CDFP4-F24

Abstract: CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3
Contextual Info: CMM5104 S E M I C O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM November 1995 Pinouts Features 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si)

CDFP4-F24

Abstract: CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3 r2a5
Contextual Info: CMM5104 Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM November 1995 Pinouts Features 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

BC207

Abstract: BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238A BC238B
Contextual Info: Maximum Ratings Type No. BC207 V CBO ''CEO V EBO V Min (V) Min (V) Min 50 45 5 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (A) <W) @Tc=25°c 0.625 0.1 *c b o vca m ^CES VCE @ (V) (mA) Max (V) Max Min 0.015 40 lc « (mA) I fe 110

1dz 2

Abstract: CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3
Contextual Info: CMM5114A S E M I C O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4-Bit LSI Static RAM November 1995 Features Pinouts 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si)

pin diagram of ic 74163

Abstract: ic 74163 pin diagram of 74163 CDFP4-F16 HCS163 HCS163DMSR HCS163HMSR HCS163KMSR HCS163MS
Contextual Info: HCS163MS Radiation Hardened Synchronous Presettable Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

1dz 2

Abstract: CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3 CDFP
Contextual Info: CMM5114A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4-Bit LSI Static RAM November 1995 Features Pinouts 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

pin diagram of ic 74163

Abstract: ic 74163 Truth Table 74163 pins and their function in ic 74163 pin diagram of 74163 ic 74163 APPLICATIONS HCS163DMSR IC 74160 DATA SHEET logic diagram of 74160 Truth Table 74160
Contextual Info: HCS163MS Radiation Hardened Synchronous Presettable Counter September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

motorcycle cdi ignition

Abstract: capacitor discharge ignition motorcycle ignition circuit diagram cdi ignition cdi ignition circuit diagram TMS3705A motorcycle capacitor discharge ignition MOTORCYCLE IGNITION TIRIS DST "capacitor discharge ignition"
Contextual Info: AN10357 Application of Philips P89LPC932 microcontroller on RF card reader ignition control Rev. 01 — 11 April 2005 Application note Document information Info Content Keywords P89LPC900 RF Reader, CDI Control, TMS3705A, MCU Abstract Based on TI’s RF ID reader base station IC and via the trigger of

Contextual Info: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns

512MB SDR SDRAM CHIP

Contextual Info: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

a15 id hen vns

Contextual Info: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1512 404/804/164 QC*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1512 404/804/164 QC*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

V59C1

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns

Contextual Info: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

fbga84

Contextual Info: V59C1512 404/804/164 QC*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1512 404/804/164 QB*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

V59C1512

Contextual Info: PRELIMINARY V59C1512 404/804/164 QB HIGH PERFORMANCE 512 Mbit DDR2 SDRAM 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns

sk42

Abstract: 1r1h
Contextual Info: ^ TOSHIBA {DISCRETE/OPTO> 9 0 9 7 2 5 0 T O S H IB A DE I clQci7550 0QlL n74 99D 166 74 < D IS C R E T E / O P T O D jr-2.îT T - tfoÀiiìht SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 4 2 2 SILICON N CHANNEL MOS TYPE < TT- M O S ) INDUSTRIAL APPLICATIONS

L9D3256M32SBG1

Contextual Info: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999

EDD5108AGTA

Abstract: EDD5116AGTA EDD5116AGTA-4
Contextual Info: DATA SHEET 512M bits DDR SDRAM EDD5108AGTA-4 64M words x 8 bits EDD5116AGTA-4 (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDD5108AGTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AGTA)

E0741E

Contextual Info: DATA SHEET 512M bits DDR SDRAM EDD5108AFTA-5 64M words x 8 bits, DDR400 EDD5116AFTA-5 (32M words × 16 bits, DDR400) Specifications Pin Configurations • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDD5108AFTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AFTA)