ns601680
Abstract: R4341 compal Compal Electronics Ali 3601
Text: A B C D E 1 1 LA-1421 Schematics Document Ver1.0 2 2 uFCBGA/uFCPGA for Celeron/ Coppermine-T and Tualatin CPU Almador-M 830-MG + ICH3 + VCH 3 3 4 4 Title T H I S S H E E T OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL
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LA-1421
830-MG)
M/BLA-1421
Nin11
1000P
10Ohm
ns601680
R4341
compal
Compal Electronics
Ali 3601
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GL3220
Abstract: Compal Electronics Ali 3601 compal k5w12 LA-1421 fdv301
Text: A B C D E 1 2 1 LA-1421 Schematics Document uFCBGA/uFCPGA for Celeron/ Coppermine-T and Tualatin CPU Ver1.0 2 Almador-M 830-MG + ICH3 + VCH 3 3 4 4 Title Compal Electronics, inc. SCHEMATIC, M/B LA-1421 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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LA-1421
830-MG)
10Ohm
GL3220
Compal Electronics
Ali 3601
compal
k5w12
fdv301
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Hartmann Braun
Abstract: Hartmann DC GLASS FUSE
Text: Data Sheet 10/72-1.35-1 EN Melody CBO 10 - Binary output module Features / application • • • • • • 24 binary outputs with enclosed relays NO contacts Current carrying capacity of the relays: max. 1 A Channel-by-channel isolation of the outputs
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Hartmann Braun
Abstract: Hartmann
Text: Data Sheet 10/72-1.37-1 EN Melody CBO 21 - Binary output module Features / application • • • • • • 40 binary outputs P-switching Current carrying capacity of the power outputs: I = 110 mA with U = 24 V Switching states of the binary outputs when lamps or LEDs are activated:
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Hartmann Braun
Abstract: Hartmann 72199 80011 EN07
Text: Data Sheet 10/72-1.36-1 EN Melody CBO 20 - Binary output module for optical/acoustic alarm unit Features / application • • • • • • 40 binary outputs (P-switching) Current carrying capacity of the power outputs: I = 110 mA with U = 24 V Switching states of the binary outputs when lamps or LEDs are activated:
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Hartmann
Abstract: Hartmann Braun 721324 Hartmann Braun ex ABB CI 120
Text: Data Sheet 10/72-1.33-1 EN Melody CBI 22 Ex - Binary input module Features / Applications • • • • • • • • 32 binary inputs divided into two groups each with 16 inputs Process current circuits in accordance with EN 50020 with type of protection EEx ib IIC
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Hartmann Braun sensor
Abstract: Hartmann Braun hartmann 4 wire proximity
Text: Data Sheet 10/72-1.46-1 EN Melody CBC 11 - Output module - control Features / Application Figure: Block diagram of the module CBC 11 • • • • • • • 35 P-switching power outputs 14 N-switching power outputs 48 binary inputs 15 supply outputs for binary sensor
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Hartmann Braun
Abstract: hartmann
Text: Data Sheet 10/72-1.32-1 EN Melody CBI 21 Ex - Binary input module Features / Applications • • • • • • • • 32 binary inputs divided into two groups each with 16 inputs Process current circuits in accordance with EN 50020 with type of protection EEx ib IIC
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tl741
Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
Text: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic
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10S11N
10S11N/F
15CAC/F-CD/2-12
--15S14/GR/CL
15T10
20T61/2DC/F
20T61/2/F
25CAC
--25CAC-CD/2-120
25G181/2/W
tl741
VEL-4P32-RH-TP
sodium vapor lamp
Magnetek ballast
F32T8
transistor ballast 1000W
VEL-3P32-RH-TP
13w cfl circuit
D835 transistor
PHILIPS T8 MAGNETIC BALLAST
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Hartmann Braun
Abstract: 4 wire proximity hartmann hartmann and braun
Text: Data Sheet 10/72-1.31-1 EN Melody CBI 20 - Binary input module Features / Applications • • • • • • 32 binary inputs divided into two supply groups each with 16 inputs Signal recording with 1 ms time resolution Monitoring of module Central galvanic separation of system inputs
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Untitled
Abstract: No abstract text available
Text: KT234520 Transistors Bipolar Independent Transistor Power Module Circuits Per Package2 Isolated Case Y/N Yes V(BR)CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)200 Absolute Max. Power Diss. (W)830 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.10 @I(C) (A) (Test Condition)200
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KT234520
NumberTR00600005
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830MG
Abstract: 82830MG intel 830 STR d 5441 830M Chipset DRC encoder 153 121 - 256 a19 d18 hue nv 82830 830m design guide lcd gba
Text: R Intel 830 Chipset Family: 82830 Graphics and Memory Controller Hub GMCH-M Datasheet January 2002 Order Number: 298338-003 ® Intel 830 Chipset Family R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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625-ball
830MG
82830MG
intel 830
STR d 5441
830M Chipset
DRC encoder 153 121 - 256
a19 d18 hue nv
82830
830m design guide
lcd gba
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Untitled
