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    Eclipse Tools ASSVP-32.768MHZ-C12-T

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    Chip 1 Exchange ASSVP-32.768MHZ-C12-T 1,300
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    Ecliptek Corporation ASSVP-32.768MHZ-C12-T

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    Chip1Stop ASSVP-32.768MHZ-C12-T 1,000
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    IBS Electronics ASSVP-32.768MHZ-C12-T 1,000 199
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    SVP32 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    concurrent rdram

    Abstract: RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72
    Text: Preliminary Information Concurrent RDRAM ® 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) RAMBUS Overview The 16/18/64/72-Mbit Concurrent Rambus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns


    Original     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-Mbit 600MHz DL0029-07 concurrent rdram RDRAM CONCURRENT es a 00112 concurrent rdram 72 mbit concurrent RDRAM 72 9 rambus concurrent rdram R64MC-50-600 SVP-32 rdram clock generator concurrent RDRAM 72

    KB918365

    Abstract: PID dc motor control with avr project light following robot diagram using microcontroller ATMEGA1284P avr studio 5 code for controlling robot by usb port pid for line following robot atmel bootloader tutorial PID code for avr circuit diagram of pid controller stopwatch schematic diagram
    Text: Pololu Orangutan SVP User's Guide 2001–2010 Pololu Corporation Pololu Orangutan SVP User's Guide 1. Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.a. Supported Operating Systems . . . . . . . . . . . . . . 2. Contacting Pololu . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF s/0J18] com/docs/0J20] com/2008/02/avr-programming-onmac KB918365 PID dc motor control with avr project light following robot diagram using microcontroller ATMEGA1284P avr studio 5 code for controlling robot by usb port pid for line following robot atmel bootloader tutorial PID code for avr circuit diagram of pid controller stopwatch schematic diagram

    Untitled

    Abstract: No abstract text available
    Text: P-SVP32-1125-0.65A Unit: nn May 2006


    OCR Scan     		PDF P-SVP32-1125-0

    Untitled

    Abstract: No abstract text available
    Text: P-SVP32-1125-0.65A


    OCR Scan     		PDF P-SVP32-1125-0 65AP-SVP32-1125-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA cIOti7 2 4 a 0 0 2 ô b fl2 131 TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description TheTC59R1809VK/HK Rambus Dynamic RAM RDRAM is a next-generation high-speed CMOS DRAM with a 2,097,152 x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data


    OCR Scan     		PDF TC59R1809VK/HK TheTC59R1809VK/HK 500MB/S. TC59R1809VK/HK 32-pin RD18011195 SVP32-P-1125A) SHP36-P-1125)

    mb8117400

    Abstract: No abstract text available
    Text: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of


    OCR Scan     		PDF MB8117400-60/-70/-80 MB8117400 196-bits SD-08285-02-93-DS

    hfdw

    Abstract: No abstract text available
    Text: _ ü 16/18Mbit 2Mx8/9 & 64/72Mbit (8Mx8/9) ConcurrentRDRAM Overview VDD GND BUSDATA[8] GND BUSDATA[7] (NC) BUSENABLE VDD BUSDATA[6] GND BUSDATA[5] VDDA RXCLK GNDA TXCLK VDD BUSDATA[4] GND BUSCTRL SIN VREF SOUT BUSDATA[3] GND BUSDATA[2] (NC)


    OCR Scan     		PDF 16/18Mbit 64/72Mbit 16/18/64/72-M 600MHz hfdw

    TC59R1809

    Abstract: No abstract text available
    Text: High Speed Dynamic RAM Rambus DRAM Capacity Type No. Data Transfer Rats ns Organization Max Min Hit Latency (ns) Read Writs Power Power Supply (V) Dissipation (mW) No. of Pins 4.5MBit ‘ TC59R0409VK 524,288 x 9 2 5 48 16 5V±10% 1325 32 18MBit "TC59R1809VK


    OCR Scan     		PDF 18MBit TC59R0409VK TC59R1809VK TC85RT000VK SVP32 SVP42 TC59S1604FT/FTL-10 TC59S1604FT/FTL-12 C59S1608FT/FTL-10 TC59S1608FT/FTL-12 TC59R1809

    mb8116400

    Abstract: 8116400 11cxa
    Text: September 1993 Edition 4.1 F U J IT S U DATA SHEET M B 8 116400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216


    OCR Scan     		PDF MB8116400 024-bits JV0040-939J4 8116400 11cxa

    GM73V1892

    Abstract: concurrent RDRAM 72 concurrent rdram LG LG concurrent RDRAM 1I159 gm73v189 gm73v
    Text: GM73V1892 GM73V1682 LG Semicon Co.,Ltd. 2,097,152 WORDS x 8/9 BIT Rambus DRAM Description The GM73V1682 / GM73V1892 Rambus Dynamic Random Access Memory RDRAM is a next generation high-speed CMOS DRAM organized as 2,097,152 x8/9 bits and capable o f bursting up to 256


