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    CDFP4-F24

    Abstract: CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3
    Text: CMM5104 S E M I C O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM November 1995 Pinouts Features 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si)


    Original     		PDF CMM5104 MIL-STD-1835, CDIP2-T18 100kHz A12/2 200kHz CDFP4-F24 CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3

    CDFP4-F24

    Abstract: CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3 r2a5
    Text: CMM5104 Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM November 1995 Pinouts Features 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF CMM5104 MIL-STD-1835, CDIP2-T18 CDFP4-F24 CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3 r2a5

    1dz 2

    Abstract: CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3
    Text: CMM5114A S E M I C O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4-Bit LSI Static RAM November 1995 Features Pinouts 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si)


    Original     		PDF CMM5114A MIL-STD-1835, CDIP2-T18 100KHz A12/2 200KHz 1dz 2 CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3

    pin diagram of ic 74163

    Abstract: ic 74163 pin diagram of 74163 CDFP4-F16 HCS163 HCS163DMSR HCS163HMSR HCS163KMSR HCS163MS
    Text: HCS163MS Radiation Hardened Synchronous Presettable Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)


    Original     		PDF HCS163MS MIL-STD-1835 CDIP2-T16, -55oC 125oC pin diagram of ic 74163 ic 74163 pin diagram of 74163 CDFP4-F16 HCS163 HCS163DMSR HCS163HMSR HCS163KMSR HCS163MS

    1dz 2

    Abstract: CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3 CDFP
    Text: CMM5114A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4-Bit LSI Static RAM November 1995 Features Pinouts 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF CMM5114A MIL-STD-1835, CDIP2-T18 1dz 2 CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3 CDFP

    pin diagram of ic 74163

    Abstract: ic 74163 Truth Table 74163 pins and their function in ic 74163 pin diagram of 74163 ic 74163 APPLICATIONS HCS163DMSR IC 74160 DATA SHEET logic diagram of 74160 Truth Table 74160
    Text: HCS163MS Radiation Hardened Synchronous Presettable Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)


    Original     		PDF HCS163MS MIL-STD-1835 CDIP2-T16, -55oC 125oC pin diagram of ic 74163 ic 74163 Truth Table 74163 pins and their function in ic 74163 pin diagram of 74163 ic 74163 APPLICATIONS HCS163DMSR IC 74160 DATA SHEET logic diagram of 74160 Truth Table 74160

    motorcycle cdi ignition

    Abstract: capacitor discharge ignition motorcycle ignition circuit diagram cdi ignition cdi ignition circuit diagram TMS3705A motorcycle capacitor discharge ignition MOTORCYCLE IGNITION TIRIS DST "capacitor discharge ignition"
    Text: AN10357 Application of Philips P89LPC932 microcontroller on RF card reader ignition control Rev. 01 — 11 April 2005 Application note Document information Info Content Keywords P89LPC900 RF Reader, CDI Control, TMS3705A, MCU Abstract Based on TI’s RF ID reader base station IC and via the trigger of


    Original     		PDF AN10357 P89LPC932 P89LPC900 TMS3705A, P89LPC932 motorcycle cdi ignition capacitor discharge ignition motorcycle ignition circuit diagram cdi ignition cdi ignition circuit diagram TMS3705A motorcycle capacitor discharge ignition MOTORCYCLE IGNITION TIRIS DST "capacitor discharge ignition"

    Untitled

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    512MB SDR SDRAM CHIP

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz 512MB SDR SDRAM CHIP

    a15 id hen vns

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz a15 id hen vns

    Untitled

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QC*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    V59C1

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz V59C1

    Untitled

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    fbga84

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QC*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz fbga84

    Untitled

    Abstract: No abstract text available
    Text: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    V59C1512

    Abstract: No abstract text available
    Text: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns


    Original     		PDF V59C1512 32Mbit 16Mbit DDR2-400 DDR2-533 DDR2-667 DDR2-800 400MHz

    L9D3256M32SBG1

    Abstract: No abstract text available
    Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999


    Original     		PDF L9D3256M32SBG1 L9D3512M32SBG1 256-512M DDR3-1333 LDS-L9D3xxxM32SBG1 L9D3256M32SBG2I107 L9D3256M32SBG1

    EDD5108AGTA

    Abstract: EDD5116AGTA EDD5116AGTA-4
    Text: DATA SHEET 512M bits DDR SDRAM EDD5108AGTA-4 64M words x 8 bits EDD5116AGTA-4 (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDD5108AGTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AGTA)


    Original     		PDF EDD5108AGTA-4 EDD5116AGTA-4 EDD5108AGTA) EDD5116AGTA) 66-pin 500Mbps M01E0706 E1195E20 EDD5108AGTA EDD5116AGTA EDD5116AGTA-4

    E0741E

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR SDRAM EDD5108AFTA-5 64M words x 8 bits, DDR400 EDD5116AFTA-5 (32M words × 16 bits, DDR400) Specifications Pin Configurations • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDD5108AFTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AFTA)


    Original     		PDF EDD5108AFTA-5 DDR400) EDD5116AFTA-5 EDD5108AFTA) EDD5116AFTA) 66-pin 400Mbps cycles/64ms M01E0107 E0741E

    BC207

    Abstract: BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238A BC238B
    Text: Maximum Ratings Type No. BC207 V CBO ''CEO V EBO V Min (V) Min (V) Min 50 45 5 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (A) <W) @Tc=25°c 0.625 0.1 *c b o vca m ^CES VCE @ (V) (mA) Max (V) Max Min 0.015 40 lc « (mA) I fe 110


    OCR Scan     		PDF BC207 to-92 BC208B O-92-4 BC209C to-92-4 BC237 BC317B BC319 BC237 BC237A BC237B BC237C BC238 BC238A BC238B

    sk42

    Abstract: 1r1h
    Text: ^ TOSHIBA {DISCRETE/OPTO> 9 0 9 7 2 5 0 T O S H IB A DE I clQci7550 0QlL n74 99D 166 74 < D IS C R E T E / O P T O D jr-2.îT T - tfoÀiiìht SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 4 2 2 SILICON N CHANNEL MOS TYPE < TT- M O S ) INDUSTRIAL APPLICATIONS


    OCR Scan     		PDF 220mS 100nA sk42 1r1h