Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung
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T 358 N 1600
Abstract: 1100 A 4600
Text: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung
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2kva ups circuit diagram
Abstract: No abstract text available
Text: vacon nxp/c ac drives user manual vacon • 1 TABLE OF CONTENTS Document ID: DPD00890B Revision release date: 9.10.2014 1. SAFETY .4 1.1 1.2 1.3
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DPD00890B
PT100
24-hour
2kva ups circuit diagram
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cr 6850 t
Abstract: T 698 DIN 1445 l 0380 T188F
Text: Phase Control Thyristors Type VDRM VRRM V ITRMSM ITSM A kA 600.1800* ∫i²dt A²s 10ms, 10ms, tvj max tvj max *10³ VDSM = VDRM VRSM=VRRM +100V T 86 N Netz-Thyristoren 200 2 20 ITAVM/tc V TO A/°C V 180° el sin tvj = tvj 86/85 1,00 max rT (di/dt)cr tq
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k7815
Abstract: K7630
Text: These units can be manufactured and tested to MIL-T-27/358. Contact factory for price and delivery information and appropriate parts numbers MIL-T-271358-01 thru MIL-T-271358-123 . PICO PA ST N UM BER SPECIFICATIONS • MIL.T-27:.
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MIL-T-27/358.
MIL-T-271358-01
MIL-T-271358-123)
MIL-T-27,
TF5S21ZZ
k7815
K7630
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Semikron sk 51
Abstract: nr. 9181 semikron skiip 83 SKP24 SKiiP2 skiip6 skiip 84 p1003 SK 618
Text: s e MIKRDN in n o v a tio n + service integrateci intelligent power subsystems Easy paralleling • 2, 3 o r 4 2 -p a c k halfbridge => m a x .1600 A rms o u tp u t current • hom og en ou s current d istrib u tio n Modular power section • 2 -p a c k (halfbridge)
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2T908A
Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Text: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,
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T-0574D.
30Eiaa
Coi03nojiH
2T908A
2T602
2T907A
KT604
1HT251
1T813
2t903
KT920A
PO6 115.05
KT117
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Untitled
Abstract: No abstract text available
Text: E U P EC SEE D • 34032=17 0 D D Ü 7 SS TÜ3 « U P E C T 3 5 8 N 7 lypenreihe/iype ränge T358N 400 * 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDRM, VrrM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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T358N
0000A37
T-91-20
D00Dfl3Ã
5x315
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TT308
Abstract: eupec dd 31 n 12 l T235N
Text: tUHEC T235N SEE D • 34032^7 000073S IIS ■ U P E C ^ 2 3 - /9 Typenrelhe/iype range_ T235N_ 1600_ 1800_ Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm >Vrrm Periodische Vorwärts-und
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T235N
000073S
T235N_
T-91-20
5x315
TT308
eupec dd 31 n 12 l
T235N
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SF500EX26
Abstract: SF500U26 thyristor tt 250 BA 250G SF500U
Text: THYRISTOR S F 5 SILICON DIFFUSED TYPE U , Y , E X 2 6 H IGH P OW E R C O NT R OL A PP LI C A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage : VpR^-. Repetitive Peak Reverse Voltage : Vrrm | •¿~0b.2±O.'¿ -1600 - 2500V . Average On-State Current
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00V//xs
SF500EX26
SF500U26
thyristor tt 250
BA 250G
SF500U
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Untitled
Abstract: No abstract text available
Text: Phase control thyristors Type V drm It r m s m It s m /¡2dt It a v m ^ c V TO rT (di/dt)cr tq (dv/dt)cr typ D IN V gt Ig t R t h JC tvj = 25 °C tvj = 180 °e l IE C 747-6 25 “ C sinus V/ns V mA °c/w 1.4 150 0.3 tvj max Outline V rrm V d sm = V q rm V r sm
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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CON-46
O-104
14-Lead
16-Lead
12-Lead
16-Lead
O-220AB
1N5411
npn transistor RCA 467
CD4004T
CA3051
CD4001D
40468A
RCA 40822
40664 SCR
rca 40583
2N5756
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IC 7476
Abstract: No abstract text available
