T-Connector
Abstract: No abstract text available
Text: Module no:1685097 LabelId:1685097 Operator:Phoenix 16:09:00, Donnerstag, 28. Juni 2001 RC-T./2BU1ST Z T-connector M 23 Nominal voltage [V] Nominal current [A] T-connector M 23, 19-position 150 8 / 10 T-connector M 23, 12-position 300 8 Description Phoenix Contact Elektronischer Katalog
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19-position
12-position
12/2BU1ST
T-Connector
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STK6966
Abstract: aatj
Text: r x ^ : SAfiYO i j . - X So. 1689 N O . 16 8 9 A 2270 £ Lrt>*-C < ti*' t x\ S T K 6 9 6 6 DC^E — 9 "X,. ' X '""x K ^ - f /s: «ft * A^iarEKl-tff'li/fc •;r.rttHiwiff *v*. • À7j*-7>'C7u-*m&£fV • t t f r t t t t f t J f t P I K l'. • 7 U - * ff Ihi«0 « l f W K A t ' > « c t '•
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STK6966
STK6966
aatj
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D I S C R E T E / O P T 0> 9097250 ¿Toshiba T O S H IB A ^ D IS C R E T E / O P T O 99D d ËT| 16894 T □ T 7 E S □ ODlbfiTM 1 | ~ D T -S S -l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 8 3 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA
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500nA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: dF TOSHIBA { D I SC RE TE /OPT O} 9097250 TOSHIBA DISCRETE/OPTO ^ /o ò h ìltt § T D T 7ES0 DülbflTD D TS^-ìj 99D 16870 T O SH IBA SEMICONDUCTOR F IE L D EFFEC T TR A N SISTO R Y T F 6 3 1 S IL IC O N TECHNICAL DATA N C H A N N EL.MOS T Y P E (T T -M O S I)
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500nA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TO SHIBA D I S C R E T E /OPTO TO SH IBA SEMICONDUCTOR TT DE § T D T O S O OOlbflfc.5 □ 99D 16862 F IE L D EFFEC T D” F 3 R-|/ TRA N SISTO R Y T F 6 2 1 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E (T T -M O S E )
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500nA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 ¿Tasìuha T O S H IB A “ñ D F l T D T V a S O 0Dlhfl30 fl 99D D IS C R E T E / O P T O 16830 D T ^ -l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 2 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS
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0Dlhfl30
103HAX.
500nA
250uA
00A/us
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VDS-10Vt
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } Tì ¡>I~| 10*17550 OOltñSt, b 1~~ 99D 16826 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR T O S H IB A F IE L D EFFEC T DT"BS'l3 TR A N SIST O R Y T F 4 5 3 S IL IC O N TECHNICAL DATA N CHANNEL HOS T Y P E ( 7 T -M O S 1 I )
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08SOMAX.
250uA
100nA
250uA
00A/ys
VDS-10Vt
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TÎ 9097250 TOSHIBA DISCRETE/OPTO DE | T m 7 2 S D 99D 16896 T O S H IB A SEMICONDUCTOR F IE L D EFFEC T D ~p- 3 e)-1 T R A N S IS T O R Y T F 8 3 2 S IL IC O N TECHNICAL DATA N C H A N N EL MOS T Y P E (Æ -M O S IE ) INDUSTRIAL APPLICATIONS
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250uA
00A/gs
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Untitled
Abstract: No abstract text available
Text: T O S H I B A -CDISCRETE/OPTOJ- 9097250 T O S H IB A ¿^oHuhn TÏ D IS C R E T E / O P T O »FI^DTVESD 99D 16892 DDlhñTa D T 3 S -II TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 8 3 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSE) INDUSTRIAL APPLICATIONS
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t50ChA
250uA
250uA
00A/us
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2SC4282
Abstract: 2SC1833 2sc372 TIL 729 2sc1707 2SC1548 2SC4641 2SC2999 2SC2550 2SC1628
Text: - m £ Type No. * 2SC 168&'"' * 2SC 1686 ^ 2SC 3687 2SC 1688 * 2SC 1689 * 2 SC 1706 % * 2SC 1707 H tt « Manuf. tö fô fé H a a T T T T 3£ SANYO 2SC4641 ^ TOSHIBA 2SC1815 T MATSUSHITA 2SC331ÌA 2SC1687 2SC2999 2SC1674 2SC535 2SC1674 2SC535 2SC2999 a 2SC2909
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2SC4641
2SC945
2SC33Ã
2SC2320
2SC1740
ZSC2999
2SC1675
2SC1342
2SC1S81
2SC2058
2SC4282
2SC1833
2sc372
TIL 729
2sc1707
2SC1548
2SC2999
2SC2550
2SC1628
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16803d
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOl Ti 99D 9097250 TOSHIBA <DIS C R E T E/ OP TO T O SH IB A SEMICONDUCTOR &àìhn De I^GTVESG F IE L D 16802 DGlbflDE 3 DT-S^-IB E F F E C T T R A N SIST O R Y T F 2 4 3 S IL IC O N TECHNICAL DATA N CHANNEL MOS TY PE T T -M O S I)
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250tiA
tf15ns
00A/us
16803d
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O} 9 0 9 7 2 5 0 T O S H IB A t » , / D eT 10^7550 D D l h ñ ñ 4 99D 168 84 (D IS C R E T E / O P T O SEMICONDUCTOR TOSHIBA D FI E L D E F F E C T T R A N S I S T O R Y T F 8 2 0 TECHNICAL DATA S I L I C O N N C H A N N E L MOS T YPE
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100nA
