Untitled
Abstract: No abstract text available
Text: Current and Voltage Controls 3-Phase Cos ϕ Control Type SY 115 • Load guard for asynchronous motors and other symmetrical loads • Measures on phase difference cos ϕ between motor current and voltage • Measuring range: Cos ϕ = 0-0.9 with 1-phase current
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS SY Low Impedance & Long Life Series • Features : Low Impedance , high permissible ripple current at high frequency SY and long life than SC Long Life ■ Recommended Applications: SC Used switching requlator applications in computers. Especially for high frequency.
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100VDC
120Hz
13X35
100KHz
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la8072-11
Abstract: da56-11 common cathode 7 segment display LC80X1-11-Series la2371 common cathode 7-segment display LJ2041R21 WU-4-403RGC 40637 WU-B-D-3102-3200-6
Text: WU - M - 001 - . COB - Technologie LED-Hintergrundbeleuchtung für LCD-Anzeigen und andere lichttechnische Anwendungen LED-Back Lights for LCD-Displays and other technical light applications Herstellung in Deutschland Made in Germany Unit: [mm] Tolerance: ±0.25
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WU-10
e028000
e010150
e028020
III-119
la8072-11
da56-11
common cathode 7 segment display
LC80X1-11-Series
la2371
common cathode 7-segment display
LJ2041R21
WU-4-403RGC
40637
WU-B-D-3102-3200-6
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD US104S/N SCR SCRS ̈ DESCRI PT I ON Thanks to highly sensitive triggering levels, the UTC US104S is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids,
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US104S/N
US104S
US104SL-4-TA3-T
US104SG-4-TA3-T
US104SL-6-TA3-T
US104SG-6-TA3-T
US104SL-8-TA3-T
US104SG-8-TA3-T
US104NL-4-TA3-T
US104NG-4-TA3-T
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transistor vergleichsliste
Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Text: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G
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Halbleiterbauelemente DDR
Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Text: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs temperatur von 25 °C angegeben.
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6x10x12
Halbleiterbauelemente DDR
Dioden SY 250
diode sy-250
B250C135
u103d
GD244
transistor gc 301
SAM42
diode sy 166
D172C
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us8k
Abstract: d1272
Text: AS7M64T3256A AS7M64T3512A AS7M64T3256B AS7M64T3512B B Cache Modules Async Async Burst Burst Low Voltage 256/512 KByte Cache Modules with Tag PRELIMINARY ASYNCHRONOUS VERSIONS FEATURES 64-bit 3.3V asynchronous data PIN D I A G R A M a s y n c • 5V tolerant I/O specification
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64T3256A
AS7M64T3256A
AS7M64T3512A
AS7M64T3256B
AS7M64T3512B
64-bit
T00344c
us8k
d1272
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Untitled
Abstract: No abstract text available
Text: fax id: 5214 CYPRESS CY7C008V/009V CY7C018V/019V PRELIMINARY 3.3V 64K/128K x 8/9 Dual-Port Static RAM Features Fully asynchronous operation Automatic power-down Expandable data bus to 16/18 bits or more using Mas ter/Slave chip select when using more than one device
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CY7C008V/009V
CY7C018V/019V
64K/128K
100-pln
CY7C008)
CY7C009)
CY7C018)
100-Pin
CY7C009V-15A
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CY7C
Abstract: 7C141
Text: CY7C130/CY7C131 CY7C14Ü/CY7C141 CYPRESS SEMICONDUCTOR 1024 x 8 Dual-Port Static RAM F eatu res F u n c tio n a l D escrip tio n • 0.8-m icron CM OS for optimum speed/power T he CY7C 130/C Y 7C 131/C Y 7C 140/ CY7C141 are high-speed CM OS IK by 8 dual-port static RAMs. Two ports are pro
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CY7C130/CY7C131
CY7C14
/CY7C141
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7C140/CY7C141
CY7C140
CY7C
7C141
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Untitled
Abstract: No abstract text available
Text: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation
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CY7C130/CY7C131
CY7C140/CY7C141
CY7C130/CY7C131
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7C130/CY
7C131/CY7C140/
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Untitled
Abstract: No abstract text available
Text: AN A LO G D E V IC E S Hybrid Vìdeo Digital-to-Analog Converters HDL-3805/3806 FEATURES Triple 8-Bit D/A with LUTs 115MHz Update Rates RGB Composite Functions Sm all Size 2.3" x 1.5" Latched Composite Functions (HDL-3806) H D L -3 8 0 5 /3 8 0 6 F U N C T I O N A L B L O C K D I A G R A M
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HDL-3805/3806
115MHz
HDL-3806)
HDL-380S
AD9700IC
HD1-3805/3806
HLD-3805/3806
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7C1312
Abstract: Cypress 7C130
Text: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation
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CY7C130/CY7C131
CY7C140/CY7C141
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7C140/CY7C141
7C1312
Cypress 7C130
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VQB71
Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Text: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von
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HA 13645
Abstract: acr38
Text: CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CM OS for optimum speed/power • BUSY output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY 7C136/CY7C142/
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CY7C132/CY7C136
CY7C142/CY7C146
CY7C132/
CY7C136;
52-pin
twfil24!
