Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SWITCHING TRANSISTOR LOW POWER Search Results

    SWITCHING TRANSISTOR LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SWITCHING TRANSISTOR LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD560

    Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is


    Original     		PDF 2SD560 2SD560 O-220AB O-220AB) nec 2sd560 2sd560 equivalent NEC RELAY

    NEC semiconductor

    Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.


    Original     		PDF 2SD2217 2SD2217 C11531E) NEC semiconductor transistor PT 4500 C11531E NEC C11531E

    NEC RELAY

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct


    Original     		PDF 2SD2163 2SD2163 NEC RELAY

    2SC4554

    Abstract: 2sc4554 nec
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a low power dissipation.


    Original     		PDF 2SC4554 2SC4554 2sc4554 nec

    BUV48A

    Abstract: transistor buv48a transistor 2015 JESD97 NPN Transistor 8A ST BUV48A
    Text: BUV48A High voltage fast switching NPN power transistor Features • NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications 3 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power


    Original     		PDF BUV48A O-247 O-247 JESD97. BUV48A transistor buv48a transistor 2015 JESD97 NPN Transistor 8A ST BUV48A

    BUV48A

    Abstract: JESD97 ST BUV48A
    Text: BUV48A High voltage fast switching NPN power transistor Features • NPN transistor ■ High voltage capability ■ High current capability ■ Fast switching speed Applications 3 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power


    Original     		PDF BUV48A O-247 O-247 BUV48A JESD97 ST BUV48A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC


    Original     		PDF 2SA1648, 2SA1648-Z 2SA1648

    2SA1743

    Abstract: C11531E
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


    Original     		PDF 2SA1743 2SA1743 C11531E

    2SA1742

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal


    Original     		PDF 2SA1742 2SA1742 O-220 O-220)

    D1316

    Abstract: 2SA1744
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is


    Original     		PDF 2SA1744 2SA1744 D1316

    2SA1741

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


    Original     		PDF 2SA1741 2SA1741

    2SC4550

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4550 2SC4550

    NEC 2sc4552

    Abstract: 2SC4552
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		PDF 2SC4552 2SC4552 NEC 2sc4552

    UN1518

    Abstract: UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) *Pb-free plating product number: UN1518L „ ORDERING INFORMATION Order Number


    Original     		PDF UN1518 UN1518L UN1518-AE3-R UN1518L-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R high gain low voltage NPN transistor

    transistor case To 106

    Abstract: BUT11A Transistor morocco 1300
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION


    Original     		PDF BUT11A BUT11A O-220 O-220 transistor case To 106 Transistor morocco 1300

    Untitled

    Abstract: No abstract text available
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION


    Original     		PDF BUT11A BUT11A O-220 O-220

    Untitled

    Abstract: No abstract text available
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION


    Original     		PDF BUT11A BUT11A O-220 O-220

    Transistor morocco 1300

    Abstract: but11a BUT11A APPLICATION ST BUT11A
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION


    Original     		PDF BUT11A BUT11A O-220 O-220 Transistor morocco 1300 BUT11A APPLICATION ST BUT11A

    UN1518

    Abstract: UN1518-AE3-R UN1518L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar power transistor * High current switching * High hFE * Low VCE(SAT) Lead-free: UN1518L Halogen-free:UN1518G „ ORDERING INFORMATION Normal UN1518-AE3-R


    Original     		PDF UN1518 UN1518L UN1518G UN1518-AE3-R UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518-AE3-R UN1518L-AE3-R

    08-Oct-97

    Abstract: No abstract text available
    Text: Temic BUF7216 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan     		PDF BUF7216 D-74025 08-Oct-97 08-Oct-97

    transistor SMD n 03a

    Abstract: No abstract text available
    Text: Temic BUD600 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan     		PDF BUD600 BUD600 D-74025 18-Jul-97 transistor SMD n 03a

    BUD630

    Abstract: No abstract text available
    Text: Temic BUD630 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan     		PDF BUD630 BUD630 D-74025 18-Jul-97

    SMD Transistor A

    Abstract: Temic Semiconductors
    Text: Temic BUD636A Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan     		PDF BUD636A BUD636A D-74025 18-Jul-97 SMD Transistor A Temic Semiconductors

    BUL87

    Abstract: No abstract text available
    Text: rZg SCS-THOMSON ^7# saisiamicTfBiwBei BUL87 ~HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . • . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED


    OCR Scan     		PDF BUL87 BUL87 O-220