    OCR Scan     		PDF GM73V1892 GM73V1682 GM73V1682 32-pin SVP-32 concurrent RDRAM 72 concurrent rdram LG LG concurrent RDRAM 1I159 gm73v189 gm73v

    Toshiba rdram

    Abstract: TC59R1809
    Text: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*


    OCR Scan     		PDF TC59R1809VK/HK 500MB/s. 32-pin TC59R1809VK/H SVP32-P-1125A) TC59R1809VK/HKâ Toshiba rdram TC59R1809

    Untitled

    Abstract: No abstract text available
    Text: September 1993 Edition 4.1 FUJITSU DATA SHEET M B 8 1 1 6 4 Ö O -6 0 /-7 0 /-8 0 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu M B8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216


    OCR Scan     		PDF B8116400 MB8116400 10JREF V32002S-5C 374T7Sb

    Untitled

    Abstract: No abstract text available
    Text: Sept FUJITSU Edition zditk 4.1 DATA SHEET MB8116WO-60/-70/-80 CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM ' t The Fujitsu MB8116100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116100 features a ’ fast page" mode of


    OCR Scan     		PDF MB8116WO-60/-70/-80 MB8116100 096-bits MB8116100 0004DÃ MB8116100-60 MB8116100-70 MB8116100-80

    Untitled

    Abstract: No abstract text available
    Text: September 1993 Edition 4.1 FUJITSU DATA SHEET M B 8 1 1 6 1 0 0 -6O/-7O/-8O CMOS 16M x 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB8116100 is a fully deooded CMOS Dynamic RAM DRAM that contains a total of


    OCR Scan     		PDF MB8116100 096-bits MB8116100 901TYP 2002S

    HY5RC1809

    Abstract: concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53
    Text: HY5RC1809 / 6408 Series “HYUNDAI 18Mb 2Mx9 / 64Mb(8Mx8), Concurrent RDRAM Preliminary Overview The 18/64M b C o n cu rre n t R am bus DRAMs (RDRAM) are extremely high-speed CMOS DRAMs organized as 2M words by 9 bits or 8M words by 8 bits. They are capable of bursting unlimited length of


    OCR Scan     		PDF 18/64M SVP-32 HY5RC1809 concurrent rdram L3C analog hyundai concurrent rdram hyundai rdram concurrent RDRAM 72 HY5RC1809-66 concurrent rdram hyundai concurrent rdram 72 mbit HY5RC1809-53

    Z2400

    Abstract: a4 marking
    Text: September 1993 Edition 4.1 FUJITSU DATA SHEET M B 8 1 1 6 1 0 0 -6 0 /-7 0 /-8 0 CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM 0 ^ 1 The Fujitsu MB8116100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of


    OCR Scan     		PDF MB8116100 096-bits oftheMB8116100 SD-08369-003-93-DS Z2400 a4 marking

    Untitled

    Abstract: No abstract text available
    Text: September 1993 Editbn 4.1 FUJITSU DATA SHEET MB811 6400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4 —bit increments. The MB8116400 features a ’’fast page” mode of


    OCR Scan     		PDF MB811 MB8116400 024-bits MB8116400 90iTYP 151REF 301REF 101REF_

    mb8117400

    Abstract: No abstract text available
    Text: September 1993 Edition 2.0 FUJITSU DATA SHEET MB81174ÛO-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8117400 features a "fast page’ mode of


    OCR Scan     		PDF MB81174Ã O-60/-70/-80 MB8117400 196-bits MB8117400 374T75b MB8117400-60 MB8117400-70

    Untitled

    Abstract: No abstract text available
    Text: September 1993 Edition 3.1 FUJITSU DATA SHEET MB8116101-60/-70/-80 CM O S 16M x 1 B IT NIBBLE M O D E DYNAMIC RAM CMOS 16,777,216 x 1 BIT Nibble Mode Dynamic RAM The Fujitsu MB8116101 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 16,777,216 memory cells in a x1 configuration. The MB8116101 features a "nibble" mode of


    OCR Scan     		PDF MB8116101-60/-70/-80 MB8116101 096-bits V32002S-5C

    Untitled

    Abstract: No abstract text available
    Text: September 1993 Edition 2.0 FUJITSU DATA SHEET MB811740Û-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8117400 features a "fast page” mode of


    OCR Scan     		PDF MB811740Ã MB8117400 196-bits MB8117400 SVP-32P-M02) V32002S-5C GGG557S