BPV11F
Abstract: National 8250
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
2002/95/EC
2002/96/EC
18-Jul-08
National 8250
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
08-Apr-05
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
D-74025
08-Mar-05
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BPV11F
Abstract: No abstract text available
Text: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
08-Apr-05
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BPV11F
Abstract: an 8249
Text: BPV11F VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm .
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BPV11F
BPV11F
D-74025
26-Mar-04
an 8249
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TFK diodes
Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
Text: VISHAY Vishay Semiconductors Tape and Reel Standards IR Emitters Vishay Semiconductors offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.
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T-13/4
14-Aug-03
TFK diodes
TFK 03 diodes
TFK BPW 83
IR diodes TFK 4
IR diodes TFK BPW 41 N
Vishay DaTE CODE tantal
tfk s 220
TFK BPW 24
TFK BPW 75
2.5/TFK BPW 83
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TEFT4300
Abstract: TSUS4300
Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. The epoxy package itself is an IR filter, spectrally
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TEFT4300
TEFT4300
TSUS4300
2002/95/EC
2002/96/EC
08-Apr-05
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TEFT4300
Abstract: TSUS4300
Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. The epoxy package itself is an IR filter, spectrally
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TEFT4300
TEFT4300
900nm)
TSUS4300
2002/95/EC
2002/96/EC
D-74025
08-Mar-05
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PLT90-BTPT
Abstract: PLT90-WCPT
Text: www.p-tec.net sales@p-tec.net Tel: Fax: 719 589 3122 (719) 589 3592 PLT90 PHOTOTRANSISTOR SERIES 3MM (T 1) Features Absolute Maximum Ratings at TA = 25 °C * High Illumination Sensitivity * Stable Characteristics * Spectrally and Mech. Matched with IR Emitter
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PLT90
20mw/cm2
PLT90-WCPT
PLT90-BTPT
PLT90-BTPT
PLT90-WCPT
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TEFT4300
Abstract: TSUS4300 Infrared emitter
Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor Description TEFT4300 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. The epoxy package itself is an IR filter, spectrally
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TEFT4300
TEFT4300
900nm)
TSUS4300
2002/95/EC
2002/96/EC
08-Apr-05
Infrared emitter
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MID-57422
Abstract: No abstract text available
Text: T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR MID-57422 Package Dimensions Description The MID-57422 is a NPN silicon phototransistor mounted in a lensed , water clear plastic package to fit wide range of IR light source. Unit : mm inches ψ5.05 (.200) 5.47 (.215)
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MID-57422
MID-57422
40MIN.
50TYP.
00MIN.
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TFK BPW 41 N
Abstract: IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK
Text: Vishay Semiconductors Tape and Reel Standards Vishay Semiconductor offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.
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T-13/4
TFK BPW 41 N
IR diodes TFK BPW 41 N
TFK 162 -12
TFK 705
TFK BPW 83
TFK diodes
TFK 451
tfk bpw 77
TFK bpw 21
705 TFK
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tfk bpw 77
Abstract: TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N
Text: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.
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T-13/4
tfk bpw 77
TFK BPW 83
TFK diodes
TFK 705
tfk 605
IR diodes TFK 4
TFK 451
TFK BPW 41 N
BPW 83 TFK
IR diodes TFK BPW 41 N
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IR diodes TFK 4
Abstract: TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52
Text: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.
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T-13/4
IR diodes TFK 4
TFK diodes
IR diodes TFK BPW 41 N
tfk 19
TFK 451
TFK 705
tfk 605
TSAL6200
TFK BPW 41 N
TFK 52
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Untitled
Abstract: No abstract text available
Text: 40E D B 34cH73fl QQQISBb S B S E N I Absolute Maximum Ratings Ta = 25°C unless otherwise stated. Features • • • • T^t/f-7-3 po board mount or wire leads*1' IR-transmissive housing121 (R-220) IR-opaque housing*21 (R-225) two sensitivity ranges Description
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H73fl
R-220)
R-225)
R-220
R-225
R-225;
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Untitled
Abstract: No abstract text available
Text: T Z ^ Y ^1 jT , P H O T O iN T E R R U P T E R S J T ransm it typ e SG-212 SG-212B, DIMENSIONS Unit:mm F O ^ T ^ T 't o The SG-212 is a photointerrupter consisting of G aA s IR E D and phototransistor. $§ft FEATURES • S 'M I • 0.4mm aperture • Easy to mount on P.C .B.
