DTIC 44-3x82.0 cvS
Abstract: No abstract text available
Text: Leclanché Capacitors Avenue de Grandson 48 1400 Yverdon-les-Bains, Switzerland Da t e n b l a t t / d a t a s h e e t Anwendung/Application: Kondensator für die Blindleistungskompensation AC capacitor for power factor correction Standards EN 60831-1/2, IEC 60831-1/2, VDE 0560-46/47
|
Original
|
PDF
|
660Vrms
44-3x82
-40/D
DTIC 44-3x82.0 cvS
|
DTIC 44-3x166.0 cvS
Abstract: No abstract text available
Text: Leclanché Capacitors Avenue de Grandson 48 1400 Yverdon-les-Bains, Switzerland Da t e n b l a t t / d a t a s h e e t Anwendung/Application: Kondensator für die Blindleistungskompensation AC capacitor for power factor correction Standards EN 60831-1/2, IEC 60831-1/2, VDE 0560-46/47
|
Original
|
PDF
|
44-3x166
25mm2
DTIC 44-3x166.0 cvS
|
6016C
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O N 日TEM ALTERATION I S S U E I DESCRIPTION ICompany n a m e changed CODE CAPACITANCE F ヰ L DIMENSIONS W H e1，e2 g TYPE E， H I H563) (X9 O . 056 ( 4 7 3 ) . t : O .1 3 . 3 t : . 3 . 15 : ! : . 1 O 48 . 8 t : .
|
Original
|
PDF
|
|
A409
Abstract: A102 A164 A191 A255 A294 A312 A347 A361 A450
Text: « 2 1 ^ 2 M # 10 0 fé I^ ê t t M A R U W A ^ — K # ^ 5344 Í E - ^ E Í 1 3 M (T E L « 21 ^ 2 M 5 ÄA 0561-51-0839) 21 ^ 3 3 E ^ if t lS ftjW E i^ ^ W - g ^ T f E « t ^ iT E V ^ c L S t o ^ f c \ iT E ^ « T f Ä ^ L T f c '^ t o E (1)4 4.^«ffi
|
OCR Scan
|
PDF
|
|
dl3008
Abstract: No abstract text available
Text: ST D E |t,4 2 7 S 2 5 6427525 O CD St^ fl | - N E C~ E L E C T R O N I C S INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATION SEC LASER DIODE ELECTRON DEVICE N D L3008 D A D .V D A P P L IC A T IO N A! G a A s D O U B L E H E T E R O S T R U C T U R E L A S E R D IO D E
|
OCR Scan
|
PDF
|
T-41-05
L3008
NDL300
J22686
dl3008
|
DIODE Z54
Abstract: Laser microphone NDL3008 nec laser diode J22686
Text: ST D E |t.4 2 ? S 2 5 6427525 □□□St.3T fl | - N E C~ELECTRONICS INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATIO N NEC LASER DIODE ELECTRON DEVICE NDL3008 DAD,VD APPLICATION AIGaAs D O UBLE HETERO S T R U C T U R E LASER DIODE SEP. 7 ,1 9 8 4 D E S C R IP T IO N
|
OCR Scan
|
PDF
|
b427SE5
T-41-05
NDL3008
NDL300
k457S2S
T-41-05
J22686
DIODE Z54
Laser microphone
NDL3008
nec laser diode
|
104S14
Abstract: No abstract text available
Text: _ ~5T 6427525 N E C E L E C T R O N IC S 59C IN C 05641 T-41-05 D t.457SES DD O S b 4 1 b ’ J ” TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE NDL3009 D AD , VD A PPLICA TIO N AIGaAs D O U B LE HETERO S T R U C T U R E L A S E R D IO D E SEP. 7,1984
|
OCR Scan
|
PDF
|
T-41-05
457SES
NDL3009
--VR-15V
J22686'
104S14
|
Untitled
Abstract: No abstract text available
Text: TH IRD AN GLE P R O JE C T I O N A L T E R A T I ON ISSUE ITEM CODE E C Q E 4 10 3 R T // 4 1 2 3 R ( ) T 4153R( ) T // 4 1 8 3 R ( ) T 4223R( ) T // 4 2 7 3 R O T 4 3 3 3 R ( )T // 4 3 9 3 R ( ) T // 4 4 7 3 R ( ) T // 4 5 6 3 R ( ) T // 4 6 8 3 R ( ) T
|
OCR Scan
|
PDF
|
4153R(
4223R(
104ROT
400VDC
8063M-J-E
|
str g 5551
Abstract: TC-6171 1j3z PA33
Text: -J — 5 7 . 1~ - — C o m p o u n d T ra n sisto r AN 1L3N i & i t F*3/ScPNpx 4# !J= 3> b ^ & o^ T Xi£t/t £ f t /t L T t a R i = 4 . 7 kQ, R 2 = 10 kQ B O — V W Ri t => > 7° >J / > 9 'J T i t ffl T" è 1 1 - 0 o A A1L3N ( T a = 2 5 °C ) II a u ? ?
