Untitled
Abstract: No abstract text available
Text: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION
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OD523
SC-79
OD523)
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diode s4
Abstract: smd diode S4 S4 DIODE smd diode j smd diode JS DIODE S4 65 DIODE S4 92 S4 SMD DIODE
Text: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits.
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OD523
SC-79
OD523)
diode s4
smd diode S4
S4 DIODE
smd diode j
smd diode JS
DIODE S4 65
DIODE S4 92
S4 SMD DIODE
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DIODE S4 08
Abstract: smd diode 891 BA891 DIODE S4 65 smd diode S4 S4 DIODE ultra low forward voltage diode diode s4 smd diode nh smd diode JS
Text: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners
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BA891
OD523
SC-79
DIODE S4 08
smd diode 891
DIODE S4 65
smd diode S4
S4 DIODE
ultra low forward voltage diode
diode s4
smd diode nh
smd diode JS
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Untitled
Abstract: No abstract text available
Text: Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits.
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BA891
OD523
SC-79
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70VDC
Abstract: Zowie Technology TS-103 TS103
Text: Zowie Technology Corporation Surface Mount Switching Diode 3 ANODE 1 CATHODE BAV70WG 3 1 2 2 ANODE SOT-323 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 4.5 Adc Symbol Max. Unit Total Power Dissipation, Ts=103 C
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BAV70WG
OT-323
70VDC
Zowie Technology
TS-103
TS103
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SURFACE MOUNT DIODE JS 8
Abstract: MBG381 BAs21 JS power electronic handbook
Text: BAS21 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE Package:SOT-23 Switch diode High Voltage Surface Mount Package Ideally Suited for Automatic Insertion ABSOLUTE MAXIMUM RATINGS at Ta=25℃
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BAS21
OT-23
MBG381
MBG445
BAS21.
BAS20.
BAS19.
MBG447
SURFACE MOUNT DIODE JS 8
MBG381
BAs21 JS
power electronic handbook
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Untitled
Abstract: No abstract text available
Text: March 1998 F A IR C H IL D S E M IC O N D U C T O R tm FDS8947A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell
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FDS8947A
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Untitled
Abstract: No abstract text available
Text: SDC15 ^ “ X L .L E V n October 13, 1998 300W Surface Mount TVS Diode TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SDC15 transient voltage suppressors TVS is designed to protect components which are connected to data and transmission lines from voltage surges
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SDC15
SDC15
OT-23
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KDS 2F
Abstract: smd fl014 KDS DATE CODE SMD rectifier 729
Text: International e Rectifier PD 9.1381 IRFL4105 PRELIMINARY HEXFET® Power MOSFET Surface M ount A dvanced Process Technology Ultra Low O n-R esistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated V DSS = 55V ^DS on - 0.045Q lD = 3.7A Description
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IRFL4105
OT-223
KDS 2F
smd fl014
KDS DATE CODE
SMD rectifier 729
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Untitled
Abstract: No abstract text available
Text: P D -9 1 8 4 8 B International IQR Rectifier IRLMS6802 HEXFET Power M O SFET • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Available in Tape & Reel 1 f, 2 _5 V DSS = -20V °[T 3 4 ZD° ID * ^ D S o n = 0 .0 5 0 0 T o p V ie w
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IRLMS6802
G0333S7
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Untitled
Abstract: No abstract text available
Text: May 1998 F A IR C H IL D iM IC D N D U C T O R ! FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high
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FDS8934A
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TE 2383
Abstract: No abstract text available
Text: Preliminary Data Sheet PD -2.383 rev. A 05/97 International IO R Rectifier H F A 0 8 T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche
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140nC
HFA08TB120
TE 2383
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier P D - 9.1644 IRL1004S/L PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRL1004S Low-profile through-hole (IRL1004L) Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating
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IRL1004S/L
IRL1004S)
IRL1004L)
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BKC Semiconductors
Abstract: No abstract text available
Text: SM D Schottky Diode SOD-123 Plastic Applications Higher Voltage and lower Leakage. Low forward drop. More ESD protection. Efficient portable systems battery isolator. Able to directly replace SMA, SQD-80 or MELF packages on boards without redesign. SOD 123 PACKAGE OUTLINE
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OD-123
SQD-80
BAT46)
BKC Semiconductors
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Untitled
Abstract: No abstract text available
Text: DIXYS Three Phase VU0160 ldAV Rectifier Bridges v RSM v RRM V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 =175 A VRRM = 8 0 0 -1800 V >11 Type r1 1 1 VUO160-08N07 V U 0 160-12N07 V U 0 160-14N07 V U 0 160-16N07 V U 0 160-18N07* Hh 1 •1 1 1 1 1 1 [.
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VU0160
VUO160-08N07
160-12N07
160-14N07
160-16N07
160-18N07*
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9955
Abstract: 9955 a 9955 SO-8
Text: May 1998 F A IR C H IL D EMICDNDUCTORi NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDS9955
9955
9955 a
9955 SO-8
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TDA 6172
Abstract: TDA 7321 TDA 1883
Text: I , .• I International I R Rectifier PRELIMINARY P D 9 .1 3 8 6 IRF5305S HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • Surface Mount • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated
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IRF5305S
4AS5M52
TDA 6172
TDA 7321
TDA 1883
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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IRF2807S)
IRF2807L)
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Untitled
Abstract: No abstract text available
Text: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching
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IRFR2605)
IRFU2605)
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Untitled
Abstract: No abstract text available
Text: PD - 9.1326B International IOR Rectifier IRL2505S PRELIM IN ARY HEXFET Power MOSFET • • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature
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1326B
IRL2505S
4A55452
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Untitled
Abstract: No abstract text available
Text: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PC30UD
O-247AC
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IRFZ44NS
Abstract: No abstract text available
Text: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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IRFZ44NS
4BS5452
IRFZ44NS
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Untitled
Abstract: No abstract text available
Text: OÌXYS Three-Phase VUC 36 Rectifier Bridges with Fast Diodes and "Softstart" Thyristor v RSM v BSM v RRM v DRM V V 1300 1500 1700 1200 1400 1600 "W i1t• VUC 36-12go2 VUC 36-14go2 VUC 36-16go2 ^TAVM T k = 85'C; module module T k = 85‘C; DC Maximum Ratings
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36-12go2
36-14go2
36-16go2
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nfi7
Abstract: marking A95 SC201 SC201-4 SC201-8
Text: S C 2 0 1 o.5A : Outline Drawings FAST RECOVERY DIODE : Features • fm n to v iu k Surface mount device ISfcjv : Marking Cathode Marti High voltage by mesa design, Cod« • ftftfltli High reliability Tv» S C 20I-2 SC201-4 S C 201-8. Cod* a a QB GC : Applications
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SC201
SC20I-2
SC201-4
SC201-8
SC20K0
nfi7
marking A95
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