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SG-212
SG-212B,
SG-212
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SG-23FF
Abstract: SG-23FH RPC100 KT72 SG-229 h7 229 TNR SG phototransistor K-T
Text: TZ^Y jT, ^1 P H O T O iN T E R R U P T E R S J Tr ansim i type SG-229 SG-229«\ DIMENSIONS Unit:m m ST - to The SG-229 is a photointerrupter consisting of GaAs IR ED and phototransistor. FEATURES • ¡a t t S f t H & t t i 2 -4 0.75 ±0.05 • S ifi's c 0 # « A ''§ S o
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SG-229
SG-229S
KT-72
SG-229
30itiA
SG-23FF
SG-23FH
RPC100
KT72
h7 229
TNR SG
phototransistor K-T
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hiif2
Abstract: 250M SG-224 SG-226 SG-227 SG-228 SG228 phototransistor K-T
Text: Y ^1 T Z ^ jT , P H O T O iN T E R R U P T E R S J T r a n s im i t y p e SG-224 sG-224ii , • i ^ d S C B l M t U * 314, O f t ‘ ->f Li - KT'=i * DIMENSIONS Unit:mm o$ gg-pTo The SG-224 is a photointerrupter consisting of G aA s IR E D and phototransistor.
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SG-224
SG-224U,
SG-224
100/isec.
10msec.
Ta-25Â
hiif2
250M
SG-226
SG-227
SG-228
SG228
phototransistor K-T
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st2160
Abstract: TIP 318 transistor TIP 320 OPB861T OPB861T51 OPB861T55 diode 319 TRANSISTOR 318
Text: [S X ! ir ^ r —1 SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB 861 T 51 /O PB 861 T 5 5 PACKAGE DIMENSIONS SEE NOTE 3 p1 I ] s I (ft - .3 1 3 (7.94) OPTICAL •1 2 5 (3 -JJ7)“ C ENTERLINEx E“ ~ r .345 (6.76) I I .020(0.51)' T 1-.100 (2.54) .125 (3.18) R
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OPB861T51
/OPB861T55
OPB861T
OPB861T55
st2160
TIP 318
transistor TIP 320
diode 319
TRANSISTOR 318
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IR diodes TFK 4
Abstract: TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20
Text: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for auto
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OCR Scan
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T-13/4
IR diodes TFK 4
TFK 225
tfk 635
TFK diodes
tfk 605
TSIP 5200
TFK BPW 41 N
IR diodes TFK BPW 41 N
tfk smd
TFK BPW 20
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Untitled
Abstract: No abstract text available
Text: _ S289P w m m f _ ▼ Vishay Telefunken Silicon Darlington Phototransistor Description S289P is an extra high sensitive monolithic silicon epi taxial planar Darlington phototransistor in a standard T-1 0 3 mm package. The epoxy package itself is an IR filter, spectrally
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S289P
S289P
850nm.
20-May-99
S289P_
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LSE B3
Abstract: CLT2164 CLT2165 CLT6181 T018
Text: m MDE D 30 0001005 0 O S E N I FASCO INDS/ SENISVS T 4 l-c, CLT6181 CLT2164 CLT2165 Silicon Planar Epitaxial Phototransistors ±. 0 0 7 H - . I8 3 D IA U WINDOW I ] ± l0 ,0 *1 t . o u K .040*1 I A 4 7 Ol A I I_ [ G E N E R A L D E S C R I P T I O N — T h e C la ir e x C L T 6181,
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CLT6181
CLT2164
CLT2165
CLT6181,
CLT2164,
CLT2165
250mW
i83dia-
70-tn
LSE B3
T018
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SFH350F
Abstract: b733 Appnote40 SFH350 SIEMENS Phototransistors fiber optic phototransistor SFH350FA
Text: SIEMENS AKTIENGESELLSCHAF 47E D • S IE M E N S ÔB3StiDS □ 0 2 7 3 3 ci 1 « S I E G SFH350 WITH IR FILTER SFH350F PLASTIC FIBER OPTIC PHOTOTRANSISTOR DETECTOR 'T 1 C> Preliminary Data Sheet Package Dimensions in Inches mm 024 (0 61 FEATURES Maximum Ratings
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B733ci
SFH350
SFH350F
SFH350F)
SFH350)
EH4001
fl23SbOS
00S7340
SFH350F
b733
Appnote40
SFH350
SIEMENS Phototransistors
fiber optic phototransistor
SFH350FA
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Untitled
Abstract: No abstract text available
Text: P H O T O IN T E R R U P T E R S ^ ^ J R e f le c t ty p e SG-105F S G -1 0 5 FB , a fc fl- S b t S fT T - K fc , S i t 7 ^ DIMENSIONS U n it :m m h h5> y7$ F-fe>-y-T\ x » ia i''a * t t 0 The SG-105F reflective sensor combines a G aA s IR E D with a high-sensitivity phototransistor in a super-mini
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SG-105F
SG-105F
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