SMC - SY5120
Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based
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SY9000
SY3000
SY5000
SY7000
SMC - SY5120
SMC SY313
omron G71-OD16
SY7120
G71-OD16
SY340
431a1
diode sy
GVVZS3000-21A-2
19n marking 2 pin diode
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d1415
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
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MH64S72AVJG-5
208-BIT
864-WORD
72-BIT
MH64S72AVJG
72-bit
85pin
94pin
10pin
95pin
d1415
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MH32S72AVJA-5
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72AVJA-5,-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 32M x 4 Sy nchronous DRAMs in TSOP.
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MH32S72AVJA-5
104-BIT
432-WORD
72-BIT
MH32S72AVJA
85pin
94pin
10pin
95pin
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D1415
Abstract: MH64S72VJG-5
Text: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.
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MH64S72VJG-5
208-BIT
864-WORD
72-BIT
MH64S72VJG
72-bit
85pin
94pin
10pin
95pin
D1415
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS SY Low Impedance & Long Life Series • Features : Low Impedance , high permissible ripple current at high frequency SY and long life than SC Long Life ■ Recommended Applications: SC Used switching requlator applications in computers. Especially for high frequency.
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100VDC
120Hz
13X35
100KHz
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znr varistor
Abstract: DXT031-38-1A RC SUPPRESSOR 220v ac solenoid valve VF1000 vf3160 VF5000 VF5220 solenoid valve 24v vf312
Text: 5 Port Pilot Solenoid Valve Rubber Seal VF1000/3000/5000 SY SV SY SYJ Large flow capacity, SX Yet compact size. VK Low power consumption. VZ 1.8WDC VF Exhausting equipment for pilot valve not required. VFR Common exhaust for main valve and pilot valve is available.
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VF1000/3000/5000
VF5000
VF3000
VF1000
znr varistor
DXT031-38-1A
RC SUPPRESSOR
220v ac solenoid valve
VF1000
vf3160
VF5000
VF5220
solenoid valve 24v
vf312
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Untitled
Abstract: No abstract text available
Text: Yageo corporation ELECTROLYTIC CAPACITORS Miniature Aluminum Electrolytic Capacitors SY [ For Low Impedance and Low ESR Suitable for Motherboard Output Termination ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors for High Frequency Applications
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120Hz,
100KHz
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Untitled
Abstract: No abstract text available
Text: Yageo corporation ALUMINUM electrolytic capacitors Miniature Aluminum Electrolytic Capacitors SY [ For Low Impedance and Low E.S.R Suitable for Output of Mother Board ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors For High Frequency Applications
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100KHz)
Max20
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Untitled
Abstract: No abstract text available
Text: Yageo corporation ELECTROLYTIC CAPACITORS Miniature Aluminum Electrolytic Capacitors SY [ For Low Impedance and Low ESR Suitable for Output of Motherboard ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors for High Frequency Applications Electrical Characteristics
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120Hz,
100KHz
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Untitled
Abstract: No abstract text available
Text: YAGEO CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS Miniature Size Aluminum Electrolytic Capacitors SY [ For Low Impedance and Low E.S.R Suitable for Output of Mother Board ] 105qC Single-Ended Lead Aluminum Electrolytic Capacitors For High Frequency Applications
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105qC
15000PF
1000PF.
