k1832
Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
Text: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2
|
Original
|
PDF
|
2SK1831,
2SK1832
2SK1831
sou150
k1832
K1831
2SK1157
2SK1158
2SK1831
2SK1832
|
2SK1808
Abstract: 2SK1340 DSA003639
Text: 2SK1808 Silicon N-Channel MOS FET ADE-208-1322 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
|
Original
|
PDF
|
2SK1808
ADE-208-1322
O-220FM
2SK1808
2SK1340
DSA003639
|
2SK1340
Abstract: 2SK1807 DA40
Text: 2SK1807 Silicon N Channel MOS FET Application TO-220AB High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 2 3 1. Gate
|
Original
|
PDF
|
2SK1807
O-220AB
2SK1340
2SK1807
DA40
|
2SK1761
Abstract: DSA003639
Text: 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
|
Original
|
PDF
|
2SK1761
ADE-208-1315
O-220AB
2SK1761
DSA003639
|
2SK2345
Abstract: Hitachi DSA001652
Text: 2SK2345 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM
|
Original
|
PDF
|
2SK2345
O-220FM
D-85622
2SK2345
Hitachi DSA001652
|
Hitachi DSA002780
Abstract: No abstract text available
Text: 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3
|
Original
|
PDF
|
2SK1761
O-220AB
D-85622
Hitachi DSA002780
|
2SK1342
Abstract: 2SK1775
Text: 2SK1775 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 1 2 3 1. Gate
|
Original
|
PDF
|
2SK1775
2SK1342
2SK1342
2SK1775
|
dc-dc converter hitachi
Abstract: 2SK1764 2SK975 DSA003639
Text: 2SK1764 Silicon N-Channel MOS FET ADE-208-1317 Z 1st. Edition Mar. 2001 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter
|
Original
|
PDF
|
2SK1764
ADE-208-1317
dc-dc converter hitachi
2SK1764
2SK975
DSA003639
|
2SK1404
Abstract: 2SK1809 Hitachi DSA00397
Text: 2SK1809 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3
|
Original
|
PDF
|
2SK1809
O-220AB
2SK1404
2SK1809
Hitachi DSA00397
|
str 5707
Abstract: datasheet str 5707 STR 6707 SMPS CIRCUIT datasheet str 6707 str 6707 STR-S5707 str 6707 diagram guide ic str 6707 str 6708 str 5708
Text: STR-S5703 QUASI-RESONANT QUASI-RESONANTFLYBACK FLYBACK OFF-LINE SWITCHING OFF-LINE SWITCHINGREGULATOR REGULATOR OFF-LINE SWITCHING REGULATOR – WITH BIPOLAR SWITCHING TRANSISTOR COLLECTOR 1 COMMON 2 BASE 3 SINK 4 OVER-CURRENT PROTECTION 5 INHIBIT 6 32 V SENSE
|
Original
|
PDF
|
STR-S5703
STR-S5703
str 5707
datasheet str 5707
STR 6707 SMPS CIRCUIT
datasheet str 6707
str 6707
STR-S5707
str 6707 diagram guide
ic str 6707
str 6708
str 5708
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Type SMD Product specification 2SK1838S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switchingregulator, DC-DC converter +0.1 0.60-0.1 2.3 +0.15 5.55-0.15
|
Original
|
PDF
|
2SK1838S
O-252
|
Hitachi DSA00279
Abstract: No abstract text available
Text: 2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter
|
Original
|
PDF
|
2SK1764
Hitachi DSA00279
|
8150 diode
Abstract: Hitachi DSA002779
Text: 2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D
|
Original
|
PDF
|
2SK1836,
2SK1837
K1836
K1837
D-85622
8150 diode
Hitachi DSA002779
|
Hitachi DSA002748
Abstract: No abstract text available
Text: 2SK1808 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM
|
Original
|
PDF
|
2SK1808
O-220FM
D-85622
Hitachi DSA002748
|
|
|
2SK68
Abstract: 2SK1774 2SK684 10MAVgs
Text: 4M^b20S 2SK1774 0 0 1 3 5 4^ 344 • H I T 4 HITACHI/COPTOELECTRONICS tiE I Silicon N Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC
|
OCR Scan
|
PDF
|
2SK1774
0D13550
2SK684
D013SS1
2SK68
10MAVgs
|
hitachi ha 250
Abstract: 2SK1400A 2SK2345
Text: 2SK2345 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline
|
OCR Scan
|
PDF
|
2SK2345
O-22QFM
D-85622
hitachi ha 250
2SK1400A
|
Untitled
Abstract: No abstract text available
Text: 2SK1807 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline
|
OCR Scan
|
PDF
|
2SK1807
|
Untitled
Abstract: No abstract text available
Text: 2SK1775 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline
|
OCR Scan
|
PDF
|
2SK1775
|
Untitled
Abstract: No abstract text available
Text: 2SK1809 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC—DC converter Table 1 Absolute Maximum Ratings Ta = 25 ° C
|
OCR Scan
|
PDF
|
2SK1809
2SK1404
|
Untitled
Abstract: No abstract text available
Text: 2SK1764 Silicon N-Channel MOS FET HITACHI Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter
|
OCR Scan
|
PDF
|
2SK1764
2SK975
LLL111H
|
k1340
Abstract: No abstract text available
Text: 2SK1808 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resi stance High speed switching L ow drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM
|
OCR Scan
|
PDF
|
2SK1808
O-220FM
k1340
|
marking H48
Abstract: No abstract text available
Text: Ordering number : EN1914A SB007-03CP N0.1914A I Schottky B arrier Diode 30V, 70mA Rectifier A p p lic a tio n s - High frequency rectification switchingregulators, converters, choppers F e a tu res • Low forward voltage (Vp max = 0.55V) •Fast reverse recovery time (trr max = 10ns)
|
OCR Scan
|
PDF
|
EN1914A
SB007-03CP
marking H48
|
Untitled
Abstract: No abstract text available
Text: 2SK2328 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • • Low on—resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Table 1 Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
2SK2328
2SK2328
2SK1403A
|
Untitled
Abstract: No abstract text available
Text: 2SK1773 Silicon N-Channel MOS FET HITACHI November 1996 A pplication High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline
|
OCR Scan
|
PDF
|
2SK1773
|
