd5000 series
51850
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5d210
Abstract: SD214 5d211 sp214 SD21G SD211 5d213 5d214 SD210 SD215
Text: T OPA Z S E M I C O N D U C T O R OSE D • ^OfiSaSb O D D l O O b ’ T' 1 I - 3 ¿T -Z- SD210, SD211, SD242, SD213.SD214.SD215 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MGS FET SWITCHES ORDERING INFORMATION T O -206AF TO-72 Package Shorting Rings SD210DE
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OCR Scan
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SD210,
SD211,
SD212,
SD213
SP214
SD215
O-206AF
SD210DE
SD211DÃ
SD212DE
5d210
SD214
5d211
SD21G
SD211
5d213
5d214
SD210
SD215
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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OCR Scan
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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SST5484
Abstract: No abstract text available
Text: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0
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OCR Scan
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T0220
T0237
T0220AA
PN4117A
PN4118A
PN4119A
2N4416A
2N4117A
2N4118A
2N4119A
SST5484
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PDF
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to-226aa
Abstract: TO226AA T0-226AA CR16 J511
Text: T emic S e m i c o n d u c t o r s S08 T 078 T071 Small-Signal Diodes Part Number Nominal Forward Current mA Forward Current Tolerance (±%) Limiting Voltage Max (V) Peak Operating Voltage Min (V) Dynamic Impedance Min (kQ) Typ Knee Impedance (kQ) Package
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OCR Scan
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CR160
CR180
CR200
CR220
CR240
CR270
CR300
CR330
CR360
CR390
to-226aa
TO226AA
T0-226AA
CR16
J511
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PDF
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SST4118
Abstract: 2n4117a equivalent 2N4117A
Text: T e m ic 2N/PN/SST4117A Series Siliconix N-Channel JFETs 2N4117A 2N4118A 2N4119A PN4117A SST4117 PN4118A SST4118 PN4119A SST4119 Product Summary Part Number 4117 VGS off (V) V(BR)GSS Min (V) gl* Min (mS) lo s s Min (|<A) -4 0 70 30 -0 .6 to -1.8 4118 - 1 to —3
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OCR Scan
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2N/PN/SST4117A
2N4117A
2N4118A
2N4119A
PN4117A
SST4117
PN4118A
SST4118
PN4119A
SST4119
2n4117a equivalent
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PDF
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N-Channel JFET FETs
Abstract: T072
Text: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60
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OCR Scan
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T0220
T0237
T0226AA
VP0300L
BS250
VP0610L
P06I0L
VP0808L
VP1008L
TP1220L
N-Channel JFET FETs
T072
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PDF
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sd5000n
Abstract: TO72 package n-channel jfet sd214de
Text: H DMCA/B N-Channel JFET Enhancement-Mode DMOS FET in c o rp o ra te d DEVICE TYPE PACKAGE Single TO-72 T0-206AF • SD21 ODE, SD211DE, SD214DE, SD215DE Single SOT-143 • SST211, SST215 Quads Dual-ln-Line 16-Pin Sidebraze • SD5000I Quads Dual-ln-Line 16-Pin Plastic
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OCR Scan
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SD211DE,
SD214DE,
SD215DE
SST211,
SST215
SD5000I
SD5000N,
SD5001N
SD5400CY,
SD5401CY,
sd5000n
TO72 package n-channel jfet
sd214de
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PDF
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3SD21
Abstract: tt 2144 bv ui 302 0220
Text: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION
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OCR Scan
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O-206AF
CTO-72)
SD210DE
SD210DBR
SD211DE
SD211DE/R
SD211CHP
SD212DE
SD212DE/R
SD212CHP
3SD21
tt 2144
bv ui 302 0220
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PDF
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vcr7n
Abstract: J270 jfets SST271
Text: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000
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OCR Scan
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O206AA
T0206AA
T0206AF
T0220AA
2N5460
2N5461
2N5462
vcr7n
J270
jfets
SST271
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PDF
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2N5032
Abstract: 2N5031 t0206
Text: MOTOROLA SEM ICO NDUCTOR 2N5031 2N5032 TECHNICAL DATA The RF Line 2.5 dB @ 450 MHz - 2N5031 3.0 dB @ 450 MHz - 2N5032 HIG H FREQUENCY TRANSISTORS NPN SILICON HIG H FREQUENCY TRANSISTORS NPN SILICON . . . designed p r im a r ily signal a m p lifie rs . •
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OCR Scan
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2N5031
2N5032
2N5031,
2N5032
t0206
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PDF
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