|
OCR Scan
|
PDF
|
Cycled50
SC-43B
str g 5551
TC-6171
1j3z
PA33
|
STK-056
Abstract: stk056 stk power amplifier ic STK power amplifier STK 056 Sanyo STK ft 232 RL a3155 STK IC
Text: M U S • W S S fè/T E N T A T IV E SPECIFICATION STK-056 THICK FILM INTEGRATED CIRCUIT 20W min. A F 20 Watts min. AF Power Am plifier 2 Power Supplied *# Maximum R a tin g s/T a=25°C II Wc±mMw± g IE ^ Ìt ^ fe W^ m ÌfÉSSIWE ik m m ±32 V cC m ax
|
OCR Scan
|
PDF
|
STK-056
20kHz,
Rg-10kÃ
STK-056
stk056
stk power amplifier ic
STK power amplifier
STK 056
Sanyo STK
ft 232 RL
a3155
STK IC
|
2SA1612
Abstract: 2SC4180 LEMD
Text: NEC # > ' i; z i > h t . ? S ilic o n T r a n s is t o r iü O M 'h & W 'B T k I ' ' 4 7"'J y KICffl t U f t l t t . o L Ë a Æ ifL ^ ip g if^ ;* ; ë 2 .1 + 0 .1 1 .2 5 ± 0 .1 v >0 hFE : 600 T Y P . I c=1.0 mA) O 2SA1612 t 3 > 7‘ U / > 9 'i T ffM T"ë
|
OCR Scan
|
PDF
|
2SC4180
2SA1612
2SC4180
LEMD
|
Untitled
Abstract: No abstract text available
Text: t s m o in s ’on e Ni MVd a ##a ^ ± T B .8 5 CONTACT [0751 N o . 10 N 0 T E 1 . T H E I N S U L A T O R S U P P L I E D . T H E N 0 T E 2 . T H E CONTACT A S S E M B L E D O T H E R C O N T A C T No.1 P A R T S A S S E M B L E D WITH ARE IS C O N T A C T
|
OCR Scan
|
PDF
|
|
2SK464
Abstract: transistor 5555
Text: NEC M O S Field E ffe c t P o w e r T ra n s is to r m ^ T iv c x _2SK464 N ^ t i ' ^ ' ° 7 -M O S X > r *y 5 1 > 7 FET f t i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK464Ü , N b if f i t i , - f j u m p - t y —MOS F E T t \ X f y f v / i f t t t
|
OCR Scan
|
PDF
|
2SK464
2SK464Ã
2SK464
transistor 5555
|
2SK819
Abstract: jb 5531 T108 diode B3F TC-6273 nec p- channel 815 I-616
Text: MOS Field E ffe c t P o w e r T ra n s is to r 2SK819 N f t ^ 7 -M < X O S FET ' f i i f f l 2SK819 l i , N f + $ ; i y T t > m ¡ t> lË •y f- > # < , X f y f > ^ I t ^ Æ ftBm h P ' ' 0|7 - M OS F E T t L T Ü 9 , M a iÈ X ( M : mm -i DC-DC a > / < - ? H t l f t o
|
OCR Scan
|
PDF
|
2SK819
2SK819
jb 5531
T108
diode B3F
TC-6273
nec p- channel 815
I-616
|
|
|
Untitled
Abstract: No abstract text available
Text: DRAW I MS MADE !N THIRD ¿N G LE P R O JE C TIO N THIS DRAWING IS UNPUBLISHED. COPY RIGHT 13 RELEASED SY AMP FOR LOC PUBLICATION INCORPORA T E D . ALL AF I N TEPN A T 1 ONAL R IG H T S R E SE R V E D . D IS T REVISION S 50 D E SC R IPT IO N REDRAWN PER 0710-0569-95
|
OCR Scan
|
PDF
|
02-JUGz9
12122/dwg2
|
TYN 606 SCR
Abstract: tyn 406
Text: / I T * 7 / S G S -T H O M S O N [ f M œ id d M O K S T Y N 0 5 6 — > T Y N 1 0 0 6 SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 056 —> TYN 1006 Family of Silicon Con trolled Rectifiers uses a high performance glass passi
|
OCR Scan
|
PDF
|
400Hz
TYN 606 SCR
tyn 406
|
JACS-1754-4
