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    SWITCHINGREGULATOR Search Results

    SWITCHINGREGULATOR Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Switching Regulators Linear Technology Flash Memory VPP Generator Reference Designs Original PDF

    SWITCHINGREGULATOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK68

    Abstract: 2SK1774 2SK684 10MAVgs
    Text: 4M^b20S 2SK1774 0 0 1 3 5 4^ 344 • H I T 4 HITACHI/COPTOELECTRONICS tiE I Silicon N Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC


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    2SK1774 0D13550 2SK684 D013SS1 2SK68 10MAVgs PDF

    hitachi ha 250

    Abstract: 2SK1400A 2SK2345
    Text: 2SK2345 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    2SK2345 O-22QFM D-85622 hitachi ha 250 2SK1400A PDF

    k1832

    Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
    Text: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2


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    2SK1831, 2SK1832 2SK1831 sou150 k1832 K1831 2SK1157 2SK1158 2SK1831 2SK1832 PDF

    2SK1808

    Abstract: 2SK1340 DSA003639
    Text: 2SK1808 Silicon N-Channel MOS FET ADE-208-1322 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


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    2SK1808 ADE-208-1322 O-220FM 2SK1808 2SK1340 DSA003639 PDF

    2SK1340

    Abstract: 2SK1807 DA40
    Text: 2SK1807 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 2 3 1. Gate


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    2SK1807 O-220AB 2SK1340 2SK1807 DA40 PDF

    2SK1761

    Abstract: DSA003639
    Text: 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter


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    2SK1761 ADE-208-1315 O-220AB 2SK1761 DSA003639 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1807 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    2SK1807 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1775 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    2SK1775 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1809 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC—DC converter Table 1 Absolute Maximum Ratings Ta = 25 ° C


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    2SK1809 2SK1404 PDF

    2SK2345

    Abstract: Hitachi DSA001652
    Text: 2SK2345 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM


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    2SK2345 O-220FM D-85622 2SK2345 Hitachi DSA001652 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3


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    2SK1761 O-220AB D-85622 Hitachi DSA002780 PDF

    2SK1342

    Abstract: 2SK1775
    Text: 2SK1775 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 1 2 3 1. Gate


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    2SK1775 2SK1342 2SK1342 2SK1775 PDF

    dc-dc converter hitachi

    Abstract: 2SK1764 2SK975 DSA003639
    Text: 2SK1764 Silicon N-Channel MOS FET ADE-208-1317 Z 1st. Edition Mar. 2001 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter


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    2SK1764 ADE-208-1317 dc-dc converter hitachi 2SK1764 2SK975 DSA003639 PDF

    2SK1404

    Abstract: 2SK1809 Hitachi DSA00397
    Text: 2SK1809 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3


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    2SK1809 O-220AB 2SK1404 2SK1809 Hitachi DSA00397 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1764 Silicon N-Channel MOS FET HITACHI Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter


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    2SK1764 2SK975 LLL111H PDF

    k1340

    Abstract: No abstract text available
    Text: 2SK1808 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resi stance High speed switching L ow drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM


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    2SK1808 O-220FM k1340 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1838S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switchingregulator, DC-DC converter +0.1 0.60-0.1 2.3 +0.15 5.55-0.15


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    2SK1838S O-252 PDF

    marking H48

    Abstract: No abstract text available
    Text: Ordering number : EN1914A SB007-03CP N0.1914A I Schottky B arrier Diode 30V, 70mA Rectifier A p p lic a tio n s - High frequency rectification switchingregulators, converters, choppers F e a tu res • Low forward voltage (Vp max = 0.55V) •Fast reverse recovery time (trr max = 10ns)


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    EN1914A SB007-03CP marking H48 PDF

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter


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    2SK1764 Hitachi DSA00279 PDF

    8150 diode

    Abstract: Hitachi DSA002779
    Text: 2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D


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    2SK1836, 2SK1837 K1836 K1837 D-85622 8150 diode Hitachi DSA002779 PDF

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1808 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM


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    2SK1808 O-220FM D-85622 Hitachi DSA002748 PDF

    2SK1764

    Abstract: marking ky fet FET marking ky
    Text: 2SK1764 Silicon N Channel MOS FET Application UPAK Low frequency amplifier High speed switching 3 2 1 4 Features • Low on–resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switchingregulator, DC–DC


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    2SK1764 2SK1764 marking ky fet FET marking ky PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2328 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • • Low on—resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Table 1 Absolute Maximum Ratings


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    2SK2328 2SK2328 2SK1403A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1773 Silicon N-Channel MOS FET HITACHI November 1996 A pplication High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline


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    2SK1773 PDF