Abstract: No abstract text available
Text: Surface Mount Bandpass Filter 50Ω CBP-840C+ 790 to 890 MHz The Big Deal • Excellent Rejection • Low passband Insertion Loss • Miniature shielded package CASE STYLE: MP1766 Product Overview CBP-840C+ is a ceramic-coaxial-resonator based bandpass filter in a shielded package fabricated using SMT technology. This filter offers outstanding close in rejection, low insertion loss and high power handling for use in aviation,
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CBP-840C+
MP1766
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Untitled
Abstract: No abstract text available
Text: Surface Mount Bandpass Filter CBP-840C+ 50Ω 790 to 890 MHz The Big Deal Excellent Rejection Low passband Insertion Loss Miniature shielded package CASE STYLE: MP1766 Product Overview CBP-840C+ is a ceramic-coaxial-resonator based bandpass lter in a shielded package fabricated using SMT technology. This lter offers outstanding close in rejection, low insertion loss and high power handling for use in aviation,
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CBP-840C+
MP1766
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25t65
Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
Text: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221
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100/300/W
100/300W
1000PAR64Q/MFL
1000PAR64Q/NSP
1000PAR64Q/WFL
1000T3
1000T3Q/P/CL
00-90A/99EW
25t65
tl741
FBT Hr
f8t5
bu 25200
F20T12
270033
TL835
F28T5
TL830
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Untitled
Abstract: No abstract text available
Text: S G S— THOMSON 71C.D |ï 7*321537 0004050*2 | THOMSON SEKjîiCOrJDUCTORS_ 7 ~'33-ô 130 . 830 MHz class C for FM mobile applications PACKAGE TŸPE SD SD SD SD SD 1134-5 1080-2 1115-2 1012-4 1135-3 ' .280 4LSL B) XO-72 SL TO-117SL .280 4LSL (B)
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XO-72
O-117SL
CB-301J
CB-4001
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828BD
Abstract: BD NPN transistors BD 826 NPN
Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60
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00142bQ
828BD
BD NPN transistors
BD 826 NPN
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2SC830
Abstract: JE33 2SB551
Text: 2SB551H y ' - ì> PNP 2SC 830 _ t =1 > 7 U SILIC O N PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER Complementary pair w ith 2 S C 8 3 0 ® * > $ 'J B.Omax. 10.0 ± 0.5 -1.8max. 1.6typ) 1. •< — X : B ase 2 . x î •/9 • E m itte r 3 . 3 1 - ^ : C o lle c to r
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2SB551H
2SB551
2SC830
Te-25
2SB551®
2SB55K0)
2SC830
JE33
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SFT8200
Abstract: No abstract text available
Text: preliminary Data Sheet SFT8200 10 AMP RADIATION TOLERANT PNP TRANSISTOR 14 830 Valley V iew Avenue La M irada. California 9 0 6 3 8 100 VOLTS 2 1 3 9 2 1 -9 6 6 0 T W X 9 1 0 -5 8 3 -4 8 0 7 FAX 2 1 3 -9 2 1 -2 3 9 6 CASE STYLE W JEDEC TO—5 FEATURES •
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SFT8200
150MHz
150ns
500mAdc)
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F483
Abstract: No abstract text available
Text: BF483 BF485 BF487 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-92 package and intended fo r use in video ou tput stages in black-and•white and in colour television receivers. Q U IC K R E F E R E N C E D A T A BF483 BF485 BF487 v CBO max.
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BF483
BF485
BF487
BF487
F483
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L-1503GD
Abstract: L-1503ID L-1503YC L-1503YD
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C BeTO AM O Abl □ 5 MM 6 e 3 KpO M KM flw aM e ip : 5 mm np0M3B0flMTenb : Kingbright Cwna CBeTa yKa3aHa npM 10 m A. Kofl: L-1503ID L-1503GD L-1503YD L-1503YC I^BeT CBeneHMfl [h m ] X KpaGHHM
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o63opa
L-1503ID
L-1503GD
L-1503YD
L-1503YC
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IRF 850
Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400
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transistors BC 543
Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,
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Q62702-D1303
Q62702-D13Q4
Q62702-D1179
Q62702-D1257
Q62702-D1307
Q62702-D1308
Q62702-D61
Q62702-D1312
Q62702-D1313
Q62702-D1238
transistors BC 543
BD 104 NPN
BC827
BD 104
transistors d 826
bc 734
82s83
BC 828
BD 541
bc825
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TCA 150
Abstract: TCA830SR TCA150 amplificateur BF amplificateur BF TCA CIL 108 TCA150NB tca 830 AF 109 R amplificateur BF tca 150
Text: fijß 40 CB-108 -V CB-135 H0- CB-109 CB-155 AF amplifiers continued Amplificateurs B F (suite) A p p licatio n s T yp e S u ffix Case P rincip al characteristics Ap plicatio n s Type Suffixe B oîtie r Caractéristiques principales ^ 250^ C IL 76 Page am b
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CB-108
CB-135
C6-109
CB-155
CB-108
CB-109
CB-155
TCA 150
TCA830SR
TCA150
amplificateur BF
amplificateur BF TCA
CIL 108
TCA150NB
tca 830
AF 109 R
amplificateur BF tca 150
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