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    T 250 TRANSISTOR Search Results

    T 250 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    T 250 TRANSISTOR Price and Stock

    Phoenix Contact NLC-050-24DC-OUT-SIM-T

    Card to simulate transistor outputs on a Nanoline base unit
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NLC-050-24DC-OUT-SIM-T
    • 1 $86.72
    • 10 $73.25
    • 100 $68.27
    • 1000 $67.25
    • 10000 $67.25
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    T 250 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2922 SANKEN

    Abstract: MJ15024 MJ15025 BDY37A SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max hFE *T on ON) Min (Hz) 140 140 140 140 140 140 145 150 160 160 200 200 200 200 250 250 200 250 125 125 15 15 15 15 15 15 15 15 80 80 125 15 Max k)N Max (A) (8)


    Original     		PDF MJ3773 2N5631 2N6031 BDY37A TRW6259 2N6259 MJE4343 2SC2922 SANKEN MJ15024 MJ15025 SDT604 sanken 2sc2922 sanken 2sa1216 STX10 2SA1117 SDT60 MRF492A

    FCD830

    Abstract: B 511 transistor diode 513 FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830A
    Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>


    OCR Scan     		PDF FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82Saturation FCD830, FCD830 B 511 transistor diode 513 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830A

    FCD830C

    Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830B
    Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>


    OCR Scan     		PDF FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82Saturation FCD830, FCD830C FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A FCD830B

    BT3904

    Abstract: BC850B2
    Text: NPN Transistors NPN S ilicon T ransisto rs TO-236 Plastic Package Type Marking Code V ceo hFE Volts 100-250 160-400 250-600 100-250 160-400 250-600 110-220 200-450 110-220 200-450 420-800 110-220 200-450 420-800 200-450 420-800 200-450 420-800 fr I ces VcEsat


    OCR Scan     		PDF O-236 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BT3904 BC850B2

    FCD820D

    Abstract: FCD820B FCD820 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A
    Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>


    OCR Scan     		PDF FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82t FCD820 FCD820D FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A

    FCD810

    Abstract: FCD810C FCD810D FCD820B FCD820C FCD825A FCD825D FCD830 FCD830A FCD830C
    Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>


    OCR Scan     		PDF FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD82he FCD810 FCD810C FCD810D FCD820C FCD825A FCD825D FCD830 FCD830A FCD830C

    B 511 transistor

    Abstract: FCD810C FCD810D FCD820B FCD820C FCD825 FCD825A FCD825D FCD830 FCD830A
    Text: 1-16 Max Ratings @ T^ = 25°C Coupled Characteristics Transistor >C v CEO fflA V Vr V If mA 20 3.0 60 Diode Device No. Output Pd mW FCD810<1> Trans 250 25 FCD810A<1> Trans 250 25 20 3.0 FCD810B<’> Trans 250 25 20 3.0 FCD810C« Trans 250 25 20 3.0 FCD810D<1>


    OCR Scan     		PDF FCD810B< FCD810CÂ FCD810DÂ FCD820B FCD820CÂ FCD820 B 511 transistor FCD810C FCD810D FCD820C FCD825 FCD825A FCD825D FCD830 FCD830A

    NSDU07

    Abstract: bc640 to237 2n6555 T0202 2M6718 2N4033
    Text: bflE T> m t.SD113D □OB'ISIS STT • N S C 5 NATL SEMICOND DISCRETE Devices VCE0(su*t) (Wilts) Min 100 PNP NPN 2N6553 2M6718 80 2N6730 NF (dB) Max Pd (Amb) Package (mW) Max Min Max 1000 80 250 50 75 100 T0-202(55) 1333 1000 50 250 250 50 200 TO-237{91 )


    OCR Scan     		PDF SD113D 2N6553 2M6718 NSDU07 2N6730 T0-202 O-237 bc640 to237 2n6555 T0202 2N4033

    PN222A

    Abstract: 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A
    Text: NATL SEMICOND DISCRETE SEE D • bS0113Q 0D37773 S ■ T -Z 7 -0 Ì NPN General Purpose Transistors by Ascending Vceo (continued) lc /V < * (m A /V ) Ft (MHz) Min 600 120 300 120 300 300 300 10/10 150/10 150/10 150/10 150/10 50/2.0 150/10 700 250 250 250


    OCR Scan     		PDF bS0113Q 0D37773 PN3566 PN3641 PN3643 PN4141 PN4142 PN5449 TN2219 2N1613 PN222A 2N2222A TO-92 2N3904 TO-92 type to236 2N2222A

    Untitled

    Abstract: No abstract text available
    Text: LM H6601 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Texa s In s t r u m e n t s Literature Number: SNOSAK9D t - . * O cto b e r20 Q w Semiconductor LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Am plifier with Shutdown Features


    OCR Scan     		PDF H6601 LMH6601/LMH6601Q LMH6601/LMH6601Q LMH6601

    SILICON TRANSISTOR CORP

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430 SDN22302 SDN22311
    Text: 88D 00799 D T '3 3 -13 flfl DE |fl554D22 D D D O ? ^ =] 8254022 S I L ICON TRANSISTOR CORP S I L I C Ò T TRANSISTOR CORP VCEO SUS Polarity lc Max Am ps SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 NPN NPN NPN NPN NPN 5.0 5.0 5.0 5.0 5.0 150 250 150 250 350


