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    vpc3 c

    Abstract: RF transistor gain 20dB vpc3
    Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This


    Original     		SZM-3066Z SZM-3066Z ItDS110620 DS110620 SZM3066ZSQ SZM3066ZSR SZM3066Z vpc3 c RF transistor gain 20dB vpc3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This


    Original     		SZM-3066Z SZM-3066Z DS131017 SZM3066ZSR SZM3066Z SZM3066ZPCK-EVB1 SZM3066ZSQ PDF

    VPC3 C

    Abstract: vpc3
    Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This


    Original     		SZM-3066Z SZM-3066Z DS110620 SZM3066ZSQ SZM3066ZSR SZM3066ZPCK-EVB1 VPC3 C vpc3 PDF