HA 13645
acr38
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3246A
Abstract: No abstract text available
Text: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS 1K x 8 Dual-Port Static RAM Functional Description Features True Dual-Ported memory ceils which allow simulta neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power
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65-micron
CY7C130/CY7C131
CY7C140/CY7C141
CY7C130/CY7C131;
48-pin
CY7C130/140)
52-pin
IDT713CVIDT7140
3246A
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electromatic VOLTAGE LEVEL RELAY SM 125 220
Abstract: electromatic s system sv 115 230 electromatic RELAY SM 115 220 electromatic s system st 125 115 electromatic denmark sc 185 220 electromatic s system sb 165 electromatic s system SA 105 220 electromatic s system electromatic s system sm 105 220 ST 125 220 electromatic
Text: *I •»p»' • SYSTEM ELECTRONIC CONTROL- AND MONITORING MODULES û û f lc in o n if llk i S - SYSTEM SA B C 207 220 SUPPLY 2 2 0 V AC COMBI * 15s ■ RANGE SELECTOR 50 35^^6 5 riMfe rtELAY ON Delay on operate SA Interval timer & Delay on release SB Recycler & Interval timer
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inc12
electromatic VOLTAGE LEVEL RELAY SM 125 220
electromatic s system sv 115 230
electromatic RELAY SM 115 220
electromatic s system st 125 115
electromatic denmark sc 185 220
electromatic s system sb 165
electromatic s system SA 105 220
electromatic s system
electromatic s system sm 105 220
ST 125 220 electromatic
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7C130
Abstract: L1314
Text: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each
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CY7C130/CY7C131
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7C140/CY7C141
7C130/CY7C131/CY7C140/
CY7C14
7C130
L1314
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Untitled
Abstract: No abstract text available
Text: CY7C130/CY7C131 _ CY7C140/CY7C141 = SEMICONDUCTOR 1024 x 8 D ual-Port Static R A M Features Functional Description • 0.8-micron CMOS for optimum speed/power T he CY 7C 130/CY7C13 L/CY7C140/ CY7C141 arc high-speed C M O S IK by 8 dual-port static RA M s. Two ports are pro
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CY7C130/CY7C131
CY7C140/CY7C141
CY7C130/CY7CI31
CY7C140/
CY7C141
CY7C130/
CY7C131;
CY7CI40/CY7C141
130/CY7C13
L/CY7C140/
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A&TB CI 11 AM
Abstract: LT 5251 CY7C132 CY7C136 CY7C146 B057r
Text: CYPRESS EbE SEMI CONDUCTOR D " F ^ - Z V asa^bbB 1 • CY7C132/CY7C136 CY7C142/CY7C146 I Z . CYPRESS_ SEMICONDUCTOR Features 0.8 micron CMOS for optimum speed/power Automatic power-down TTL-compatible Capable of withstanding greater than 2001V electrostatic discharge
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CY7C132/CY7C136
CY7C142/CY7C146
CY7C132/
CY7C136;
CY7C142/CY7C142
CY7C132/CY7C136/CY7C142/
CY7C146
A&TB CI 11 AM
LT 5251
CY7C132
CY7C136
B057r
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Untitled
Abstract: No abstract text available
Text: G A L 1 6 V 8 iilL a ttice • High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 166 MHz — 4 ns Maximum from Clock Input to Data Output
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100ms)
GAL16V8
16V8B-15/-25:
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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AN5410
Abstract: AN295 AN5411 TH47
Text: L IN E A R M O N O L IT H IC IN TE G R A TE D C IR C U IT S IC’s For T V Electrical Characteristics Ta= 25X Type No. Function Maximum Ratngs (Ta=25 C) Symbol Item Total Circuit Current Deflection AN295 Signal Pro cessin g Circuit Circuit V c c i - 1 2 V , R o sc < V )— 9 7 k fi
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AN295
100/iA
V5-10
AIN295
0/AN54
AN5410.
AN5429
AN5410
AN5411
TH47
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u25 diode
Abstract: No abstract text available
Text: Central CLL4729A THRU CLL4764A Sem icon du ctor Corp. 1.0W ZENER DIODE 5% TOLERANCE DESCRIPTIO N: The CEN TRAL SEM ICONDUCTOR CLL4729A Series Silicon Zener Diode is a high quality voltage regulator for use in surface mount industrial, commercial, entertainment and computer
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CLL4729A
CLL4764A
200mA
u25 diode
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YD 1270
Abstract: yl 1050 tetrode yl 1060 QQE 03 32 YD 1336 philips oszillator yd1336 yd 7377 Valvo valvo transistoren
Text: Elektronik. Wir bauen die Elemente. Vaniti \ Ö Senderöhren für Nachrichtensender 1983 Datenbuch Elektronik. Wir bauen die Elemente. Unser Arbeitsgebiet - besonders die Mi kroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen.
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