    OCR Scan     		PDF flaS402E SDN22301 SDN22302 SDN22311 SDN22312 SDN22313 SRSP4296 SRSP4297 SRSP4298 SRSP4299 SILICON TRANSISTOR CORP NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn 331 STS410 STS660 free pnp and npn transistor STS409 STS430

    bf506

    Abstract: BF970A
    Text: 50 RF/Microwave Devices Tuner Transistors co n t. Ratings Type No. Pkfl. Vcio (V) TO-92 SOT-23 SOT-23 SOT-23 TO-92 SOT-37 SOT-37 20 35 20 30 20 35 20 f î (mA) (mW) 25 30 25 25 25 30 30 250 250 300 300 250 160 140 : (MHz) (dB) Characteristics @ f (MHz) G um


    OCR Scan     		PDF BF506 BF569 BF579 BF660 BF926 BF970A BF979 OT-23

    da 3309

    Abstract: amplificateur de son 3v self choc 2n3309 2522N signaux SELF DE CHOC
    Text: 2 N 3309 NPN SILICON TRANSISTORS, Ei IT A X IA L PLANAR TRANSISTORS NPN SILIC IU M , PLAN A R E P IT A X IA U X • Power amplification at 250 MHz A m p lifica tio n de puissance à 250 MHz v CBO 50V v CEO 30 V O *T Gp 300 MHz min. 2W min. 250 MHz 7 dB min.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -OCTOBER 1995 £ _ CO M PLEM ENTARY T Y P E - BFN17 PARTMARKING DETAILS - DD ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V cbo 250 V V CEO 250 V V ebo 5 V mA PARAMETER SYMBOL Collector-Base Voltage


    OCR Scan     		PDF BFN17 lc-10m 300us. FMMTA42

    A 933 S transistors

    Abstract: A933S A830-S a830s A854S 2sc low noise 2SC1645 933LN 2SD 92 M a1515s
    Text: 7 T r a n s s tors ? TO-92, S PT (TO-92S Types Type Vhk <V) Function lc (mA) IGMa. (mA) 2SA 1137 -8 0 -1 0 0 Low rb b' H ead Am p 40 — 300 — 1 2 0 -5 6 0 -6 -2 -3 0 0 — 250 — 1 2 0 -5 6 0 -6 -1 0 300 — 250 250 120 - 560 6 10 -5 0 — 250 250 82 - 270


    OCR Scan     		PDF O-92S) 2SA825 933LN 2SC1740 1740LN 2SC2389 2SC2808 2SC1741 2SC2872 2SC3359 A 933 S transistors A933S A830-S a830s A854S 2sc low noise 2SC1645 2SD 92 M a1515s

    Untitled

    Abstract: No abstract text available
    Text: • 7 ^ 2 ^ 2 3 7 Q Q M b 3 G S T3Ö « S f i T H STP6N25 STP6N25FI fZ T SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI V d ss R d S o ii Id 250 V 250 V < 1a < 1 SÎ 6 A 4 A . TYPICAL RDS(on) = 0.7 Q


    OCR Scan     		PDF STP6N25 STP6N25FI 004b311 STP6N25/FI

    2N8211

    Abstract: 2NS298 2n830 2N8300 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3736
    Text: Power Transistors TO-66 Case T Y P E NO. NPN PNP •c Pd A M AX (W ) ie (A) BV C b o (V) bvCEO MIN MIN MIN M AX 90 90 250 375 500 250 325 60 60 80 80 80 100 50 40 70 60 90 80 500 350 500 500 40 60 80 80 80 100 100 275 350 400 50 90 140 55 55 175 250


    OCR Scan     		PDF 2N3054 2N3054A 2N6049 2N3583 2N6420 2N3584 2N6421 2N3585 2N6422 2N3738 2N8211 2NS298 2n830 2N8300 2N3054 2N3736

    H11A1

    Abstract: H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255 MCT26
    Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan     		PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA230, MCA255 MCA255 MCT26

    phototransistor til 33

    Abstract: TIL112 TIL111 Til 160 h11a H11A1 H11A2 H11B1 TIL116 H11D2
    Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan     		PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 TIL114, TIL11S, phototransistor til 33 TIL112 TIL111 Til 160 h11a TIL116

    TIL111 equivalent

    Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1
    Text: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan     		PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 TIL113 TIL119 TIL111 equivalent TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113

    1431 transistor equivalent

    Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
    Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan     		PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA20 1431 transistor equivalent MCA255

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 5249 Thick Film Hybrid 1C _STK401-250 S A ßro AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.08%) Overview Package Dimensions T he S T K 401-250 is a 2-channel audio pow er am plifier IC that supports 6/3£2 output load im pedances. It is fully pin


    OCR Scan     		PDF STK401-250 STK400-X00 STK401-X00 STK401-250] 0021D1D

    Untitled

    Abstract: No abstract text available
    Text: / T L in t A B ^ > 7 LT1351 TECHNOLOGY 250|iA, 3MHz, 200V/^s O p era tional A m plifier FCRTUR6S DCSCAIPTIOn • 3MHz Gain Bandwidth ■ 200V/jos Slew Rate ■ 250|iA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor­


    OCR Scan     		PDF LT1351 00V/jos LT1351 254mm) LT1352/LT1353 00V/hs LT1354 12MHz, 00V/jisQ 551fl4bfl

    MCT2E equivalent

    Abstract: mct2e MCT2E connection diagram ic MCT2e Til 160 TIL111 equivalent MCT2E characteristics TIL112 equivalent TIL112 MCT26
    Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60


    OCR Scan     		PDF H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCT26 MCT26 MCT2E equivalent mct2e MCT2E connection diagram ic MCT2e Til 160 TIL111 equivalent MCT2E characteristics TIL112 equivalent TIL112