Abstract: M34P75C4F 20D8 JAE connector avss0 JACS-1754 103-146
Text: V IÏ ' ON B DATE ÜS REV. 91/ L E 0 L P S 2 ON I MV H Q 12 . Nov. 2 0 0 8 DCN NO. 056919 S: M & DESCRIPTION THE L I S T COMPONENTS P A R T LY CHANGED K H DR. WAS S 1 APPD. * U APPD. K. MI YAMOTO T. KUME CH K. Y. WAT ANABE 1 . 5 DE T A . NOTE1. 2. APPLICABLE
|
OCR Scan
|
PDF
|
35sqit5
JACS-1754-4
CAC60
M34P75C4F
20D8
JAE connector
avss0
JACS-1754
103-146
|
Untitled
Abstract: No abstract text available
Text: ThomasÊBetts Two-Piece Connectors XD/P System GUIDE POSTS MIDPLANE/SHROUD MALE XD/P” CONNECTORS T O UW9571 M E6O90O a t e r ia ls Stainless steel, passivated Ordering Information CATiir- T GPK-05-3 GPK-05-3 r 13.21 .520 14.99 (.590) 142 to 2^1 (.056)
|
OCR Scan
|
PDF
|
UW9571
E6O90O
GPK-05-3
GPK-05-3
GPS-01-3
|
MT460
Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
Text: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E
|
OCR Scan
|
PDF
|
PWS10
SXISC06)
MT460
TI08
marking ti08
27ie
fg m 004 26 01
3905g
F0429
0429
|
Untitled
Abstract: No abstract text available
Text: V 1 ‘ ON %-n B të ft Z81720LPS eNiMVija -^#M m ( 2 .5 M I N DON DA T E REV. 31. Jan. 2005 ) ^ i ñ ^ DESCRIPTION NO. 056682 ADDED NEW DR. PRODUCT NO, fi. Ü£ CHK. AP PD. AP P D. K.INOUE |0— 1 .2| C O N N E C T O R O U T L I N E 9&m-s xju NOZZLE DIMENTION
|
OCR Scan
|
PDF
|
Z81720LPS
FF02B60
FF02B
FF02B*
|
82S123 programming
Abstract: PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608
Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO
|
OCR Scan
|
PDF
|
N82S23
N82S123
N82S126
N82S1-29
N82S27
N82S130
N82S131
N82S114
N82S115
82S123 programming
PJ 3139
prom 82S126
NCE8205
82s131 programming
Signetics 2513
SIGNETICS prom ttl 512
CM340
82s129 programming
Signetics 2608
|
SIGNETICS prom
Abstract: 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom N82S130
Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO
|
OCR Scan
|
PDF
|
N82S23
N82S123
N82S126
N82S1-29
N82S27
N82S130
N82S131
N82S114
SIGNETICS prom
82s129 programming
82S100
pin diagram of LED dot matrix display 9x9
Signetics TTL
MIMI Ti PROM programming procedure
Signetics 2513
82s131 programming
2048 bit 256x8 bipolar prom
|
marking TH
Abstract: 250VDCX
Text: THIRD ANGLE PROJEC T I O N | I TEM CODE E C Q E 2 10 3 R T // 2123ROT // 2153ROT // 2183ROT // 2223ROT // 2273ROT // 2333ROT // 2393ROT // 2473ROT // 2563ROT // 2683R ( ) T // 2823R ( ) T // 2 10 4 R ( ) T // 2 124ROT // 2 154ROT // 2 18 4 R ( ) T // 2224R ( ) T
|
OCR Scan
|
PDF
|
2123ROT
2153ROT
2183ROT
2223ROT
2273ROT
2333ROT
2393ROT
2473ROT
2563ROT
2683R
marking TH
250VDCX
|
Untitled
Abstract: No abstract text available
Text: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &
|
OCR Scan
|
PDF
|
iii25
|