250uA
500ss
00A/us
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} T í D e I^G^SSO 9097250 TOSHIBA <DIS C R E T E / O P T O 99D 16844 T - 2 ? -/3 DDlbfl44 ñ J ~ D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SE) INDUSTRIAL APPLICATIONS
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DDlbfl44
500nA
250uA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: Co v e r t ap e t h i c k n e s s : 0, 0 51 Vi ew A HARTING l a b e l See d e t a i l Y C a r r i e r t ap e t hi ckne ss: 0,5 0 100 HUB 16 5 0 < a <180' y y y y y y y y y y y S y ^ y t D i r e c t i o n of u n r e e l i n g T r a i 1er 168 7 cavities empt y
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160V 30A TRANSISTOR
Abstract: power transistor 200V, 30A
Text: TOSHIBA { D I S C R E T E / O P T O 9097250 ¿Toshiba T O S H IB A TT < D IS C R E T E / O P T O > DE | l C H 7 a S D D01bflD4 7 |~~ 99D 16804 D T -3 q -\3 TOSHIBA FIE LD EFFECT TRANSISTOR YT F 2 5 0 SIL IC O N N CHANNEL MOS TYPE ff-M OS I SEMICONDUCTOR
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D01bflD4
250uA
250uA
00A/us
160V 30A TRANSISTOR
power transistor 200V, 30A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } 9097250 T O S H IB A D IS C R E T E /O P T O 99D 16880 D - T S C f- tf TOSHIBA FIELD EFFECT TRA N S I S T O R ¿foïhiba SEMICONDUCTOR Y T F 6 4 2 SIL I C O N N CHANNEL MOS TYP E TECHNICAL DATA (71 -MOS I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250uA
250uA
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2SC1681
Abstract: 2SC1681 npn 2SC1681BL 2SC168 transistor 2sc1681 2SC1681V 2sC 691 BH RV transistor 251C Produced by Perfect Crystal Device Technology
Text: ' U D > N P N X ^ 5 /? ;W B h 5 > ^ P C ILICON NPN EPITAXIAL TRANSISTOR T S Ä 2 s c 1681 (P C T U n i t i n mm O & « & £ * « « « ffl o Low N o i s e A udio s i m p l i f i e r A p p l i c a t i o n s ftififtET: v CE0 j d t ' S f t t f S / J ' S 1^0 :
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I0-100jtiA
I0-100itA
31StfWt
2SC1681
2SC1681 npn
2SC1681BL
2SC168
transistor 2sc1681
2SC1681V
2sC 691
BH RV transistor
251C
Produced by Perfect Crystal Device Technology
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ip13a
Abstract: No abstract text available
Text: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR ¿ToÀhìhn D e J t O T 7SSD D D l b ö E S T 99D TOSHIBA FIELD 16822 t r P S ^ - lZ ) EFFECT TRANSISTOR Y T F 4 5 1 SILICON TECHNICAL DATA N CHA N NE L MOS TYPE 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250uA
250uA
ip13a
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zo125
Abstract: z0127 AVH32 zo125 ma VH32 FPD87310 YO125 z0125 LH168M ZO128
Text: SHARP LH168M 384-output TFT-LCD Source Driver IC LH168M DESCRIPTION T h e L H 168M PIN CONNECTIONS is a 384-output T F T -L C D source 434 -PIN T C P driver IC which can simultaneously display 262 144 T O P V IE W colors in 64 gray scales. FEATURES • Number of LCD drive outputs : 384
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LH168M
LH168M
384-output
XO1-zo128
zo125
z0127
AVH32
zo125 ma
VH32
FPD87310
YO125
z0125
ZO128
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS
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DT-39-13
100nA
250uA
00A/us
TOSHIBA 1N DIODE
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Untitled
Abstract: No abstract text available
Text: FAST CMOS 20-BIT BUF F E RS IDT54/74FCT1 6827AT/BT/CT/ET IDT54/74FCT162827AT/BT/CT/ET FEATURES: DESCRIPTION: • C o m m o n features: The F C T 16827A T/BT/C T/ET and F C T 162827AT/B T/C T/ ET 20-bit butters are built using advanced dual metal CMOS technology. These 20-bit bus drivers provide high-performance bus interface buffering for wide data/address paths or
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20-BIT
IDT54/74FCT1
6827AT/BT/CT/ET
IDT54/74FCT162827AT/BT/CT/ET
6827A
162827AT/B
10-bit
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } Ti 99D 16816 9097250 TOSHIBA DISCRETE/OPTO> /Toihibti Ï eT I T D T 7 2 5 D GGlbfllh DT-^-lâ TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 4 2 SILICON N CHANNEL HOS TYPE TECHNICAL DATA (J2VM0SI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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-100nA
250ViA
250iJA
00A/ys
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amphenol 74868 ug
Abstract: UG-176 74868 UG176
Text: 83-168 NOTES: REV I S IONS DRAWING I. THIRD M A T E R I A L S OF C O N S T R U C T I O N : BODY - B R A S S , N I C K E L P L A T E D . ANGLE REV NO. D E S C R I P T I ON RELEASE PRO J. ADD S H E E T TO M F G . AND TOLERANCES ANGLES ± 1 ° NOT I CE - T h e s e d r a w i n g s , s p e c i f i c a f i o n s , or o t h e r d a t a I a r e , a nd r e m a i n
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08-Feb-00
08-Feb-00
176/U
\UHF\83-168
amphenol 74868 ug
UG-176 74868
UG176
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