100KHz)
Max25
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MH64S72QJA
Abstract: MH64S72QJA-6
Text: MITSUBISHI LSIs MH64S72QJA -6 4,831,838,208-BIT 64,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4
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MH64S72QJA
208-BIT
864-WORD
72-BIT
95pin
MH64S72QJA-6
133MHz
40pin
MH64S72QJA-6
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MH16S72ABGA-5
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72ABGA-5,-6,-7 1207959552-BIT 166777216 - WORD BY 72-BIT SynchronousDRAM PIN CONFIGURATION ( TOP VIEW ) A DESCRIPTION M 1 The MH16S72ABGA is an 16M word by 72-bit Sy nchronous DRAM module.This consists of f iv e
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MH16S72ABGA-5
1207959552-BIT
72-BIT
MH16S72ABGA
72-bit
MH16S72ABGA-5
133MHz
MH16S72ABGA-6
MH16S72ABGA-7
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MH32S72BBFA
Abstract: MH32S72BBFA-6
Text: MITSUBISHI LSIs MH32S72BBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4
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MH32S72BBFA
104-BIT
432-WORD
72-BIT
95pin
MH32S72BBFA-6
133MHz
40pin
MH32S72BBFA-6
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MH32S72DBFA
Abstract: MH32S72DBFA-6
Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This
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MH32S72DBFA
104-BIT
432-WORD
72-BIT
MH32S72DBFA-6
95pin
133MHz
40pin
MH32S72DBFA-6
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MH32S72DBFA
Abstract: MH32S72DBFA-7 MH32S72DBFA-8 D2930
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72DBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This
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MH32S72DBFA
104-BIT
432-WORD
72-BIT
95pin
MH32S72DBFA-7
100MHz
MH32S72DBFA-7
MH32S72DBFA-8
D2930
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ba 663
Abstract: D1112 120k dynamic RAM
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This
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MH28S72PJG
416-BIT
728-WORD
72-BIT
133MHz
100MHz
40pin
ba 663
D1112
120k dynamic RAM
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MH16S72DCFA-6
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72DCFA-6 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72DCFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard
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MH16S72DCFA-6
552-BIT
216-WORD
72-BIT
MH16S72DCFA
72-bit
85pin
94pin
10pin
95pin
MH16S72DCFA-6
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MH8S72DCFD-6
Abstract: No abstract text available
Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH8S72DCFD-6 603,979,776-BIT 8,388,608-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH8S72DCFD is 8388608 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard
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MH8S72DCFD-6
776-BIT
608-WORD
72-BIT
MH8S72DCFD
72-bit
85pin
94pin
10pin
95pin
MH8S72DCFD-6
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D1113
Abstract: MH32S72AVJA-6
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AVJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard
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MH32S72AVJA-6
104-BIT
432-WORD
72-BIT
MH32S72AVJA
72-bit
85pin
94pin
10pin
95pin
D1113
MH32S72AVJA-6
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH16S72AVJB-6 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72AVJB is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard
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MH16S72AVJB-6
552-BIT
216-WORD
72-BIT
MH16S72AVJB
72-bit
85pin
94pin
95pin
10pin
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MH16S72BDFA-7
Abstract: MH16S72BDFA-8
Text: MITSUBISHI LSIs MH16S72BDFA-7, -8 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change w ithout notice. DESCRIPTION The MH16S72BDFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen
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MH16S72BDFA-7,
552-BIT
216-WORD
72-BIT
MH16S72BDFA
85pin
94pin
10pin
95pin
MH16S72BDFA-7
MH16S72BDFA-8
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MH32S72AVJA-6
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72AVJA-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard
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MH32S72AVJA-6
104-BIT
432-WORD
72-BIT
MH32S72AVJA
72-bit
85pin
94pin
10pin
95pin
MH32S72AVJA-6
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Untitled
Abstract: No abstract text available
Text: TC74VHC161 F/FN/FS TC74VHC163F/FN/FS SY N C H R O N O U S PRESETTABLE 4 - BIT COUNTER TC74VH C161F / FN / FS BIN ARY, A SY N C H R O N O U S CLEAR TC 74VH C163F/ FN / FS BIN ARY. SY N C H R O N O U S CLEAR The TC74VHC 161 and 163 are advanced high speed CMOS
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TC74VHC161
TC74VHC163F/FN/FS
TC74VH
C161F
C163F/
TC74VHC
TC74VHC163
DD27333
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Untitled
Abstract: No abstract text available
Text: MEMORY Unbuffered 4 M x 72 BIT r .SY N<'Nil ^rlrÎONOUS> DYNAM IC RAWIIDIMM MB¡8?¡ndç¡072BZ-75/-1QÎ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072BZ is afully decoded, CMOS Sy nc hro no usJDynam ic Random Access Memory SDRAM
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072BZ-75/-1QÎ
168-pin,
MB8504S072BZ
MB81F16822B
168-pin
F9711
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