"Power Diode"
Abstract: No abstract text available
Text: TO -22 0A B BYV410-600 Dual enhanced ultrafast power diode Rev. 2 — 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits High thermal cycling performance
|
Original
|
PDF
|
BYV410-600
O-220AB)
771-BYV410-600127
BYV410-600
"Power Diode"
|
Untitled
Abstract: No abstract text available
Text: Surface Mount SYM-12+ SYM-12 Frequency Mixer Level 7 LO Power +7 dBm 5 to 1200 MHz Maximum Ratings Operating Temperature Features • low conversion loss, 6.5 dB typ. • excellent L-R isolation, 50 dB typ.; L-I, 46 dB typ. • IF response to DC -40°C to 85°C
|
Original
|
PDF
|
SYM-12+
SYM-12
TTT167
2002/95/EC)
DC-1000
SYM-12
|
Untitled
Abstract: No abstract text available
Text: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 7 GHz FREQUENCY MHz MODEL NO. LO/RF IF fL-fU =JMS ASK-KK81 +7 dBm LO, up to +1 dBm RF CONVERSION LOSS dB LO-RF ISOLATION dB =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB Total Mid-Band Range m L M U L M U σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.
|
Original
|
PDF
|
ASK-1-KK81
ASK-2-KK81
JMS-11X
LRMS-30J
RMS-11F
RMS-11X
RMS-30
DC-600
DC-1000
DC-500
|
SYM-12
Abstract: TTT167
Text: Surface Mount SYM-12+ SYM-12 Frequency Mixer Level 7 LO Power +7 dBm 5 to 1200 MHz Maximum Ratings Features Operating Temperature Storage Temperature • low conversion loss, 6.5 dB typ. • excellent L-R isolation, 50 dB typ.; L-I, 46 dB typ. • IF response to DC
|
Original
|
PDF
|
SYM-12+
SYM-12
2002/95/EC)
TTT167
SYM-12
TTT167
|
FAR-F6KA-1G5754-L4AA
Abstract: SAFEA1G57KE0F00 EPCOS SAW Soldering Profile BGU7005 B9444 fm radio jammer FAR-F6KA-1G5754-L4AJ SAFEA1G57Kh0F00 LQW15A military jammer application
Text: BGU7005 SiGe:C Low Noise Amplifier MMIC for GPS Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description The BGU7005 is a Low Noise Amplifier LNA for GPS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU7005 requires only one
|
Original
|
PDF
|
BGU7005
BGU7005
OT886
FAR-F6KA-1G5754-L4AA
SAFEA1G57KE0F00
EPCOS SAW Soldering Profile
B9444
fm radio jammer
FAR-F6KA-1G5754-L4AJ
SAFEA1G57Kh0F00
LQW15A
military jammer application
|
J122 SMD TRANSISTOR
Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
|
Original
|
PDF
|
BLF6G22L-40BN
J122 SMD TRANSISTOR
BLC6G22L-40BN/2
800B
BLF6G22L-40BN
|
BU 0603
Abstract: 800B BLF6G15L 029-KW
Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
|
Original
|
PDF
|
BLF6G15L-250PBRN
BU 0603
800B
BLF6G15L
029-KW
|
Untitled
Abstract: No abstract text available
Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
PDF
|
PBSS4260QA
DFN1010D-3
OT1215)
PBSS5260QA.
AEC-Q101
|
Untitled
Abstract: No abstract text available
Text: TO -2 20F NXPS20S100CX Dual power Schottky diode 30 January 2013 Product data sheet 1. General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT186A TO-220F "full pack" plastic package.
|
Original
|
PDF
|
NXPS20S100CX
OT186A
O-220F)
|
TB-171
Abstract: No abstract text available
Text: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 7 GHz FREQUENCY MHz MODEL NO. LO/RF IF fL-fU =JMS ASK-KK81 +7 dBm LO, up to +1 dBm RF CONVERSION LOSS dB LO-RF ISOLATION dB =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB Total Mid-Band Range m L M U L M U σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.
|
Original
|
PDF
|
ASK-1-KK81
ASK-2-KK81
JMS-11X
LRMS-30J
RMS-11F
RMS-11X
RMS-30
DC-600
DC-1000
DC-500
TB-171
|
aly 2j
Abstract: LRMS-11A MCL RMS-2 ALY-3 ALY je
Text: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 4.3 GHz ALY u MODEL NO. FREQUENCY MHz LO/RF IF fL-fU LO-RF ISOLATION dB CONVERSION LOSS dB DC-400 DC-600 5.5 5.7 .15 .15 ASK-1-KK81 = ASK-2-KK81 1-600 1-1000 DC-600 DC-1000 5.58 6.79 .06 .10 7.0 8.0 8.5 9.8
|
Original
|
PDF
|
ASK-KK81
DC-400
DC-600
DC-1000
DC-500
ASK-1-KK81
aly 2j
LRMS-11A
MCL RMS-2
ALY-3
ALY je
|
Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - SYM-12 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: a. RF power, 50mW b. Peak IF current, 40mA print this page SYM-12 • For Surface Mount Environmental
|
Original
|
PDF
|
SYM-12
|
Untitled
Abstract: No abstract text available
Text: PHE13003C NPN power transistor Rev. 1 — 29 July 2010 Preliminary data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO-92 3 leads plastic package. 1.2 Features and benefits
|
Original
|
PDF
|
PHE13003C
|
Untitled
Abstract: No abstract text available
Text: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits
|
Original
|
PDF
|
BUJ302AD
OT428
|
|
|
Untitled
Abstract: No abstract text available
Text: TO -2 20A B NXPS20H100C Dual power Schottky diode Rev. 1 — 20 April 2012 Preliminary data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 TO-220AB plastic package.
|
Original
|
PDF
|
NXPS20H100C
O-220AB)
|
Untitled
Abstract: No abstract text available
Text: BLF7G22L-250PB; BLF7G22LS-250PB Power LDMOS transistor Rev. 01 — 16 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1.
|
Original
|
PDF
|
BLF7G22L-250PB;
BLF7G22LS-250PB
|
circuit radio
Abstract: Germanium power
Text: BGU7003W Wideband silicon germanium low-noise amplifier MMIC Rev. 1 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT886
|
Original
|
PDF
|
BGU7003W
BGU7003W
OT886
circuit radio
Germanium power
|
3590S-491-103
Abstract: 23n50 13N50
Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
|
Original
|
PDF
|
BLF6G15L-40BRN
3590S-491-103
23n50
13N50
|
Untitled
Abstract: No abstract text available
Text: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits
|
Original
|
PDF
|
BUJ303CD
OT428
Condition10
|
circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
|
Original
|
PDF
|
DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
|
Untitled
Abstract: No abstract text available
Text: BYQ30E-200 Dual ultrafast power diode Rev. 4 — 1 September 2010 Product data sheet 1. Product profile 1.1 General description Dual ultrafast power diode in a SOT78 TO-220AB plastic package 1.2 Features and benefits ̈ Fast switching ̈ Low thermal resistance
|
Original
|
PDF
|
BYQ30E-200
O-220AB)
|
Untitled
Abstract: No abstract text available
Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
|
Original
|
PDF
|
BLF6G15LS-250PBRN
|
Untitled
Abstract: No abstract text available
Text: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance
|
Original
|
PDF
|
BLF7G27L-200PB
|
Untitled
Abstract: No abstract text available
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
|
Original
|
PDF
|
BLF6G22L-40BN
|
