FET MOSFET transistor ""
Abstract: AN569 MTB1306 dida bridge "DIDA" motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MTB1306/D DATA Advance Information HDTMOS E-FET ‘M High Density Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die
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MTB1306/D
OW1-2447
602-2H609
OG7741848
MTB1306~
FET MOSFET transistor ""
AN569
MTB1306
dida bridge
"DIDA" motorola
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temperature based speed control of exhaust fan using triac circuit diagram
Abstract: "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS" simple schematic diagram PWM 40a hydrogen EI - 33c TRANSFORMER EI 33c TRANSFORMER General Electric SCR Manual, Fifth Edition, 1972 rectifiers and zener diodes data NCP1200 CROSS REFERENCE pc smps transistor manual substitution RCA Solid state Linear Integrated Circuits 1970s
Text: HB214/D Rev. 2, Nov-2001 Rectifier Applications Handbook Rectifier Applications Handbook ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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HB214/D
Nov-2001
NCP1200
MBRS360T3
MUR160
r14525
HB214/D
temperature based speed control of exhaust fan using triac circuit diagram
"OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS"
simple schematic diagram PWM 40a hydrogen
EI - 33c TRANSFORMER
EI 33c TRANSFORMER
General Electric SCR Manual, Fifth Edition, 1972
rectifiers and zener diodes data
NCP1200 CROSS REFERENCE
pc smps transistor manual substitution
RCA Solid state Linear Integrated Circuits 1970s
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mc33167 applications
Abstract: MC34167 MC33167 GMT-0223 1N5825 5903B ac step-up transformer winding awg MC34167 Application Notes dc/tx/1/2/1257/MC34167 Application Notes
Text: MC34167, MC33167 5.0 A, Step−Up/Down/ Inverting Switching Regulators The MC34167, MC33167 series are high performance fixed frequency power switching regulators that contain the primary functions required for dc−to−dc converters. This series was specifically designed to be incorporated in step−down and
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MC34167,
MC33167
MC33167
1N5825
MUR415
2N3906
3055E
mc33167 applications
MC34167
GMT-0223
1N5825
5903B
ac step-up transformer winding awg
MC34167 Application Notes
dc/tx/1/2/1257/MC34167 Application Notes
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL o “B Order this document by MGSF3442XT1/D DATA Preliminary Information E Low r~S[on] Small-Signal MOSFETS ~1 GREEN LINE’” .i$ ,.* ,? MAXIMUM RATINGS TJ = 25°C unless othewise no~d ~ ~’~. ;-~-’:. it,:,~ yp~g~~$$. ‘
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MGSF3442XT1/D
2W609
MGSF3442H1/D
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power tmos
Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Text: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003 SCILLC, 2003 Previous Edition 2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
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Aug-2003
power tmos
936G
PR 751S
K1 MARK 6PIN SOT-363
carrier chiller
mc10116
MC10H210
mmsf5n03hd
0j sod-523
CASERM
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chopper transformer winding formula
Abstract: pq1cy103 PQ1CY1032Z alcohol sensor module AC adapter 12V classifications of regulators RC-1009B 40-VIN-VF PQ05
Text: General Information General Information • General Description A voltage regulator enables to get specific stable DC voltage without being affected by fluctuation of input voltage, load current, and ambient temperature. It is widely used for every power supply for drives, controllers, and operating devices in equipment.
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systron Donner 410
Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES
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MIL-STD-750E
MIL-STD-750D
systron Donner 410
MIL-STD-750E
Ultrasonic Atomizing Transducer
systron donner accelerometer
substitute diode PH 33D
fastest finger first indicator synopsis
emerson three phase dc motor driver service note
tektronix 576 curve tracer
MIL-STD-750E 1071
proximity detector sensor
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RHR1K160D
Abstract: TB334 MS-012AA K160D
Text: RHR1K160D Data Sheet January 2000 File Number 4788 1A, 600V Hyperfast Dual Diode Features [ /Title The RHR1K160D is a hyperfast dual diode with soft recovery • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <25ns RHR1 characteristics (t rr < 25ns . It has about half the recovery
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RHR1K160D
RHR1K160D
150oC
K160D
TB334
MS-012AA
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Untitled
Abstract: No abstract text available
Text: 600V 46A 0.083Ω APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET COOLMOS B TO Power Semiconductors -2 47 D3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode Low Miller Capacitance
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APT47N60BCF
APT47N60SCF
APT47N60BCFG*
APT47N60SCFG*
O-247
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Untitled
Abstract: No abstract text available
Text: APT10078BFLL APT10078SFLL 1000V POWER MOS 7 R 14A 0.780Ω FREDFET FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10078BFLL
APT10078SFLL
O-264
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Untitled
Abstract: No abstract text available
Text: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive
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4B5545E
0015B44
SMD-220
high10b.
