vpc3 c
Abstract: RF transistor gain 20dB vpc3
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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PDF
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SZM-3066Z
SZM-3066Z
ItDS110620
DS110620
SZM3066ZSQ
SZM3066ZSR
SZM3066Z
vpc3 c
RF transistor gain 20dB
vpc3
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Untitled
Abstract: No abstract text available
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2 W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
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Original
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PDF
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SZM-3066Z
SZM-3066Z
DS131017
SZM3066ZSR
SZM3066Z
SZM3066ZPCK-EVB1
SZM3066ZSQ
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VPC3 C
Abstract: vpc3
Text: SZM-3066Z SZM-3066Z 3.3GHz to 3.8GHz 2W Power Amplifier 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMD’s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This
|
Original
|
PDF
|
SZM-3066Z
SZM-3066Z
DS110620
SZM3066ZSQ
SZM3066ZSR
SZM3066ZPCK-EVB1
VPC3 C
vpc3
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