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    Abstract: No abstract text available
    Text: IBM11S2325HP IBM11S4325HP IBM11S2325HM IBM11S4325HM 2M/4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -6R -70 I rAC RAS A ccess T im e ; 60ns j 60ns 70ns fcAC CAS Access Tim e i 15ns [ 17ns 20ns AA Access Tim e From Address


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    IBM11S2325HP IBM11S4325HP IBM11S2325HM IBM11S4325HM 72-Pin 104ns 124ns PDF

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    Abstract: No abstract text available
    Text: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 m A / 8 0 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version)


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    IBM014440 IBM014440M IBM014440P SOJ-26/24s 82F6673 0QG3G32 PDF

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    Abstract: No abstract text available
    Text: IBM11D4325B IBM11D8325B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC I RAS Access Time 60ns 70ns tcAC ! CAS Access Time 15ns 2 0 W ¡Access Time From Address 30ns 35ns tRC ¡CycleTime


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    IBM11D4325B IBM11D8325B 72-Pin 104ns 124ns 000377b 26H3207 26H3208) PDF

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    Abstract: No abstract text available
    Text: IBM11S2320HP IBM11S4320HP IBM11S2320HM IBM11S4320HM 2M/4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -70 W c RAS Access Time 60ns 70ns T > o -60 CAS Access Time 15ns 20ns *AA Access Time From Address


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    IBM11S2320HP IBM11S4320HP IBM11S2320HM IBM11S4320HM 72-Pin 110ns 130ns T00L14b IBM11S4320HP IBM11S2320HP PDF