IRL520S
MA55M52
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Untitled
Abstract: No abstract text available
Text: r i 7 SGS-THOMSON ^ 7 # STPS3045CM _ POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS 2x15 A If a v V rrm 45 V Vf 0.57 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES . NEGLIGIBLE SWITCHING LOSSES ■ HIGH AVALANCHE CAPABILITY
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STPS3045CM
PSO-10,
S0-10TM
0E-01
0E-02
0E-05
Tj-1250C
00b043M
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Untitled
Abstract: No abstract text available
Text: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q
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IRFL9014
OT-223
GD2b44cJ
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IRF131ONS
Abstract: ak 957
Text: P D - 91514B Interna tional I ö R Rectifier IRF1310NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF131ONS • Low-profile through-hole (I RF131ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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IRF131ONS)
RF131ONL)
IRF131ONS
ak 957
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Untitled
Abstract: No abstract text available
Text: MÔSSMS5 OOlSbTM Abb International S ii Rectifier PD-9.598A IRFR320 IRFU320 HEXFET Power M O SFET • • • • • • • IINR INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR320 Straight Lead (IRFU320)
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IRFR320
IRFU320
IRFR320)
IRFU320)
50Kii
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Untitled
Abstract: No abstract text available
Text: PD-9.1100B International IO R Rectifier IRF7201 HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Voss = 30V ^D S on
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1100B
IRF7201
Tj-150
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Untitled
Abstract: No abstract text available
Text: International K Rectifier PD 9.1096A IRF7104 PRELIMINARY HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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IRF7104
applicatio50
554S2
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PDF
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Untitled
Abstract: No abstract text available
Text: International |m 1Rectifier PD 9.1100A IRF7201 PRELIMINARY HEXFET® Pow er M O S F E T • • • • • • • Advanced Process Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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IRF7201
02bS1
lfll36iTÃ
GG2b51fl
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IRF7202
Abstract: pj 69 diode pj 57 diode DIODE PJ 57 AN-994 OA 91 diode
Text: International ü ü Rectifier PD 9.1101A IRF7202 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ^DSS = “2 0 V R DS on = 0 .2 5 Ü
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IRF7202
IRF7202
0Q2b523
002b524
pj 69 diode
pj 57 diode
DIODE PJ 57
AN-994
OA 91 diode
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Diode SMD ED 9C
Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are
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I-445
Diode SMD ED 9C
FN240
p-channel 250V 30A power mosfet
P-CHANNEL 400V 15A
i428
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T01-4
Abstract: No abstract text available
Text: National S e m i c on d u c t o r September 1 996 N D T014 N-Channel Enhancement Mode ield Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT014
T01-4
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Untitled
Abstract: No abstract text available
Text: IOR IRFE Series Devices IRFE Series Data Sheet alph abetical order. W h e re the inform ation is device specific, w e have assigned a num eric c h a ra c te r for th e graph typ e and an a lp h a c h a ra c te r to a given d ev ic e . S e e T a b le A b elo w . W h e re graphs are
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irfbc40
Abstract: No abstract text available
Text: IRFBC40, IRFBC42 fÇ j HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 6.2A and 5.4A, 600V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFBC40,
IRFBC42
TA17426.
irfbc40
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6.5S5
Abstract: 5S51 ely transformers I282 A IRFM054 SS452 DD113
Text: Data Sheet No. PD-9.709A INTERNATIONAL RECTIFIER l O R j AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 N-CHANNEL 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.
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IRFM054
IRFM054D
IRFM054U
O-254
MIL-S-19500
I-284
6.5S5
5S51
ely transformers
I282 A
IRFM054
SS452
DD113
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