Text: EUPFC blE D • 3 4 G 3 2 T 7 0 0 0 1 3 2 4 bT3 * U P E C Phase control thyristors Itsm / ¡ 2dt Itavm/ I c rT di/dt cr (d v /d t)cr V gt I gt RthJC t»¡ = i I trm sm " V drm ê Type tv¡ max DIN typ. IEC 747-6 DIN IEC 747-6 tvj = 25 °C tvj = 25 “C 180 °el
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34G32T7
IC 7476
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T 358 N 1600
Abstract: t 250 n 1200 245000 IC 7476 T31N
Text: EUPFC Phase control thyristors V d sm V rsm It r m sm V drm = Vrrm + 100 V V A Itsm /¡2dt Itavm/Ic 10 ms, 10 ms, tvj max tvj max 180 °el sin. A A2s A/°C di/dt cr (dv/dt)cr Vgt Ig t RthJC t»i = tvj max DIN typ. IEC 747-6 DIN IEC 747-6 tvj = 25 °C tvj =
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34G32T7
T 358 N 1600
t 250 n 1200
245000
IC 7476
T31N
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e20d
Abstract: T510S
Text: Fast thyristors Type It r m s m V drm V f i2dt N W m^ c V T0 It (di/dt)cr (dv/dt)cr V st I gt R th J C = Vrrm + 100 V v rsm DIN DIN I EC 747-6 tvj = tvj = 25 °C 25 °C 180 “el sinus V mA °C/W °c A V 200 400 50 2 500 500 1000 200 0,108 140 9 10 m s, 180 °el
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T-290 eupec
Abstract: el 509 T188F T510S 3403SC17 00G132
Text: Type V drm It r m s m Its m 3 4 0 3 S C17 00G132Ö blE D EUPEC Fast thyristors BMT M U P E C / i 2d t Itavm ^ c V TO rT ( d i/d t) cr ( d v /d t)cr V gt Iqt RfhJC DIN IEC 747-6 tyj = 25 °C tVj = 25 °C 180 ”el sinus V mA °C/W °c = 50 2 = 500 = 500 =1000
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3403SC17
00G132Ã
T-290 eupec
el 509
T188F
T510S
00G132
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st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech nician and yet economically meet replacement needs of the wide variety of entertainment equipment
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Sylvan58MC
09A001-00
66X0003-001
50746A
68X0003
68X0003-001
T-E0137
93B3-3
93B3-4
st178
diode E1110
CK705
ecg semiconductor replacement guide
CS1237
ME1120
TE1088
1N942
1N733A
Delco DTG-110B transistor
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T188F
Abstract: T510S T-290 eupec
Text: EUPEC F as t thyristors Type V drm V It r m s m It s m / i2dt 10 ms, tj max kA A2s D • 3 4 Q 3 S t17 D0G13SÖ di/dt cr (dv/dt)cr tv j max DIN IEC 747-6 Itavm/Ic V(TO) rT 10 m s, 1 80 "Bl tv | = t,j = tv , max s in . t ’.'i max E4T ■ U P E C V gt Iq t
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34Q3Sti7
D0G13SÃ
T188F
T510S
T-290 eupec
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T 358 N 1600
Abstract: T358N
Text: E U P E C S E E D • 3 4 0 3 2 = 1 7 0 D D Ü 7 S S T Ü 3 « U P E C T 3 5 8 N 7 lypenreihe/iype ränge T358N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDRM, VrrM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom
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T358N
T 358 N 1600
T358N
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T 698
Abstract: No abstract text available
Text: -as" :hyris:ors "ype V drm Itrm sm Its m / ¡ 2dt ^TAVM^C V TO rT (di/dt)cr *q (dv/dt)cr Vqt Igt RthJC DIN IEC 747-6 tvj = 25 “C tvj = 25 °C 180 °el sinus V mA °C/W °c tvj max Outline Vrrm 10 ms, 10 ms, tvj max tvj max 180 °Bl sin. t,j = tvj ma, tvj =
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diode 931 p 7
Abstract: A198S
Text: 4 ^ • EUPEC Fast asymmetric thyristors Type V drm V dsm / ¡ 2dt V rrm = VDRM V blE D ■ 34035^7 □□□1330 TT7 ■ UPEC di/dt cr V(TO) V) (dv/dt)cr O utline ( V r r m ( c j) tp = 10 ms, 10 ms, 1 |XS tv i max tv , max sin. V kA A2s A/°C tvj = »vi =
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314D3ET7
diode 931 p 7
A198S
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D1201S
Abstract: T 358 N 1600 ilr 645
Text: Fast rectifier diodes Type Vrrm V rsm If r m s m = V R RM Ifsm /¡2dt If a v m ^ c V TO rT V Ir m Vr f 100 V1) A < 0 ,5 R |h J C t. max ty| = tv; ma* 180 °el •F = if-AVM d if /d t = 5 0 A ' ms sin m £2 A °c/w °c 10 m s, 10 ms, tv, = tv, ma« tv, ,
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D1169S
D1170S
D1201S
D1408S
D1461S
D1201S
T 358 N 1600
ilr 645
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